IXYS IXFX34N80

HiPerFETTM
Power MOSFETs
IXFK 34N80
IXFX 34N80
VDSS
ID25
RDS(on)
Single MOSFET Die
= 800 V
=
34 A
= 0.24 W
trr £ 250 ns
Avalanche Rated
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
800
800
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
34
136
36
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
64
3
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
PD
TC = 25°C
5
V/ns
560
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-264
0.9/6 Nm/lb.in.
PLUS 247
TO-264
6
10
g
g
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 3mA
800
V
VGS(th)
VDS = VGS, ID = 8mA
3.0
5.0 V
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
±200 nA
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
100 mA
2 mA
0.24
W
PLUS 247TM (IXFX)
G
(TAB)
D
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247TM package for clip or spring
mounting
• Space savings
• High power density
98560B (6/99)
1-2
IXFK 34N80
IXFX 34N80
Symbol
Test Conditions
gfs
VDS = 10 V; ID = 0.5 • ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
20
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 W (External),
tf
35
S
7500
pF
920
pF
220
pF
45
ns
45
ns
100
ns
40
ns
270
nC
60
nC
140
nC
PLUS247TM (IXFX) Outline
Dim.
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.22
0.15
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
34
A
Repetitive;
pulse width limited by TJM
136
A
IF = IS, VGS = 0 V, Note 1
1.5
V
250
ns
t rr
QRM
K/W
IF = IS, -di/dt = 100 A/ms, VR = 100 V
IRM
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
2. See characterization curves in datasheet IXFN34N80.
© 2000 IXYS All rights reserved
1.4
mC
10
A
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
2-2