IPD04N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Logic Level RDS(on) 4.2 mΩ • Low On-Resistance RDS(on) ID 100 A • Excellent Gate Charge x RDS(on) product (FOM) P-TO252-5-1 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter Drain pin 3,6 1) Type Package Ordering Code Marking Gate pin 1 IPD04N03L P-TO252-5-1 Q67042-S4127 04N03L n.c.: pin 2 Source pin 4,5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current2) ID Value Unit A 100 TC=100°C 100 I D puls 400 EAS 60 Repetitive avalanche energy, limited by Tjmax3) EAR 15 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 150 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=55A, VDD=25V, RGS=25Ω kV/µs IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-01-17 IPD04N03L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 0.7 1 @ min. footprint - - 75 @ 6 cm2 cooling area 4) - - 50 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, I D=1mA Gate threshold voltage, VGS = VDS ID=100µA Zero gate voltage drain current µA I DSS V DS=30V, V GS=0V, Tj=25°C - 0.01 1 V DS=30V, V GS=0V, Tj=125°C - 10 100 I GSS - 1 100 nA RDS(on) - 5 6.3 mΩ RDS(on) - 3.4 4.2 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5, ID =50A Drain-source on-state resistance V GS=10V, ID=50A 1pin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5. 2Current limited by bondwire ; with an R = 1K/W the chip is able to carry I = 145A at 25°C, for detailed thJC D information see app.-note ANPS071E available at www.infineon.com/optimos 3Defined by design. Not subject to production test. 4Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD04N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 59 118 - Dynamic Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, S ID=100A Input capacitance Ciss V GS=0V, V DS=25V, - 2500 3320 pF Output capacitance Coss f=1MHz - 980 1300 Reverse transfer capacitance Crss - 230 350 Turn-on delay time t d(on) V DD=15V, VGS=10V, - 11 16.5 ns Rise time tr ID=25A, - 17 26 Turn-off delay time t d(off) RG=2.7Ω - 44 66 Fall time tf - 20.2 30.3 - 8.9 11.8 nC - 22.1 33.2 - 39 47 - 35 44 V(plateau) V DD=15V, ID=50A - 3.3 - V IS - - 100 A - - 400 Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=15V, ID=50A V DD=15V, ID=50A, V GS=0 to 5V Output charge Q oss V DS=15V, ID=50A, nC V GS=0V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, I F=80A - 0.9 1.3 V Reverse recovery time trr VR =15V, IF=lS, - 46 58 ns Reverse recovery charge Qrr diF /dt=100A/µs - 56 69 nC Page 3 2003-01-17 IPD04N03L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: V GS≥ 10 V IPD04N03L IPD04N03L 160 110 A W 90 80 ID P tot 120 100 70 60 80 50 60 40 30 40 20 20 10 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( V DS ) ZthJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 10 1 3 IPD04N03L IPD04N03L K/W tp = 8.5µs 10 µs /I D A ZthJC R ID 10 2 DS (on ) = V DS 10 0 100 µs 10 -1 D = 0.50 10 1 ms 10 -2 0.20 1 0.10 10 ms 0.05 DC 0.02 10 -3 0.01 single pulse 10 0 -1 10 10 0 10 1 V 10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2003-01-17 IPD04N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS 240 IPD04N03L Ptot = 150W IPD04N03L 14 mΩ A c hg f VGS [V] a 2.5 200 ID 180 e 160 140 120 d b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 10.0 d e 12 11 RDS(on) i 10 9 8 7 6 100 f 5 80 h i 4 60 c 3 40 2 VGS [V] = 20 0 0 g 1 b a 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 c 3.5 d 4.0 20 e f 4.5 5.0 40 60 g 5.5 h i 6.0 10.0 80 100 120 140 160 A VDS 200 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C parameter: tp = 20 µs parameter: gfs 180 130 S A 110 100 90 120 gfs ID 140 80 100 70 80 60 50 60 40 30 40 20 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VGS Page 5 0 0 20 40 60 80 100 120 A ID 160 2003-01-17 IPD04N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 50 A, VGS = 10 V parameter: V GS = VDS IPD04N03L 2.35 11 mΩ V 1.95 V GS(th) RDS(on) 9 8 7 ID=6.4mA 1.75 1.55 6 1.35 ID =110µA 98% 5 1.15 4 typ 0.95 3 0.75 2 0.55 1 0 -60 -20 20 60 100 °C 140 0.35 -60 200 -20 20 60 100 180 °C Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 IPD04N03L A pF Ciss IF C 10 2 Coss 10 3 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 30 V VDS 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-01-17 IPD04N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj ) par.: ID = 55 A, VDD = 25 V, RGS = 25 Ω parameter: ID=10 mA IPD04N03L 36 60 mJ V V(BR)DSS 50 EAS 45 40 35 34 33 32 30 31 25 30 20 15 29 10 28 5 0 25 45 65 85 105 125 145 °C Tj 185 80 nC 100 27 -60 -20 20 60 100 140 °C 200 Tj 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 50 A pulsed IPD04N03L 16 V VGS 12 10 0.2 VDS max 8 6 0.5 VDS max 0.8 VDS max 4 2 0 0 10 20 30 40 50 60 70 Q Gate Page 7 2003-01-17 IPD04N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-01-17