HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty 1025-1150 MHz, 10µs Pulse, Duty HVV1012-100L-Band PRODUCT OVERVIEW Avionics Pulsed Power1% Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty TM L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μsPACKAGE Pulse, 1% Duty PACKAGE for DME and TCAS Applications DESCRIPTION DESCRIPTION DESCRIPTION The high power HVV1012-100 device is a high voltage silicon enhancement mode transistor The high power HVV1012-100 device is aRFhigh DESCRIPTION DESCRIPTION • • 48V Supply Voltage • • High Power Gain Excellent Ruggedness y The device resides in a two-lead metal flanged package with crystal polymer lid. The The device resides in liquid a two-lead metal flanged The device resides in astyle two-lead metal NI-400 package is qualified for gross The device resides in acrystal two-lead metal flanged package package with liquid polymer lid. flanged The package with liquid crystal polymer lid. The leak test – MIL-STD-750D, Method 1071.6, The device resides in a two-lead metal flanged with liquidpackage crystal polymer lid.qualified The HV400forpackage NI-400 style is gross style is NI-400 style is qualified for gross Test–package Condition C. package with liquid crystal polymer The 1014. leak test MIL-STD-750D, Method lid. 1071.6, qualified for gross leak test – MIL-STD-883, Method leak test – C.MIL-STD-750D, Method NI-400 package style is qualified for 1071.6, gross Test Condition Test Condition C. leak test – MIL-STD-750D, Method 1071.6, RUGGEDNESS Test Condition C. in •48V Power Gain ••High Excellent Ruggedness High Power Gain Supply Voltage ••Excellent 48V Supply Voltage • Ruggedness Excellent ABSOLUTE Ruggedness MAXIMUM RATINGS •48V 48V Supply Voltage • Supply Voltage ABSOLUTE MAXIMUM RATINGS ar MHz to 1150 MHz. the frequency range from 1025MHz to 1150MHz. FEATURES FEATURES • High Power Gain • Power Excellent Features • FEATURES High GainRuggedness ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ABSOLUTE MAXIMUM RATINGS VDSS Drain-Source Voltage 105Unit ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value m Unit V Parameter VGSDrain-Source Gate-Source Voltage 10 V UnitV VDSS Symbol Voltage 105Value VSymbol Drain-Source Voltage 105 V A Parameter Value DSS IDSXGate-Source Drain Current 8 V Unit VGS Voltage 10 95 VVGS Gate-Source Voltage 10 Drain-Source Voltage 105 V DSS P Power Dissipation 1250 W D Drain Current IDSX 8 A IV Drain Current 8 A Gate-Source Voltage 10 V DSX GS T Storage Temperature -65 to °C S Power Dissipation PD 1250 W PIDDSX Power Dissipation 1250 W Drain Current 8 A TS Storage Temperature -65 to +200 °C 2 Power Dissipation 1250 W TPSDTJ Storage Temperature -65 to °C Junction °C +200 200 TS Storage Temperature +200 -65 to °C Temperature TJ Junction 200 °C +200 TJ Junction 200 °C Temperature TJ Junction 200 °C Temperature Temperature THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS Symbol Parameter Max THERMAL CHARACTERISTICS 1 LJ Thermal Resistance 0.14 eli Theinnovative innovative Semiconductor Company! Semiconductor Company! The The innovative Semiconductor Company! designed for L-Band pulsed radar The high power HVV1012-100 isapplications a high voltage silicon enhancement mode device RF transistor operating over the frequency range from 1025 voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications The high power HVV1012-100 device is a high The high HVV1012-100 device isapplications a high MHz topower 1150 MHz. designed for pulsed radar RF operating over theL-Band frequency range 1025voltage voltage silicon enhancement modefrom transistor operating over the frequency rangeapplications from 1025 for enhancement mode RF transistor designed MHzsilicon to 1150 MHz. designed for L-Band pulsed radar MHz to 1150 MHz. L-Band pulsed avionics applications operating over the frequency range operating from 1025over FEATURES PACKAGE PACKAGE PACKAGE Unit °C/W JC Parameter Symbol Max Unit Symbol Parameter Max Unit 1 LJJC1 LJSymbol Thermal Resistance 0.14 °C/W Parameter Max Unit Thermal Resistance 0.14 °C/W JC LJJC1 Thermal Resistance 0.14 °C/W RUGGEDNESS RUGGEDNESS RUGGEDNESS The HVV1012-100 RUGGEDNESS withstanding an device is capable of output mismatch The devicedevice is capable ofload withstanding an TheHVV1012-100 HVV1012-100 is capable of The corresponding HVV1012-100to adevice is capable of 20:1 VSWR at rated output output load mismatch corresponding to a 20:1 VSWR at withstanding an output load mismatch The HVV1012-100 device is of withstanding an