VDSS HiPerFETTM Power MOSFETs ID25 RDS(on) IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500 500 VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 44 48 176 192 48 A A A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 44N50 48N50 44N50 48N50 TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 PLUS 247 TO-264 Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA VGS(th) VDS = VGS, ID = 4mA V V Nm/lb.in. 6 10 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 V 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125°C 100 mA 2 mA VGS = 10 V, ID = 0.5 • ID25 Note 1 44N50 48N50 120 mW 100 mW RDS(on) ±100 nA IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved G (TAB) D TO-264 AA (IXFK) G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) rated • Molding epoxies meet UL 94 V-0 flammability classification Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density 98612B (7/00) 1-2 IXFK/IXFX 48N50Q IXFK/IXFX 44N50Q Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 30 45 S 6400 pF 930 pF 220 pF PLUS247TM (IXFX) Outline 33 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 22 ns td(off) RG = 1 W (External), 75 ns 10 ns 190 nC Dim. 40 nC 86 nC A A1 A2 b b1 b2 C D E e L L1 Q R tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.26 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 48 A Repetitive; pulse width limited by TJM 192 A IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM K/W IF = IS,-di/dt = 100 A/ms, VR = 100 V IRM 1.4 mC 10 A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 TO-264 AA (IXFK) Outline Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T © 2000 IXYS All rights reserved Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 2-2