Advance Technical Information High Voltage IGBT IXGH24N170 IXGT24N170 VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 50A 3.3V 250ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 50 A IC90 TC = 90°C 24 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 50 A (RBSOA) Clamped inductive load tSC VGE = 15V, TVJ = 125°C, VCE = 1000V (SCSOA) RG = 5Ω, non repetitive PC TC = 25°C @ 0.8 • VCES 10 μs 250 W -55 ... +150 °C G C C (TAB) E TO-268 (IXGT) G G = Gate E = Emitter E C (TAB) C = Collector TAB = Collector Features z TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-247) Weight TO-247 TO-268 z z z z Applications z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = IC90, VGE = 15V, Note 1 V TJ = 125°C TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 2.5 3.0 5.0 V 50 500 μA μA ±100 nA 3.3 V International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification z z z z z Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z z z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS98994A(09/08) IXGH24N170 IXGT24N170 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = IC90, VCE = 10V, Note 1 18 IC(ON) VCE = 10V, VGE = 10V TO-247 AD Outline 25 S 100 A 2400 pF 120 pF Cres 33 pF Qg 106 nC 18 nC 32 nC 42 ns 39 ns Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = IC90, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri td(off) tfi Eoff td(on) Inductive load, TJ = 25°C IC = IC25, VGE = 15V VCE = 0.8 • VCES, RG = Roff = 5Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200 400 ns 250 500 ns 8 12 mJ Inductive load, TJ = 125°C IC = IC25, VGE = 15V 50 ns tri 55 ns Eon VCE = 0.8 • VCES, RG = Roff = 5Ω 2.0 mJ td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200 ns 360 ns 12 mJ tfi Eoff RthJC RthCS 0.50 (TO-247) 0.25 °C/W 1 2 3 Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-268 Outline °C/W Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Min Recommended Footprint Terminals: 1 - Gate 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2