IXYS IXGK80N60A

Preliminary data
HiPerFASTTM IGBT
IXGK80N60A
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; R GE = 1 MΩ
600
V
VCES
IC25
VCE(sat)
tfi
= 600 V
=
80 A
=
2.7 V
= 275 ns
Maximum Ratings
TO-264 AA
V GES
Continuous
±20
V
V GEM
Transient
±30
V
I C25
TC = 25°C, limited by leads
80
A
I C90
TC = 90°C
80
A
I CM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 30 µH
ICM = 100
@ 0.8 VCES
A
PC
TC = 25°C
500
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
0.9/6
Nm/lb.in.
10
g
300
°C
TJ
Md
Mounting torque (M4)
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
G
C
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard package
JEDEC TO-264 AA
• Two mached dice connected in parallel
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
BVCES
IC
= 500 µA, VGE = 0 V
600
VGE(th)
IC
= 500 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
©1997 IXYS Corporation. All rights reserved.
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
V
5
V
400
2
µA
mA
±100
nA
2.7
V
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Reduces assembly time and cost
• High power density
96524A (5/97)
IXGK80N60A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
gfs
I C = 40A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
30
50
S
400
nC
70
nC
Qgc
160
nC
Cies
8000
pF
860
pF
200
pF
Qg
Qge
Coes
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
td(on)
Inductive load, TJ = 25°°C
tri
td(off)
tfi
Eoff
50
ns
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 V CES, RG = Roff = 2.7 Ω
210
ns
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
350
500
ns
10
12.5
mJ
td(on)
300
ns
50
ns
tri
Inductive load, TJ = 125°° C
240
ns
Eon
IC = IC90, VGE = 15 V, L = 100 µH
3
mJ
td(off)
VCE = 0.8 V CES, RG = Roff = 2.7 Ω
400
ns
tfi
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
600
ns
15
mJ
Eoff
0.25 K/W
RthJC
RthCK
TO-264 AA Outline
0.15
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025