Previous Datasheet Index Next Data Sheet PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 15A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 500 25 15 50 50 12 50 ± 20 100 42 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-633 To Order Min. Typ. Max. — — — — — — — 0.24 — 6 (0.21) 1.2 2.5 — 40 — Units °C/W g (oz) Revision 1 Previous Datasheet Index Next Data Sheet IRGP430UD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 500 — — V VGE = 0V, I C = 250µA — 0.46 — V/°C VGE = 0V, IC = 1.0mA — 2.3 3.0 IC = 15A V GE = 15V — 2.8 — V IC = 25A See Fig. 2, 5 — 2.6 — IC = 15A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 2.3 8.1 — S VCE = 100V, I C = 15A — — 250 µA VGE = 0V, V CE = 500V — — 2500 VGE = 0V, V CE = 500V, T J = 150°C — 1.4 1.7 V IC = 12A See Fig. 13 — 1.3 1.6 IC = 12A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During t b Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 31 6.2 12 73 72 120 100 0.7 0.4 1.1 77 75 200 190 1.5 13 660 110 12 42 80 3.5 5.6 80 220 180 116 Max. Units Conditions 47 IC = 15A 9.2 nC VCC = 400V 19 See Fig. 8 — TJ = 25°C — ns IC = 15A, V CC = 400V 180 VGE = 15V, R G = 23Ω 150 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 1.7 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 15A, V CC = 400V — VGE = 15V, R G = 23Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 I F = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 V R = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 VCC=80%(V CES), VGE=20V, L=10µH, R G= 23Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-634 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGP430UD2 20 Du ty c ycle: 5 0 % TJ = 1 2 5° C T s in k = 9 0 °C Ga te d rive a s sp e cifie d Tu rn-o n lo sse s in clu d e effe cts o f re ve rse reco ve ry Po we r D is sipation = 2 4W Load Current (A) 16 12 6 0 % o f ra te d v o lta g e 8 4 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 1000 IC , Collector-to-Em itter C urrent (A ) I C , C ollector-to-E mitter C urrent (A ) 100 TJ = 25 °C TJ = 1 50 °C 10 V G E = 15 V 20 µs P UL S E W ID TH 1 1 100 T J = 1 50 °C 10 TJ = 25 °C 1 V C C = 1 00 V 5 µ s P U L S E W ID TH 0.1 5 10 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-635 To Order 20 Previous Datasheet Index Next Data Sheet IRGP430UD2 4.5 V G E = 15 V V C E , C ollector-to-E mitter V oltage (V ) Maxim um D C Collector C urrent (A ) 25 20 15 10 5 V G E = 15 V 80 µ s P U L S E W ID TH 4.0 I C = 3 0A 3.5 3.0 2.5 I C = 1 5A 2.0 I C = 7.5 A 1.5 1.0 0 25 50 75 100 125 -60 150 T C , C ase Tem perature (°C ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R e sp ons e (Z thJ C ) 10 1 D = 0 .5 0 0 .2 0 PD M 0 .1 0 0.1 t 0 .0 5 0 .0 2 0 .0 1 0.01 0.00001 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.00 1 0.01 0.1 1 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-636 To Order 10 Previous Datasheet Index Next Data Sheet IRGP430UD2 140 0 100 0 Cies 800 Coes V G E , G ate-to-E m itter V oltage (V ) 120 0 C, C apacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 12 600 400 V C E = 4 00 V I C = 1 5A Cres 200 0 8 4 0 1 10 100 0 10 V C E , C o llector-to-Em itter V oltage (V) 10 = 400V = 15V = 25°C = 15A 1.12 1.09 1.06 A 1.03 0 10 20 30 40 40 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TC IC 30 Q G , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.15 20 50 RG = 23Ω V GE = 15V V CC = 400V I C = 30A I C = 15A 1 I C = 7.5A A 0.1 -60 60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) R G , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-637 To Order Previous Datasheet Index Next Data Sheet IRGP430UD2 4.0 100 = 23Ω = 150°C = 400V = 15V IC , Collector-to-Emitter Current (A) RG TC V CC V GE 3.0 2.0 1.0 0 10 20 30 VGE = 20V TJ = 125°C SAFE OPERATING AREA 10 A 0.0 A 1 40 1 I C , Collector-to-Emitter Current (A) 10 100 VCE, Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Instantaneous Forward Current - I F (A) Total Switching Losses (mJ) 5.0 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-638 To Order 1000 Previous Datasheet Index Next Data Sheet IRGP430UD2 100 160 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) I F = 24A I F = 12A 80 I F = 6.0A I F = 24A I F = 12A 10 IF = 6.0A 40 0 100 1 100 1000 di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 10000 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) VR = 200V TJ = 125°C TJ = 25°C Q RR - (nC) 400 I F = 24A I F = 12A 200 1000 IF = 6.0A I F = 12A 100 IF = 24A IF = 6.0A 0 100 di f /dt - (A/µs) 1000 di f /dt - (A/µs) 10 100 1000 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-639 To Order Previous Datasheet Index Next Data Sheet IRGP430UD2 90% Vge +Vge Same type device as D.U.T. Vce 430µF 80% of Vce Ic D.U.T. 90% Ic 10% Vce Ic 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ∫ t1+5µS Vce ic dt t1 ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf trr GATE VOLTAGE D.U.T. 10% +Vg Qrr = Ic ∫ trr id dt tx +Vg tx 10% Vcc 10% Irr Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 DIODE REVERSE RECOVERY ENERGY t2 t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix B: Section D - page D-4 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-640 To Order Section D - page D-13