MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3652 (FDB3652) TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 2.54-0.2 +0.2 15.25-0.2 Low QRR Body Diode +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 8.7-0.2 Low Miller Charge 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current-Continuous TC=25 ID TA=25 Power dissipation PD 61 9 A 150 W 1.0 Derate above 25 A W/ Thermal Resistance Junction to Ambient RèJA 43 /W Thermal Resistance, Junction-to-Case RèJC 1.0 /W Channel temperature Tch 175 Storage temperature Tstg -55 to +175 www.kexin.com.cn 1 MOSFET SMD Type KDB3652 (FDB3652) Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Symbol VDSS Drain cut-off current IDSS Gate leakage current IGSS Testconditons ID=250ìA VGS=0V Min Typ 105 Drain to source on-state resistance Input capacitance RDS(on) 1 250 VGS= 20V VDS = VGS, ID = 250ìA Coss Reverse transfer capacitance Crss VGS=6V,ID=30A 0.018 0.026 VGS=10V,ID=61A,TC=175 0.035 0.043 VDS=25V,VGS=0,f=1MHZ Qg(TOT) VGS = 0V to 10V Threshold Gate Charge Qg(TH) VGS = 0V to 2V Qgs Gate Charge Threshold to Plateau Qgs2 Gate to Drain "Miller" Charge Qgd Turn-On Time tON Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge www.kexin.com.cn VDS = 50 V, ID = 61A,Ig=1.0mA tr tf V Ù 390 pF 100 pF 41 53 5 6.5 nC nC 15 nC 10 nC nC ns 12 ns 85 ns 26 ns 45 ns 107 ns ISD=61A 1.25 V tOFF VSD A nA pF 146 VDD = 50 V, ID = 61A, VGS = 10 V, RGEN = 6.8 A 2880 10 td(ON) td(OFF) 4.0 0.014 0.016 Total Gate Charge at 10V Gate to Source Gate Charge 100 2.0 VGS=10V,ID=61A Ciss Output capacitance Turn-On Delay Time 2 VGS(th) Unit V VDS=80V,VGS=0 VDS=80V,VGS=0,TC=150 Gate threshold voltage Max ISD=30A 1.0 V trr ISD = 61A, dISD/dt =100A/ìs 62 ns QRR ISD = 61A, dISD/dt =100A/ìs 45 nC