Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amp Technical Data IAM-81008 Features • RF-IF Conversion Gain From 0.05– 5 GHz • IF Conversion Gain From DC to 1 GHz • Low Power Dissipation: 65 mW at VCC = 5 V Typical • Single Polarity Bias Supply: VCC = 4 to 8 V • Load-insensitive Performance • Conversion Gain Flat Over Temperature • Low LO Power Requirements: –5 dBm Typical • Low Cost Plastic Surface Mount Package Description The IAM-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation at RF and LO frequencies less than 50 MHz can be achieved using optional external capacitors to ground. The IAM-81008 is particularly well suited for applications that require load-insensitive conversion and good spurious signal suppression with minimum LO and bias power consumption. Typical applications include frequency down conversion, modulation, demodulation and phase detection. Markets include fiber-optics, GPS satelite navigation, mobile radio, and battery powered communications receivers. The IAM series of Gilbert multiplierbased frequency converters is fabricated using HP’s 10 GHz, f T, 25 GHz fMAX ISOSAT™-I silicon bipolar process. This process uses nitride self alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Plastic SO-8 Package Pin Configuration 1 8 2 7 3 6 4 5 Typical Biasing Configuration and Functional Block Diagram Cblock IF Output Vee = 0 V RF Input 1 Cblock 8 2 7 3 6 4 5 Cblock Optional Low Frequencies RF Ground VCC = 5 V Optional Low LO Ground Cblock LO Input Note: No external baluns are required. 2 IAM-81008 Absolute Maximum Ratings Thermal Resistance: θjc = 80°C/W Absolute Maximum[1] Parameter Device Voltage Power Dissipation2,3 RF Input Power LO Input Power Junction Temperature Storage Temperature 10 V 300 mW +14 dBm +14 dBm 150°C –65 to 150°C Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 4.4 mW/°C for TC > 82°C. IAM-81008 Part Number Ordering Information Part Number Devices Per Reel Reel Size IAM-81008-TR1 1000 7" For more information, see “Tape and Reel Packaging for Semmiconductor Devices”. IAM-81008 Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Vcc = 5 V, ZO = 50 Ω, LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max. dB 6.0 8.5 10 GC Conversion Gain RF = 2 GHz, LO = 1.75 GHz F3 dBRF RF Bandwidth (GC 3 dB Down) IF = 250 MHz GHz 3.5 F3 dB IF IF Bandwidth (GC 3 dB Down) LO = 2 GHz GHz 0.6 P1 dB IF Output Power at 1 dB Gain Compression RF = 2 GHz, LO = 1.75 GHz dBm –6 IP3 IF Output Third Order Intercept Point RF = 2 GHz, LO = 1.75 GHz dBm 3 SSB Noise Figure RF = 2 GHz, LO = 1.75 GHz dB RF Port VSWR f = 0.05 to 3.5 GHz NF VSWR 17 1.5:1 LO Port VSWR f = 0.05 to 3.5 GHz 2.0:1 IF Port VSWR f < 1 GHz 1.5:1 RFif RF Feedthrough at IF Port RF = 2 GHz, LO = 1.75 GHz dBc –25 LOif LO Leakage at IF Port LO = 1.75 GHz dBm –25 LOrf LO Leakage at RF Port LO = 1.75 GHz dBm ICC Supply Current mA –30 10 13 16 Note: 1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on the following page. 3 IAM-81008 Typical Performance, TA = 25°C, VCC = 5 V RF: –20 dBm at 2 GHz, LO: –5 dBm at 1.75 GHz (unless otherwise noted) 5 10 0 30 15 5 20 10 0 20 GC GC (dB) GC 10 –5 5 IF P1 dB (dBm) 5 ICC (mA) GC (dB) IF P1 dB (dBm) ICC 15 ICC (mA) 15 ICC 10 –5 P1 dB P1 dB 0 –10 0 2 4 6 0 10 8 0 –10 –55 –25 VCC (V) +25 TEMPERATURE (°C) Figure 1. Conversion Gain, IF P1 dB and ICC Current vs. VCC Bias Voltage. Figure 2. Conversion Gain, IF P1 dB and ICC Current vs. Case Temperature. 4:1 10 10 RF LO IF IF = 70 MHz 5 8 GC (dB) VSWR GC (dB) 3:1 0 0.2 0.5 1.0 2.0 5.0 1:1 0.1 10 1.0 RF FREQUENCY (GHz) –10 –5 0 5 LO POWER (dBm) Figure 4. RF, LO and IF Port VSWR vs. Frequency. 10 Figure 5. RF to IF Conversion Gain vs. LO Power. 0 RF to IF RF to IF (dBc) LO to RF and IF (dBm) 8 6 4 2 –10 LO to IF LO to RF HARMONIC LO ORDER LO = 2 GHz GC (dB) 0 –15 10 FREQUENCY (GHz) Figure 3. Typical RF to IF Conversion Gain vs. RF Frequency, TA = 25°C (Low Side LO). –2 0.01 4 2 –5 0 6 2:1 IF = 1 GHz 0.1 5 +125 +85 –20 –30 High Side LO Low Side LO 0.1 1.0 2.0 FREQUENCY, RF–LO (GHz) Figure 6. RF to IF Conversion Gain vs. IF Frequency. –40 0.1 1.0 10 FREQUENCY (GHz) Figure 7. RF Feedthrough Relative to IF Carrier, dBm LO to RF and IF Leakage vs. Frequency. 0 — 21 35 74 >75 >75 1 18 0 45 48 >75 >75 2 16 35 42 72 >75 >75 3 42 20 44 59 >75 >75 4 29 44 52 64 >75 >75 5 45 36 57 64 >75 >75 0 1 2 3 4 5 HARMONIC RF ORDER Xmn = Pif – P(m*rf – n*lo) Figure 8. Harmonic Intermodulation Suppression (dB Below Desired Output) RF at 1 GHz, LO at 0.752 GHz, IF at 0.248 GHz. Package Dimensions SO-8 Plastic Package 1.27 (.050) 6x 3.80/4.00 (.1497/.1574) M810 5.84/6.20 (.230/.244) 0.38 ± 0.10 (.015 ± .004) x 45° Pin 1 1.35/1.75 (.0532/.0688) 4.72/5.00 (.186/.197) 0°/8° 0.10 (.004) 0.33/0.51 (.013/.020) 8X 0.19/0.25 (.0075/.0098) 0.10/0.25 (.004/.0098) Note: 1. Dimensions are shown in millimeters (inches). 0.41/1.27 (.016/.050) www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright © 1998 Hewlett-Packard Co. Obsoletes 5965-9107E Printed in U.S.A. 5966-4982E (4/98)