2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V) 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −200 V) • Enhancement model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA) １．６ • ０．６ MAX． ５．５±０．２ ６．５±０．２ １．１±０．２ １ ０．６ MAX ２．３ ２ ３ ２．３±０．２ ２．３ ５．７ ４．１±０．２ ０．９ Maximum Ratings (Ta = 25°C) ０．８ MAX． １．1 MAX． Characteristic ０．６±０．１５ ０．６±０．１５ Symbol Rating Unit Drain-source voltage VDSS −200 V Drain-gate voltage (RGS = 20 kΩ) VDGR −200 V Gate-source voltage VGSS ±20 V JEDEC ― A JEITA ― DC (Note 1) ID −2.5 Pulse (Note 1) IDP −10 Drain power dissipation (Tc = 25°C) PD 20 W Single pulse avalanche energy (Note 2) EAS 97.5 mJ Avalanche current IAR −2.5 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2004-12-24 2SJ680 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = −200 V, VGS = 0 V ⎯ ⎯ −100 µA V (BR) DSS ID = −10 mA, VGS = 0 V −200 ⎯ ⎯ V Vth VDS = −10 V, ID = −1 mA −1.5 ⎯ −3.5 V Drain-source ON-resistance RDS (ON) VGS = −10 V, ID = −1.5 A ⎯ 1.6 2.0 Ω Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −1.5 A 1.0 2.0 ⎯ S Input capacitance Ciss ⎯ 410 ⎯ Reverse transfer capacitance Crss ⎯ 40 ⎯ Output capacitance Coss ⎯ 145 ⎯ ⎯ 20 ⎯ ⎯ 45 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr Turn-on time ton tf Turn-off time RL = 66.7 Ω 50 Ω Switching time Fall time ID = −1.5 A VOUT 0V VGS −10 V Duty < = 1%, tw = 10 µs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“Miller”) charge Qgd pF ns ⎯ 15 ⎯ ⎯ 85 ⎯ ⎯ 10 ⎯ ⎯ 6 ⎯ ⎯ 4 ⎯ VDD ∼ − −100 V VDD ∼ − −160 V, VGS = −10 V, ID = −2.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Symbol Test Condition Min Typ. Max Unit IDR ⎯ ⎯ ⎯ −2.5 A ⎯ ⎯ ⎯ −10 A Forward voltage (diode) VDSF IDR = −2.5 A, VGS = 0 V ⎯ ⎯ 2.0 V Reverse recovery time trr IDR = −2.5 A, VGS = 0 V, ⎯ 135 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/µs ⎯ 0.81 ⎯ µC Pulse drain reverse current (Note 1) IDRP Marking J680 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-12-24 2SJ680 ID – VDS −2.0 −6 −5 −4.8 Common source Tc = 25°C, pulse test −6 −10 −8 −4 −15 ID −1.2 −4.4 −4.2 −0.8 −5.75 −5.5 (A) −4.6 Drain current ID Drain current −8 −10 −15 (A) −1.6 Common source Tc = 25°C pulse test ID – VDS −5 VGS = −4 V −0.4 −5.25 −3 −5 −4.8 −2 −4.6 −4.4 −1 −4.2 VGS = −4 V 0 0 −1 −2 −3 Drain-source voltage −4 0 0 −5 −10 (V) VDS −20 Drain-source voltage ID – VGS −40 −50 VDS (V) VDS – VGS −10 −10 Common source Common source Tc = −55°C Tc = 25°C −8 pulse test 25 −4 100 Drain-source voltage ID −6 Drain current VDS (A) (V) VDS = −10 V pulse test −8 −2 0 0 −2 −4 −6 Gate-source voltage −8 VGS −6 ID = −2.5 A −4 −1.5 −2 −0.8 0 0 −10 −4 (V) −8 ⎪Yfs⎪ – ID VGS −16 −20 (V) RDS (ON) – ID 10 Common source (S) −12 Gate-source voltage 10 Common source VDS = −10 V pulse test Tc = 25°C pulse test Tc = −55°C Drain-source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ −30 25 100 1 0.1 −0.1 −1 Drain current VGS = −10 V −15 1 0.1 −0.1 −10 ID (A) −1 Drain current 3 −10 ID (A) 2004-12-24 2SJ680 RDS (ON) – Tc IDR – VDS −10 6 Common source VGS = −10 V pulse test Common source ID = −1.5 A Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (Ω) 5 −1.2 4 3 −1.0 2 1 Tc = 25°C pulse test −1 −5 0 −80 −40 0 40 Case temperature 80 Tc 120 −0.1 0 160 −3 0.2 (°C) −1 0.4 Drain-source voltage Capacitance – VDS 1 VDS (V) 5 Common source Vth (V) Ciss Gate threshold voltage 100 C (pF) 0.8 Vth – Tc 1000 Capacitance VGS = 0 V 0.6 Coss 10 Crss Common source VGS = 0 V f = 1 MHz VDS = 10 V 4 ID = 1 mA pulse test 3 2 1 0 −80 Tc = 25°C 1 −0.1 −1 −10 Drain-source voltage −40 0 40 80 Case temperature −100 Tc 120 160 (°C) VDS (V) PD – Tc Dynamic input/output characteristics 40 VDS 10 0 0 40 80 Case temperature 120 Tc −180 (°C) Common source ID = −2.5 A Tc = 25°C pulse test −80 −8 −80 −40 0 0 160 −12 −120 −4 VGS 4 8 12 16 VGS VDS = −40 V Gate-source voltage 20 (V) −16 (V) VDS 30 Drain-source voltage Drain power dissipation PD (W) −160 20 Total gate charge Qg (nC) 4 2004-12-24 2SJ680 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 0.5 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 Single pulse PDM t 0.01 0.01 0.005 0.003 T Duty = t/T Rth (ch-c) = 6.25°C/W 0.001 10 µ 100 µ 1m 10 m 100 m Pulse width tw 1 10 (S) Safe operating area EAS – Tch −30 100 100 µs* (mJ) ID max (pulse) * −5 1 ms* −1 Avalanche energy Drain current ID (A) −3 EAS −10 −0.5 −0.3 DC operation −0.1 −0.05 −0.03 −0.005 −0.1 80 60 40 20 * Single nonrepetitive pulse Tc = 25°C 0 25 Curves must be derated −0.01 100 VDSS max linearly with increase in 50 100 Channel temperature temperature. −0.3 75 −1 −3 −10 Drain-source voltage −30 −100 Tch 125 150 (°C) −300 VDS (V) 15 V BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = −50 V, L = 25.2 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V DD ⎠ ⎝ VDSS 2004-12-24