IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Optocoupler, Photodarlington Output (Single, Dual, Quad Channel) Single Channel Features • • • • • • • • 125 mA Load Current Rating Fast Rise Time, 10 µs Fast Fall Time, 35 µs Single, Dual and Quad Channel Solid State Reliability Standard DIP Packages Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 B C 2 5 C NC 3 4 E A 1 8 E C 2 7 C C 3 6 C A 4 5 E Dual Channel Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 • BSI IEC60950 IEC60065 • FIMKO Description The IL30/ IL31/ IL55 single, ILD30/ ILD31/ ILD55 dual, and ILQ30/ ILQ31/ ILQ55 quad are optically coupled isolators with Gallium Arsenide infrared emit- Quad Channel A 1 16 E C 2 15 C C 3 14 C A 4 13 E 12 E A 5 C 6 11 C C 7 10 C A 8 9 E i179011 e3 Pb Pb-free ters and silicon photodarlington sensors. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. The IL30/ IL31/ IL55 are equivalent to MCA230/ MCA231/ MCA255. The ILD30/ ILD31/ ILD55 are designed to reduce board space requirements in high density applications. Document Number 83621 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Order Information Part Remarks IL30 CTR > 100 %, Single Channel DIP-6 IL31 CTR > 200 %, Single Channel DIP-6 IL55 CTR > 100 %, Single Channel DIP-6 ILD30 CTR > 100 %, Dual Channel DIP-8 ILD31 CTR > 200 %, Dual Channel DIP-8 ILD55 CTR > 100 %, Dual Channel DIP-8 ILQ30 CTR > 100 %, Quad Channel DIP-16 ILQ31 CTR > 200 %, Quad Channel DIP-16 ILQ55 CTR > 100 %, Quad Channel DIP-16 IL55-X009 CTR > 100 %, Single Channel SMD-6 (option 9) ILD30-X009 CTR > 100 %, Dual Channel SMD-8 (option 9) ILD31-X007 CTR > 200 %, Dual Channel SMD-8 (option 7) ILD31-X009 CTR > 200 %, Dual Channel SMD-8 (option 9) ILD55-X007 CTR > 100 %, Dual Channel SMD-8 (option 7) ILD55-X009 CTR > 100 %, Dual Channel SMD-8 (option 9) ILQ30-X009 CTR > 100 %, Quad Channel SMD-16 (option 9) ILQ55-X007 CTR > 100 %, Quad Channel SMD-16 (option 7) ILQ55-X009 CTR > 100 %, Quad Channel SMD-16 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input (each channel) Parameter Test condition Peak reverse voltage Forward continuous current Power dissipation Symbol Value VRM 3.0 V IF 60 mA Pdiss Derate linearly from 25 °C Unit 100 mW 1.33 mW/°C Output Parameter Collector-emitter breakdown voltage www.vishay.com 2 Test condition Part Symbol Value Unit IL30 BVCEO 30 V ILD30 BVCEO 30 V ILQ30 BVCEO 30 V IL55 BVCEO 55 V ILD55 BVCEO 55 V ILD55 BVCEO 55 V Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Parameter Test condition Part Symbol Value IC 125 mA Pdiss 150 mW 2.0 mW/°C Collector (load) current Power dissipation Derate linearly from 25 °C Unit Coupler Parameter Test condition Total package power dissipation Part Symbol Value Unit IL30 Ptot 250 mW IL31 Ptot 250 mW IL55 Ptot 250 mW ILD30 Ptot 400 mW ILD31 Ptot 400 mW ILD55 Ptot 400 mW ILQ30 Ptot 500 mW ILQ31 Ptot 500 mW ILQ55 Ptot 500 mW IL30 3.3 mW/°C IL31 3.3 mW/°C IL55 3.3 mW/°C ILD30 5.33 mW/°C ILD31 5.33 mW/°C ILD55 5.33 mW/°C ILQ30 6.67 mW/°C ILQ31 6.67 mW/°C ILQ55 6.67 mW/°C 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking index 175 Derate linearly from 25 °C Isolation test voltage VISO Storage temperature Tstg - 55 to + 125 Operating temperature Tamb - 55 to + 100 °C 10 sec. Lead soldering time at 260 °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input GaAs emitter (per channel) Parameter Test condition Typ. Max Unit VF 1.25 1.5 V VR = 3.0 V IR 0.1 10 µA VR = 0 V CO 25 Forward voltage IF = 20 mA Reverse current Capacitance Document Number 83621 Rev. 1.5, 26-Oct-04 Symbol Min pF www.vishay.com 3 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Output