HS2N60IA N channel 600V MOSFET 1. Description The HS2N60IA N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Feature ● RDS(ON)≦4.4Ω@VGS=10V ● Low gate charge ( typical 9.0nC) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability VDS 600 V RDS(on) 4.4 Ω ID 2 A 3. Pin configuration Order Number Package HS2N60IA TO-251 Oct,2012-Ver1.0 1/5 HS2N60IA N channel 600V MOSFET 4. Absolute maximum ratings (T C=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V 2 A 1.5 A 8 A Tc=25℃ Continuous Drain Current ID TC=70℃ Pulsed Drain Current IDM 35 TC=25℃ Power Dissipation PD Derate above 25°C Operating Junction and Storage Temperature Range W 0.28 TJ, Tstg -55~+150 ℃ Symbol Ratings Units Thermal resistance, case to sink typ. RthCS 0.5 °C/W Thermal resistance junction to case. RthJC 3 °C/W Thermal resistance junction to ambient. RthJA 110 °C/W 5. Thermal characteristics Parameter Oct,2012-Ver1.0 2/5 HS2N60IA N channel 600V MOSFET 6. Electrical characteristics (T A =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max Unit 600 -- -- V STATIC BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 2 -- 4 V IGSS Gate-Body Leakage VDS=0V, VGS=±30V -- -- ±100 nA IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V -- -- 1 μA VGS=10V, ID=1A -- -- 4.4 Ω IS=2A, VGS=0V -- -- 1.4 V -- 9 -- -- 1.5 -- RDS(ON) Drain-Source On-Resistance VSD Diode Forward Voltage DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge -- 4.2 -- Ciss Input Capacitance -- 280 -- Coss Output Capacitance -- 40 -- Crss Reverse Transfer Capacitance -- 5 -- td(on) Turn-On Delay Time -- 10 -- tr Turn-On Rise Time -- 25 -- td(off) Turn-Off Delay Time -- 20 -- tf Turn-Off Fall Time -- 25 -- ISD Continuous drain-source current -- -- 2 A ISM Pulsed drain-source current -- -- 8 A VDD=480V, VGS=10V, ID=2A VDS=25V, VGS=0V, f=1MHz VDD=30V, RG=25Ω,ID=2A nC pF ns Notes :a. pulse test:pulse width 300 us,duty cycle 2% ,Guaranteed by design,not subject to production testing. b. HOMSEMI reserves the right to improve product design,functions and reliability without notice. Oct,2012-Ver1.0 3/5 HS2N60IA N channel 600V MOSFET 7. Typical Characteristics (TJ =25℃ Noted) Transfer Characteristics Drain Current,ID(A) Drain Current,ID(A) On-Region Characteristics On-Resistance Variation vs.Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs.Source Current and Temperature Reverse Drain Current,IDR(A) Gate-Source Voltage,VGS(V) Source-Drain Voltage,VSD(V) Capacitance Characteristics Gate Charge vs.Gate-to-Source Voltage Gate-Source Voltage,VGS(V) Drain Current,ID(A) Capacitance(pF) Drain-Source On-Resistance,RDS(on)(Ω) Drain-Source Voltage,VDS(V) Drain Source Voltage V (V) Oct,2012-Ver1.0 Total Gate Charge,QG(nC) 4/5 HS2N60IA N channel 600V MOSFET 8.Package Information： Unit：mm TO-251 Oct,2012-Ver1.0 5/5