IRF IRGPF30F

Previous Datasheet
Index
Next Data Sheet
PD - 9.1026
IRGPF30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast Speed IGBT
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency
curve
VCES = 900V
VCE(sat) ≤ 3.7V
G
@VGE = 15V, I C = 11A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
900
20
11
40
40
±20
10
100
42
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-255
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.24
—
6 (0.21)
1.2
—
40
—
Units
°C/W
g (oz)
Revision 0
Previous Datasheet
Index
Next Data Sheet
IRGPF30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
900
—
—
V
VGE = 0V, I C = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.83 —
V/°C VGE = 0V, I C = 1.0mA
—
2.6
3.7
IC = 11A
V GE = 15V
—
3.3
—
V
IC = 20A
See Fig. 2, 5
—
2.9
—
IC = 11A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
3.6 6.9
—
S
VCE = 100V, I C = 11A
—
—
250
µA
VGE = 0V, V CE = 900V
—
— 1000
VGE = 0V, V CE = 900V, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
22
33
IC = 11A
5.1
7.7
nC
VCC = 400V
See Fig. 8
8.0
12
VGE = 15V
27
—
TJ = 25°C
9.7
—
ns
IC = 11A, V CC = 720V
160 280
VGE = 15V, R G = 23Ω
140 240
Energy losses include "tail"
0.33 —
0.67 —
mJ
See Fig. 9, 10, 11, 14
1.0
1.9
27
—
TJ = 150°C,
12
—
ns
IC = 11A, V CC = 720V
260
—
VGE = 15V, R G = 23Ω
250
—
Energy losses include "tail"
2.0
—
mJ
See Fig. 10, 14
13
—
nH
Measured 5mm from package
560
—
VGE = 0V
50
—
pF
VCC = 30V
See Fig. 7
7.3
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 23Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-256
To Order
Pulse width 5.0µs,
single shot.
Previous Datasheet
Index
Next Data Sheet
IRGPF30F
30
L O A D C U R R E N T (A )
F or bo th :
T ria n g u la r w a v e :
D u ty c yc le : 5 0 %
TJ = 1 2 5 ° C
T s ink = 9 0 ° C
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 2 4 W
C la m p v o lta g e :
8 0 % o f ra te d
20
S q u are w av e:
6 0 % o f ra te d
v o lta g e
10
Id e a l d io d e s
0
0.1
1
10
100
f, F re q u e n c y (k H z )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
I C , Collector-to-Em itter C urrent (A )
I C , C ollector-to-E mitter C urrent (A )
T J = 2 5°C
TJ = 25 °C
TJ = 15 0 °C
10
V G E = 15 V
20 µs P UL S E W ID TH
1
1
T J = 1 50 °C
10
V C C = 1 00 V
5 µ s P U L S E W ID TH
1
10
5
10
15
V G E , G ate -to-E m itter V olta ge (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-257
To Order
20
Previous Datasheet
Index
Next Data Sheet
IRGPF30F
5.0
V G E = 15 V
V C E , C ollector-to-E m itter V oltage (V)
Maxim um D C Collector C urrent (A )
20
16
12
8
4
VG E = 1 5 V
80 µs P UL S E W ID TH
IC = 2 2A
4.0
I C = 11 A
3.0
I C = 5.5A
2.0
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
T C , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herm al Response (Z thJ C )
10
1
D = 0.5 0
0.20
PD M
0.10
0.1
0 .0 2
0 .0 1
0.01
0.00001
t
0 .05
1
t
S IN G L E PU LS E
(TH E R MAL RE S PO N SE )
N o te s :
1 . D u ty f ac t or D = t
1
/ t
2
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-258
To Order
10
Previous Datasheet
Index
Next Data Sheet
IRGPF30F
1 0 00
V G E , G ate-to-E m itter V oltage (V )
8 00
C , C ap ac ita nc e (pF )
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
V C E = 4 00 V
I C = 1 1A
16
Cies
12
6 00
Coes
4 00
2 00
Cres
8
4
0
0
1
10
0
10 0
5
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VC C
VG E
TC
IC
1 .0 8
15
20
25
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 7 20 V
= 15 V
= 25 °C
= 1 1A
T o tal S w itc hing Los se s (m J)
Total S w itching L osse s (mJ)
1 .1 0
10
Q g , Total G ate C harge (nC )
1 .0 6
1 .0 4
1 .0 2
R G = 22 Ω
V GE = 1 5 V
V CC = 72 0V
I C = 22A
I C = 1 1A
1
I C = 5.5A
1 .0 0
0.1
0 .9 8
20
25
30
35
40
45
50
-60
55
R G , G ate R es istance (Ω )
-40
-20
0
20
40
60
80
100 120 14 0 160
TC , C ase Tem peratu re (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-259
To Order
Previous Datasheet
Index
Next Data Sheet
IRGPF30F
RG
TC
V CC
VGE
5.0
100
= 22 Ω
= 150 °C
= 7 20 V
= 15 V
I C , C ollec to r-to -E m itter C u rre nt (A )
Total Sw itching Losses (m J)
6.0
4.0
3.0
2.0
1.0
0.0
VGGE E= 20 V
T J = 12 5°C
S A FE O P E R A TIN G A R E A
10
1
0.1
0
5
10
15
20
25
1
10
100
V C E , C o lle cto r-to-E m itte r V olta g e (V )
I C , C o llector-to -E m itte r Current (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix F: Section D - page D-8
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-260
To Order
Section D - page D-13
1000