per channel Parameter Test condition Symbol Min BVCEO 30/55 Typ. Collector-emitter breakdown voltage IC = 100 µA Collector-emitter leakage current VCE = 10 V, IF = 0 ICEO 1.0 Collector-emitter capacitance VCE = 10 V, f = 1.0 MHz CCE 3.4 Max Unit V 100 nA pF Coupler Parameter Collector-emitter saturation voltage Test condition Symbol IC = 50 mA, IF = 50 mA VCEsat Isolation test voltage Min Typ. Max Unit 0.9 1.0 V 5300 Isolation resistance RIO Capacitance (input-output) CIO VRMS 10 Ω 12 0.5 pF Current Transfer Ratio Parameter Current Transfer Ratio www.vishay.com 4 Test condition IF = 10 mA, VCE = 5.0 V Part Symbol Min Typ. IL30 CTR 100 400 Max Unit % IL55 CTR 100 400 % ILD30 CTR 100 400 % ILD55 CTR 100 400 % ILQ30 CTR 100 400 % ILQ55 CTR 100 400 % IL31 CTR 200 400 % ILD31 CTR 200 400 % ILQ31 CTR 200 400 % Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Rise time VCC = 13.5 V, IF = 50 mA, RL = 100 Ω tr 10 µs Fall time VCC = 13.5 V, IF = 50 mA, RL = 100 Ω tf 35 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10 1. 3 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 85°C 0.8 .1 Vce = 5 V IF = 10 mA 1 1 10 IF - Forward Current - mA Vce = 1V .01 .001 .1 100 iil30_01 Vce = 5 V .1 0.7 10 1 IF - LED Current - mA 100 iil30_03 Figure 1. Forward Voltage vs. Forward Current 10 Normalized to: 1.0 Vce = 5 V 0.8 IF = 10 mA Normalized to: Vce = 5 V 0.6 0.4 0.2 Vce =1V 0.0 .1 Figure 3. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current 1 10 100 Vcb = 3.5 V NIcb - Normalized Icb 1.2 NCTRce - Normalized CTRce Normalized to: Ta = –55°C NIce - Normalized Ice VF - Forward Voltage - V 1.4 1 .1 .01 1000 .001 IF - LED Current - mA iil30_02 Figure 2. Normalized Non-Saturated and Saturated CTRCE vs. LED Current Document Number 83621 Rev. 1.5, 26-Oct-04 IF = 10 mA .1 1 10 IF - LED Current - mA 100 iil30_04 Figure 4. Normalized Collector-Base Photocurrent vs. LED Current www.vishay.com 5 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors 12000 Hfe - Current Gain VCE=5 V 10000 IF 8000 VCE=1 V 6000 4000 VO 2000 0 .01 .1 1 Base Current 10 tD tR tPLH VTH=1.5 V 100 tS tPHL iil30_05 tF iil30_08 Figure 5. HFE Current Gain vs. Base Current Figure 8. Switching Waveform tpLH - Low/High Propagation Delay - µS 80 Vcc = 5V Vth = 1.5 V 1.0 kΩ V CC =13.5 V 60 F=10 KHz, DF=50% 220 ıˇ Ω 40 RL VO 470 Ω 20 IF =50 mA 100 Ω 0 0 5 10 15 20 IF - LED Current - mA iil30_06 iil30_09 Figure 6. Low to High Propagation Delay vs. Collector Load Resistance and LED Current Figure 9. Switching Schematic tpHL - High/Low Propagation delay - µs 20 1kΩ Vcc = 5 V 15 Vth = 1.5 V 10 100Ω 5 0 0 5 10 15 20 IF - LED Current - mA iil30_07 Figure 7. High to low Propagation Delay vs. Collector Load Resistance and LED Current www.vishay.com 6 Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18° 4° typ. .031 (0.80) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .031 (0.79) .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 Document Number 83621 Rev. 1.5, 26-Oct-04 10° .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3°–9° .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) www.vishay.com 7 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4° .020(.51) .035 (.89) .018 (.46) .022 (.56) .100 (2.54)typ. .050 (1.27) 10° typ. 3°–9° .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) i178007 Option 7 Option 9 .375 (9.53) .395 (10.03) .300 (7.62) TYP. .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 8 .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18494 Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83621 Rev. 1.5, 26-Oct-04 www.vishay.com 9