Product specification IRLML0040TRPbF VDSS VGS Max RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ HEXFET® Power MOSFET V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits Benefits Features Low RDS(on) ( ≤ 56mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Lower switching losses Multi-vendor compatibility results in Easier manufacturing Environmentally friendly ⇒ Increased reliability Absolute Maximum Ratings Symbol VDS Parameter Max. Units 40 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 IDM Pulsed Drain Current 15 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 16 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol Parameter e RθJA Junction-to-Ambient RθJA Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRLML0040TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 40 ––– ––– ––– 0.04 ––– ––– 44 56 ––– 62 78 V Conditions VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ 1.0 1.8 2.5 ––– ––– 20 ––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.1 ––– Ω gfs Qg Forward Transconductance 6.2 ––– ––– S Total Gate Charge ––– 2.6 3.9 Qgs Gate-to-Source Charge ––– 0.7 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.4 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 20V tr Rise Time ––– 5.4 ––– td(off) Turn-Off Delay Time ––– 6.4 ––– tf Fall Time ––– 4.3 ––– Ciss Input Capacitance ––– 266 ––– Coss Output Capacitance ––– 49 ––– Crss Reverse Transfer Capacitance ––– 29 ––– IDSS IGSS Drain-to-Source Leakage Current V VGS = 10V, ID = 3.6A μA nA d d VGS = 4.5V, ID = 2.9A VDS = VGS, ID = 25μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V VDS = 10V, ID = 3.6A ID = 3.6A nC ns VDS = 20V d ID = 1.0A RG = 6.8 Ω VGS = 4.5V VGS = 0V pF VDS = 25V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD (Body Diode) Diode Forward Voltage trr Reverse Recovery Time ––– 10 ––– ns Qrr Reverse Recovery Charge ––– 9.3 ––– nC c http://www.twtysemi.com ––– ––– 1.3 A ––– ––– 15 ––– ––– 1.2 [email protected] Conditions MOSFET symbol showing the integral reverse D G S V p-n junction diode. TJ = 25°C, IS = 1.3A, VGS = 0V d TJ = 25°C, VR = 32V, IF = 1.3 A di/dt = 100A/μs d 2 of 2