operating output loadcapable mismatch power and voltage across the corresponding to a 20:1 VSWR at rated output ratedwithstanding output poweran and operating voltage across the freoutput load mismatch corresponding to a 20:1 VSWR at rated output frequency band of operation. power and of operating voltage across the quency band operation. corresponding to a 20:1 VSWR at rated output power and operating voltage across the Symbol Parameter Test Condition Max Units frequency band of operation. power and Load operating voltage across the 1 frequency band operation. LMT POUTof= 100W 20:1 Symbol Parameter Test Condition Max Units VSWR frequency band of Symbol Parameter Max Units MismatchTest Condition operation. 1 LMT Load POUT = 100W 20:1 VSWR F 100W = 1150 MHz Symbol Parameter Test Max LMT1 LoadTolerance POUTCondition = 20:1 Units VSWR Mismatch 1 LMT Load POUT = 100W 20:1 VSWR Mismatch F = 1150 MHz F = 1150 MHz Tolerance Mismatch Tolerance F = 1150 MHz Tolerance ELECTRICAL CHARACTERISTICS CHARACTERISTICS ELECTRICAL ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Parameter Pr Conditions Typ Units 3mA 102 V Drain-Source Breakdown VGS=0V,ID=1mA 110 V BR(DSS) Symbol Conditions Typ Units Symbol Parameter Parameter Conditions Typ Units <80 IDSS Drain Leakage Current VGS=0V,ID=1mA VGS=0V,VDS=48V <10V Units µA Parameter Conditions Typ VBR(DSS) Drain-Source Breakdown 110 VSymbol Drain-Source Breakdown VGS=0V,ID=1mA 110 V BR(DSS) IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA Drain-Source Breakdown VGS=0V,ID=1mA 110 VµA µA BR(DSS) IDSS IV Drain Leakage Current VGS=0V,VDS=48V <10 Drain Leakage Current VGS=0V,VDS=48V <10 DSS 1 GP Power Gain P =100W,F=1025,1150MHz 20.5 Drain Leakage Current VGS=0V,VDS=48V <10 µA OUT DSS IGSS IIGSS GateGate Leakage Current VGS=5V,VDS=0V <1 µA Leakage Current VGS=5V,VDS=0V <1 µA dB 1 Gate Leakage Current VGS=5V,VDS=0V <1 µA Input Return Loss P=100W,F=1025,1150MHz 11 dB dB 1IRL OUT=100W,F=1025,1150MHz 20.5 GP1 GIPGSS Power Gain P =100W,F=1025,1150MHz Power Gain P 20.5 dB OUT OUT 1 1 GPdž1 1 Power Gain P =100W,F=1025,1150MHz 20.5 dB Drain Efficiency P =100W,F=1025,1150MHz 50 OUT OUT IRL IRL D1 Input Return LossLoss POUTP=100W,F=1025,1150MHz 11 11 dBdB % Input Return OUT=100W,F=1025,1150MHz 1 1 IRL Input Return Loss P =100W,F=1025,1150MHz 11 1 PD Pulse Droop P =100W,F=1025,1150MHz <0.3 OUT OUT džD džD 1 Drain Efficiency POUTP=100W,F=1025,1150MHz 50 50 %dB Drain Efficiency % dB OUT=100W,F=1025,1150MHz Drain Efficiency P =100W,F=1025,1150MHz 50 % 1 džD1 OUT PD PD 1 Pulse Droop POUTP=100W,F=1025,1150MHz <0.3 dBdB Pulse Droop <0.3 OUT=100W,F=1025,1150MHz Pulse Droop =100W,F=1025,1150MHz dBIDQ = 50mA OUTµsec, 1.) Under Pulse Conditions: Pulse Width = P 10 Pulse Duty Cycle = 1% at <0.3 VDD = 48V, 1 PD Under Pulse Conditions: Pulse Width = 10µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA 1.) Under Pulse Conditions: Pulse Width = 10 Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA Conditions: Pulse Width = µsec, 10 µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA 21.) Under Rated at TPulse = 25° 1.) Under Pulse Conditions: Pulse Width = 10 µsec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 50mA CASE HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. Suite 100 10235 S. 51st St.Inc. Semiconductors, Inc. HVViHVVi Semiconductors, HVVi Semiconductors, Inc. st S.st51st 10235 St. Suite 100 Phoenix, Az. 85044 stSt. Suite 10235 51 100 100 10235 S. 51S.S.St. St. Suite 100 10235 51Suite Phoenix, AZ. 85044 Phoenix, Az. Phoenix, Az. 85044 Phoenix, Az.85044 85044 For additional information, visit: www.hvvi.com For additional information: HVVi Semiconductors, Inc. Confidential additional information, visit: www.hvvi.com For For additional information, visit: www.hvvi.com For(866) additional information, visit: www.hvvi.com Tel: 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. HVVi Semiconductors, Inc. Confidential HVVi Semiconductors, Inc.Inc. Confidential HVVi Semiconductors, Confidential © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. © 2008 HVVi Semiconductors, Inc.Inc. AllAll Rights Reserved. © 2008 HVVi Semiconductors, Rights Reserved. EG-01-PO04X2 EG-01-PO04X5 06/10/08 EG-01-PO04X2 EG-01-PO04X2 EG-01-PO04X2 10/13/08 06/10/08 1 06/10/08 06/10/08 11 11 The innovative Semiconductor Company! HVV1012-100 PRODUCT OVERVIEW TM L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications PACKAGE DIMENSIONS Drain GATE SOURCE Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO04X5 10/13/08 2