HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 40 A 160 A 40 A IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight 1.13/10 Nm/lb.in. TO-247 TO-268 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 6 4 g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 mA 300 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4 V ±100 nA TJ = 25°C TJ = 125°C 25 1 mA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 80 mW IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved TO-268 (IXFT) Case Style G (TAB) S TO-247 AD (IXFH) (TAB) G = Gate S = Source D = Drain TAB = Drain Features • IXYS advanced low Qg process • International standard packages • Low gate charge and capacitance - easier to drive - faster switching • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space savings • High power density 98504A (6/99) 1-2 IXFH 40N30Q IXFT 40N30Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 22 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 30 S 3100 pF 650 pF 150 pF 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 35 ns td(off) RG = 1.5 W (External) 40 ns 12 ns tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 95 140 nC 25 35 nC 54 70 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 0.42 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 RthJC RthCK (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 40 A ISM Repetitive; 160 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns mC A t rr QRM IRM IF = IS-di/dt = 100 A/ms, VR = 100 V TO-268AA (D3 PAK) 0.85 8 Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 © 2000 IXYS All rights reserved Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 TO-247 AD (IXFH) Outline Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2