NELLSEMI 20T06BI-BW

RoHS
20T Series RoHS
SEMICONDUCTOR
TRIACs, 20A
Sunbberless
FEATURES
Medium current triac
Low thermal resistance with clip bonding
A2
Low thermal resistance insulation ceramic
for insulated TO-220AB & TO-3P package
1
A1
A2
G
Clip assembly
20T series are UL certified (File ref: E320098)
TO-220AB (non-Insulated)
(20TxxA)
Packages are RoHS compliant
2
3
TO-220AB (lnsulated)
(20TxxAI)
APPLICATIONS
A2
The snubberless concept offer suppression of RC
network and it is suitable for applications such as
phase control and static switching on inductive or
resistive load.
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
1
A1 A2
G
By using an internal ceramic pad, the 20T series
provides voltage insulated tab (rated at 2500V RMS )
complying with UL standards.
TO-3P (non-Insulated)
(20TxxB)
MAIN FEATURES
2
G
TO-3P (Insulated)
(20TxxBI)
A2
SYMBOL
VALUE
UNIT
I T(RMS)
20
A
V DRM /V RRM
600 to 1000
V
I GT(Q1)
35 to 50
mA
A1 A2
G
TO-263 (D2PAK)
(20TxxH)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TO-263/TO-220AB/TO-3P
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
IT(RMS)
ITSM
VALUE
UNIT
20
A
Tc = 90ºC
TO-220AB insulated/TO-3P insulated Tc = 70ºC
F =50 Hz
t = 20 ms
200
F =60 Hz
t = 16.7 ms
210
I t
2
t p = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F =100 Hz
Peak gate current
IGM
T p =20 µs
Peak gate power dissipation (tp = 20µs)
PGM
T j =125ºC
10
PG(AV)
T j =125ºC
1
I2t Value for fusing
Average gate power dissipation
Storage temperature range
Operating junction temperature range
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A
200
A2s
T j =125ºC
50
A/µs
T j =125ºC
4
A
W
Tstg
- 40 to + 150
Tj
- 40 to + 125
ºC
Page 1 of 5
RoHS
20T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS (3 quadrants)
20Txxxx
SYMBOL
IGT(1)
QUADRANT
TEST CONDITIONS
CW
BW
35
50
Unit
I - II - III
MAX.
I - II - III
MAX.
1.5
V
I - II - III
MIN.
0.2
V
mA
V D = 12 V, R L = 33Ω
VGT
V D = V DRM , R L = 3.3KΩ
VGD
T j = 125°C
IH(2)
I T = 500 mA
IL
I G = 1.2 I GT
MAX.
I - III
MAX.
II
dV/dt(2)
(dI/dt)c(2)
40
60
50
70
60
80
mA
mA
V D = 67% V DRM , gate open ,T j = 125°C
MIN.
250
500
V/µs
(dV/dt)c = 20 A/ms, T j = 125°C
MIN.
11
18
A/ms
STATIC CHARACTERISTICS
SYMBOL
VTM(2)
TEST CONDITIONS
VALUE
UNIT
MAX.
1.55
V
T j = 125°C
MAX.
1.04
V
Dynamic resistance
T j = 125°C
MAX.
20
mΩ
VD = VDRM
VR = VRRM
T j = 25°C
5
µA
2.5
mA
VALUE
UNIT
I TM = 28 A, t P = 380 µs
T j = 25°C
Threshold voltage
R d (2)
IDRM
IRRM
Vt0
(2)
MAX.
T j = 125°C
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (AC)
S = 1 cm 2
Rth(j-a)
TO-220AB, TO-263, TO-3P
TO-220AB Insulated, TO-3P Insulated
1.3
2.1
TO-263
45
TO-220AB Insulated, TO-220AB
Junction to ambient
°C/W
60
TO-3P, TO-3P Insulated
S = Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
V
35 mA
Snubberless
TO-220AB
V
V
50 mA
Snubberless
TO-220AB
V
V
V
35 mA
Snubberless
TO-3P
20TxxB-BW/20TxxBl-BW
V
V
V
50 mA
Snubberless
TO-3P
20TxxH -CW
V
V
V
35 mA
Snubberless
D 2 PAK
20TxxH -BW
V
V
V
50 mA
Snubberless
D 2 PAK
20TxxA-CW/ 20TxxAl-CW
20TxxA-BW/20TxxAl-BW
20TxxB-CW/20TxxBl-CW
600 V
800 V
1000 V
V
V
V
AI: Insulated TO-220AB package
BI: Insulated TO-3P package
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Page 2 of 5
RoHS
20T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
BASE Q,TY
DELIVERY MODE
20TxxA-yy
20TxxA-yy
TO-220AB
2.0g
50
Tube
20TxxAI-yy
20TxxAI-yy
TO-220AB (insulated)
2.3g
50
Tube
20TxxB-yy
20TxxB-yy
TO-3P
4.3g
30
Tube
20TxxBI-yy
20TxxBI-yy
TO-3P (insulated)
4.8g
30
Tube
20TxxH-yy
20TxxH-yy
TO-263(D 2 PAK)
2.0g
50
Tube
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
A - BW
20 T 06
Current
20 = 20A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
B = TO-3P (non-insulated)
BI = TO-3P ( insulated )
H = TO-263 (D 2 PAK)
IGT Sensitivity
BW = 50mA Snubberless
CW = 35mA Snubberless
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 Correlation between maximun RMS
power dissipation and maximum allowable
temperatures (Tamb and Tcase) for different
thermal resistances heatsink + contact
P (W)
P (W)
30
Tcase (°C)
30
65
R th =0 °C/W
25
R th =0.5 °C/W
20
85
20
α =120°
15
15
α =90°
α =60°
10
I T(RMS) (A)
0
5
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10
15
20
Page 3 of 5
0
105
R th =1 °C/W
115
5
α
95
R th =1.5 °C/W
10
180°
α
α =30°
5
0
75
25
α =180°
T amb (°C)
125
0
20
40
60
80
100
120
RoHS
20T Series RoHS
SEMICONDUCTOR
Fig.3 RMS on-state current versus case temperature
(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
1
25
α =180°
20
Zth(j-c)
TO-220AB
TO-263
TO-3P
15
Zth(j-a)
10
TO-220AB (insulated)
TO-3P ( insulated )
0.1
5
Tc(°C)
0
0
10
20
30 40
50
60
70
80
0.01
1E-3
90 100 110 120 130
I
(A)
5E+2
t=20ms
Non repetitive
Tj initial=25°C
One cycle
Tj=25°C
VTM(V)
1
1E+2
ITSM (A)
Tj=Tj max
10
1E+1
1000
T j max.
V to = 1.04V
R d = 20Ωm
100
1E+0
1E-1
Fig.6 Surge peak on-state current versus number
of cycles.
Fig.5 On-state characteristics (maximum values).
1000
tp(s)
1E-2
1
2
Number of cycles
100
3
10
1
5
4
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l 2 t.
100
1000
Fig.8 Relative variation of gate trigger current and
holding current versus junction temperature.
l TSM (A), l 2 t(A 2 s)
l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C]
1000
2.5
Tj initial=25°C
2.0
I TSM
IGT
1.5
1.0
I2t
IH & IL
0.5
tp(ms)
100
0.01
0.10
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Tj(°C)
1.00
10.00
Page 4 of 5
0.0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
RoHS
20T Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
TO-3P
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Page 5 of 5
2.79 (0.110)