IRF IRF7809AV

PD-90010
IRF7809AV
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7809AV offers particulary low RDS(on) and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
T o p V ie w
SO-8
DEVICE CHARACTERISTICS…
IRF7809AV
RDS(on)
7.0mΩ
QG
41nC
Qsw
14nC
Qoss
30nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 90°C
Pulsed Drain Current
Power Dissipation
Symbol
IRF7809A V
VDS
30
VGS
±12
ID
13.3
14.6
IDM
TA = 25°C
PD
TL = 90°C
Units
V
A
100
2.5
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
2.5
A
Pulsed Source Current
ISM
50
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
50
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
10/26/00
IRF7809AV
Electrical Characteristics
Parameter
Min
Typ
Max
Units
30
–
–
V
7.0
9.0
mΩ
VGS = 4.5V, ID = 15A‚
V
VDS = VGS,ID = 250µA
150
µA
VDS = 24V, VGS = 0,
±100
nA
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Gate-Source Leakage
Current*
IGSS
Total Gate Chg Cont FET
QG
41
62
Total Gate Chg Sync FET
QG
36
54
Pre-Vth
Gate-Source Charge
QGS1
7.0
Post-Vth
Gate-Source Charge
QGS2
2.3
Gate to Drain Charge
QGD
12
1.0
30
Current*
Conditions
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0
Tj = 100°C
VGS=5V, ID=15A, VDS=20V
VGS = 5V, VDS< 100mV
VDS = 20V, ID = 15A
nC
ID=15A, VDS=16V
Switch Chg(Qgs2 + Qgd)
Qsw
14
21
Output Charge*
Qoss
30
45
Gate Resistance
RG
1.5
Turn-on Delay Time
td (on)
14
Rise Time
tr
36
Turn-off Delay Time
td
96
Fall Time
tf
Input Capacitance
Ciss
–
3780
–
Output Capacitance
Coss
–
1060
–
Reverse Transfer Capacitance Crss
–
130
–
Typ
Max
Units
1.3
V
(off)
VGS = ±12V
VDS = 16V, VGS = 0
Ω
VDD = 16V, ID = 15A
ns
VGS = 5V
Clamped Inductive Load
10
pF
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
Notes:
2

‚
ƒ
„
…
120
nC
Conditions
IS = 15A‚, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
150
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values measured at VGS = 4.5V, IF = 15A.
www.irf.com
IRF7809AV
1000
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
TOP
100
100
2.5V
20µs PULSE WIDTH
TJ = 25 ° C
10
0.1
1
10
100
2.5V
10
0.1
VDS , Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
2.6
2.8
3.0
3.2
Fig 3. Typical Transfer Characteristics
www.irf.com
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
2.4
20µs PULSE WIDTH
TJ = 150 ° C
3.4
ID = 15A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7809AV
6000
4000
Ciss
3000
2000
Coss
1000
ID = 15A
VDS = 20V
VGS , Gate-to-Source Voltage (V)
5000
C, Capacitance (pF)
10
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8
6
4
2
Crss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
20
Q G , Total Gate Charge (nC)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
TJ = 150 ° C
100
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.2
10us
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7809AV
16
VDS
I D , Drain Current (A)
VGS
RD
D.U.T.
RG
12
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7809AV
R DS(on) , Drain-to -Source On Resistance ( Ω )
R DS (on) , Drain-to-Source On Resistance ( Ω)
0.008
VGS = 4.5V
0.007
0.006
VGS = 10V
0.005
0
20
40
60
80
100
0.012
0.010
ID = 15A
0.008
0.006
120
2.5
3.0
3.5
4.0
4.5
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3µF
D.U.T.
+
V
- DS
QGD
500
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2µF
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V (B R )D S S
tp
L
VD S
D.U .T
RG
IA S
20 V
tp
IAS
DRIVER
+
V
- DD
0.0 1 Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
400
BOTTOM
ID
6.7A
9.5A
15A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com
IRF7809AV
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
www.irf.com
7
IRF7809AV
SO-8 Tape and Reel
T E R M IN A L N UM B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IRE C T IO N
NOTES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 30 .00
( 12 .9 9 2 )
M A X.
1 4.4 0 ( .5 6 6 )
1 2.4 0 ( .4 8 8 )
N O TES :
1 . CO N T R O L L IN G DIM E N S IO N : M IL L IME T E R .
2 . O UT L IN E C O N F O R M S T O E IA -4 8 1 & E IA -54 1 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
8
www.irf.com