Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE(sat) tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions C (TAB) Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 IF110 ICM TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms 60 30 13 150 A A A A A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 60 (RBSOA) Clamped Inductive Load @ ≤ VCES PC TC = 25°C 220 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10 seconds 260 °C Md Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g TO-220 (IXGP) G C (TAB) C E TO-247 (IXGH) G C E G = Gate E = Emitter C (TAB) C = Collector TAB = Collector Features Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 5.5 V 25 μA 300 μA TJ = 125°C IGES High Power Density Low Gate Drive Requirement ±100 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.6 1.8 3.0 V V Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100142A(06/09) IXGA30N60C3C1 Symbol Test Conditions Characteristic Values (TJ = 25°C Unless Otherwise Specified) gfs Min. IC = 20A, VCE = 10V, Note 1 9 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Typ. Max. 16 S 1075 pF 196 pF Cres 29 pF Qg 38 nC Qge 8 nC Qgc 17 nC td(on) 17 ns IC = 20A, VGE = 15V, VCE = 0.5 • VCES tri Inductive Load, TJ = 25°C Eon IC = 20A, VGE = 15V td(off) VCE = 300V, RG = 5Ω 42 Note 2 47 tfi Eoff td(on) tri Eon 20 ns 0.12 mJ 0.09 75 ns ns 0.18 mJ 16 Inductive Load, TJ = 125°C IC = 20A, VGE = 15V ns 21 ns 0.16 mJ td(off) VCE = 300V, RG = 5Ω 70 ns tfi Note 2 90 ns 0.33 mJ Eoff RthJC RthCS IXGP30N60C3C1 IXGH30N60C3C1 0.56 °C/W TO-220 TO-247 0.50 0.21 °C/W °C/W Reverse Diode (SiC) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF Characteristic Values Min. Typ. Max. IF = 10A, VGE = 0V, Note 1 1.65 1.80 TJ = 125°C RthJC Notes 2.10 V V 1.10 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXGA30N60C3C1 TO-263 (IXGA) Outline TO-220 (IXGP) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain TO-247 (IXTH) Outline 1 2 Dim. ∅P 3 e Terminals: 1 - Gate 2 - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 © 2009 IXYS CORPORATION, All Rights Reserved Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 IXGP30N60C3C1 IXGH30N60C3C1 IXGA30N60C3C1 Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 180 40 VGE = 15V 13V 35 140 11V 20 9V 15 13V 120 25 IC - Amperes IC - Amperes VGE = 15V 160 30 10 100 11V 80 60 9V 40 7V 5 20 0 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.1 40 VGE = 15V 13V 11V 35 VGE = 15V 1.0 I VCE(sat) - Normalized 30 IC - Amperes IXGP30N60C3C1 IXGH30N60C3C1 9V 25 20 15 C = 40A 0.9 0.8 I = 20A C 0.7 10 I 0.6 5 C = 10A 7V 0 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 70 5.5 TJ = 25ºC 5.0 60 50 I C IC - Amperes VCE - Volts 4.5 = 40A 4.0 20A 40 TJ = 125ºC 25ºC - 40ºC 30 3.5 20 10A 3.0 10 0 2.5 7 8 9 10 11 12 13 14 15 5 VGE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 6 7 8 VGE - Volts 9 10 11 IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Fig. 8. Gate Charge Fig. 7. Transconductance 24 16 TJ = - 40ºC 20 VCE = 300V 12 I G = 10 mA I C = 20A 25ºC 16 10 125ºC VGE - Volts g f s - Siemens 14 12 8 6 8 4 4 