FAIRCHILD ISL9V3036D3S

ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
General Description
Applications
The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the
next generation IGBTs that offer outstanding SCIS capability in the
space saving D-Pak (TO-252), as well as the industry standard D²Pak (TO-263) and TO-220 plastic packages. These devices are
intended for use in automotive ignition circuits, specifically as a coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D2-Pak package
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49442
Package
Symbol
COLLECTOR
JEDEC TO-252AA
D-Pak
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E
C
G
R1
GATE
G
G
E
R2
E
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
(FLANGE)
Device Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
360
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
300
mJ
ESCIS150
TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
170
mJ
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
21
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
17
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
150
W
Power Dissipation Derating TC > 25°C
1.0
W/°C
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
TJ
TSTG
TL
©2002 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
April 2002
Device Marking
V3036D
Device
ISL9V3036D3S
Package
TO-252AA
Tape Width
16mm
Quantity
2500
V3036S
ISL9V3036S3S
TO-263AB
24mm
800
V3036P
ISL9V3036P3
TO-220AA
-
-
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
330
360
390
V
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
350
380
410
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
Collector to Emitter Leakage Current
VCER = 250V,
RG = 1KΩ,
See Fig. 11
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
±12
±14
-
V
TC = 25°C
-
-
25
µA
TC = 150°C
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
70
-
Ω
10K
-
26K
Ω
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 6A,
VGE = 4V
TC = 25°C,
See Fig. 3
-
1.25
1.60
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.5V
TC = 150°C,
See Fig. 4
-
1.58
1.80
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 15A,
VGE = 4.5V
TC = 150°C
-
1.90
2.20
V
-
17
-
nC
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.0
-
V
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
IC = 10A,
VCE = 12V
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
0.7
4
µs
-
2.1
7
µs
VCE = 300V, RL = 500µH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
4.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 3.0 mH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
300
mJ
TO-252, TO-263, TO-220
-
-
1.0
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
©2002 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
Package Marking and Ordering Information
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
30
RG = 1kΩ, VGE = 5V, Vdd = 14V
25
20
15
TJ = 25°C
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <390V
0
30
RG = 1kΩ, VGE = 5V, Vdd = 14V
25
20
15
TJ = 25°C
10
TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <390V
0
0
25
50
75
100
125
150
175
0
200
2
4
tCLP, TIME IN CLAMP (µS)
VGE = 3.7V
VGE = 4.0V
1.26
1.22
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
1.14
-75
-50
-25
0
25
50
75
100
125
150
1.8
ICE = 10A
1.7
VGE = 3.7V
VGE = 4.0V
1.6
1.5
1.4
VGE = 4.5V
VGE = 5.0V
1.3
VGE = 8.0V
1.2
175
-75
-50
-25
0
TJ, JUNCTION TEMPERATURE (°C)
50
75
100
125
150
175
Figure 4. Collector to Emitter On-State Voltage vs
Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
20
10
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.30
1.18
8
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
ICE = 6A
6
10
5
TJ = - 40°C
25
VGE = 8.0V
VGE = 5.0V
20
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
10
5
TJ = 25°C
0
0
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
©2002 Fairchild Semiconductor Corporation
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage vs
Collector Current
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
Typical Performance Curves (Continued)
VGE = 8.0V
VGE = 5.0V
20
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
15
10
5
TJ = 175°C
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
0
25
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = -40°C
0
0
1.0
2.0
3.0
4.0
1.0
2.0
1.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.0
2.5
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
4.5
Figure 8. Transfer Characteristics
25
2.2
VCE = VGE
VGE = 4.0V
20
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
4.0
3.5
VGE, GATE TO EMITTER VOLTAGE (V)
15
10
5
ICE = 1mA
2.0
1.8
1.6
1.4
1.2
1.0
0
25
50
75
100
125
150
-50
175
-25
0
TC, CASE TEMPERATURE (°C)
25
50
100
75
125
150
175
TJ JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
12
10000
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
Resistive tOFF
10
1000
100
10
VCES = 300V
Inductive tOFF
8
6
4
1
Resistive tON
VCES = 250V
2
0.1
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2002 Fairchild Semiconductor Corporation
175
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
Typical Performance Curves (Continued)
8
1600
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
VGE, GATE TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
FREQUENCY = 1 MHz
1200
CIES
800
CRES
400
COES
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
0
0
5
10
15
20
25
0
4
8
12
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
16
20
24
28
32
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
375
BVCER, BREAKDOWN VOLTAGE (V)
ICER = 10mA
370
365
360
TJ = - 40°C
355
TJ = 25°C
350
345
TJ = 175°C
340
335
10
100
1K
10K
RG, SERIES GATE RESISTANCE (Ω)
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
0.1
-1
10
t1
0.05
PD
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2002 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
Typical Performance Curves (Continued)
L
VCE
R
or
L
C
PULSE
GEN
LOAD
C
RG
RG = 1KΩ
DUT
G
+
DUT
G
VCE
-
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
BVCES
VCE
tP
VCE
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
-
VGE
DUT
tP
0V
IAS
0
0.01Ω
tAV
Figure 19. Unclamped Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
Figure 20. Unclamped Energy Waveforms
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
Test Circuit and Waveforms
th
JUNCTION
REV 24 April 2002
ISL9V3036D3S/ ISL9V3036S3S / ISL9V3036P3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
RTHERM1
CTHERM1
6
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6
RTHERM3
CTHERM3
4
RTHERM4
CTHERM4
3
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
RTHERM5
CTHERM5
2
CTHERM6
RTHERM6
tl
©2002 Fairchild Semiconductor Corporation
CASE
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
SPICE Thermal Model
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST â
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC â
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench â
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER â UHC™
SMART START™
UltraFET â
SPM™
VCX™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5