2 0 0 0 10 20 30 40 50 60 70 80 0 5 10 Fig. 9. Capacitance 20 25 30 35 40 Fig. 10. Reverse-Bias Safe Operating Area 70 10,000 f = 1 MHz Capacitance - PicoFarads 15 QG - NanoCoulombs IC - Amperes 60 Cies 50 IC - Amperes 1,000 Coes 100 40 30 20 10 TJ = 125ºC RG = 5Ω dV / dt < 10V / ns Cres 0 100 10 0 5 10 15 20 25 30 35 40 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance for IGBT Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_30N60C3C1(4D)6-03-09 IXGA30N60C3C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 0.9 0.6 0.8 --- Eoff 0.7 0.5 TJ = 125ºC , VGE = 15V VCE = 300V I C = 40A 0.5 0.5 0.4 0.4 0.3 0.3 0.2 6 8 10 12 14 16 18 0.3 0.3 TJ = 25ºC 0.2 0.0 10 20 15 20 ---- 0.7 RG = 5Ω , VGE = 15V 170 tfi 160 TJ = 125ºC, VGE = 15V 0.4 0.4 0.3 0.3 I C = 20A 0.2 65 75 85 95 105 115 110 140 100 130 I 110 70 I 100 50 40 4 6 8 10 td(off) - - - - 18 20 TJ = 125ºC 70 80 60 60 50 40 40 TJ = 25ºC 20 30 0 20 30 35 40 80 VCE = 300V 120 t f i - Nanoseconds 80 td(off) - - - - RG = 5Ω , VGE = 15V 70 100 60 I C = 40A, 20A 80 50 60 40 40 30 20 25 IC - Amperes IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 20 125 t d(off) - Nanoseconds t f i - Nanoseconds tfi 140 t d(off) - Nanoseconds 120 25 16 90 90 20 14 160 100 VCE = 300V 15 12 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 5Ω , VGE = 15V 10 60 RG - Ohms 110 100 = 20A 80 0.0 125 180 140 C 90 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current t fi 90 = 40A 80 TJ - Degrees Centigrade 160 C 120 0.1 55 120 0.2 0.1 0 130 td(off) - - - - VCE = 300V 150 t f i - Nanoseconds Eoff - MilliJoules I C = 40A Eon - MilliJoules 0.5 45 140 0.6 0.5 35 40 t d(off) - Nanoseconds VCE = 300V 25 35 180 0.8 0.6 30 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 0.8 Eon 25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 0.2 0.1 RG - Ohms 0.7 0.4 0.0 0.0 4 TJ = 125ºC 0.4 0.1 0.1 0.1 0.5 VCE = 300V I C = 20A 0.2 ---- Eon - MilliJoules 0.6 Eon RG = 5Ω , VGE = 15V 0.6 Eon - MilliJoules Eoff - MilliJoules 0.7 0.6 Eoff - MilliJoules Eon - Eoff 0.8 IXGP30N60C3C1 IXGH30N60C3C1 IXGA30N60C3C1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 90 30 tri 80 td(on) - - - - 60 50 60 24 50 22 40 20 30 18 I C = 20A 20 16 10 14 4 6 8 10 12 14 16 18 22 VCE = 300V t r i - Nanoseconds t r i - Nanoseconds I C = 40A td(on) - - - - RG = 5Ω , VGE = 15V TJ = 125ºC 40 20 30 18 TJ = 25ºC 20 16 10 14 0 20 12 10 15 20 25 RG - Ohms td(on) - - - 20 t r i - Nanoseconds I C = 40A 55 19 45 18 35 17 I C = 20A 25 16 15 45 55 65 75 85 95 105 115 15 125 16 t d(on) - Nanoseconds VCE = 300V IF - Amperes RG = 5Ω , VGE = 15V 35 40 20 21 25 35 Fig. 21. Forward Current vs. Forward Voltage 75 tri 30 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 65 t d(on) - Nanoseconds 26 t d(on) - Nanoseconds VCE = 300V 24 tri 28 TJ = 125ºC, VGE = 15V 70 IXGP30N60C3C1 IXGH30N60C3C1 TJ = 25ºC TJ = 125ºC 12 8 4 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VF - Volts TJ - Degrees Centigrade Fig. 22. Maximum Transient Thermal Impedance for Diode 10.000 Z (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_30N60C3C1(4D)6-03-09