SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. H J B D C K M P FEATURES N E VDSS=40V, ID=54A. Low Drain-Source ON Resistance. G : RDS(ON)=8.5m (Max.) @ VGS=10V F : RDS(ON)=11m (Max.) @ VGS=4.5V L F Super High Dense Cell Design. High Power and Current Handling Capability. MAXIMUM RATING (Ta=25 1 SYMBOL N-Ch UNIT Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS 20 DC@TC=25 (Note1) ID 54 Pulsed (Note2) IDP 100 IS 100 Drain-Source-Diode Forward Current Drain Power Dissipation 3 MILLIMETERS A B _ 0.2 6.6 + _ 0.2 6.1 + C _ 0.3 5.34 + D _ 0.2 0.7 + E _ 0.3 9.3 + F _ 0.2 2.3 + G _ 0.1 0.76 + H _ 0.1 2.3 + J _ 0.1 0.5 + K _ 0.2 1.8 + L _ 0.1 0.5 + M N _ 0.1 1.0 + 0.96 MAX P _ 0.3 1.02 + Unless otherwise Noted) CHARACTERISTIC Drain Current 2 DIM @TC=25 (Note1) @Ta=25 (Note2) PD A A Type Name W 3.1 150 Tstg -55 150 (Note1) RthJC 2.8 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W Storage Temperature Range Thermal Resistance, Junction to Case Marking 45 Tj Maximum Junction Temperature IPAK(1) V KMB 054N40 IA Lot No Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1” 1” Pad of 2 oz copper. PIN CONNECTION (TOP VIEW) 2 D 2 1 2009. 7. 30 1 3 G S Revision No : 0 3 1/5 KMB054N40IA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250 A 40 - - V Drain Cut-off Current IDSS VGS=0V, VDS=32V - - 1 A Gate Leakage Current IGSS VGS= - - 100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.9 3 V VGS=10V, ID=14A - 6.5 8.5 VGS=4.5V, ID=11A - 8.5 11 VGS=10V, ID=14A, Tj=125 - 10.4 14 VDS=10V, ID=20A - 58 - - 1280 - - 250 - Drain-Source Breakdown Voltage RDS(ON)* Drain-Source ON Resistance gfs* Forward Transconductance 20V, VDS=0V m S Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 125 - VGS=10V Qg* - 25.4 - VGS=5V Qg* - 13.8 - - 5.7 - Total Gate Charge VDS=20V, f=1MHz, VGS=0V VDS=20V, VGS=10V, ID=14A nC Gate-Source Charge Qgs* Gate-Drain Charge Qgd* - 5.4 - Turn-On Delay Time td(on)* - 19 - VDD=20V, VGS=10V - 16 - ID=1A, RG=6 - 60 - - 14 - - 0.8 1.2 tr* Turn-On Rise Time td(off)* Turn-Off Delay Time tf* Turn-Off Fall Time pF ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage Note>* Pulse Test : Pulse width <300 2009. 7. 30 VGS=0V, IS=14A V , Duty cycle < 2% Revision No : 0 2/5 KMB054N40IA Fig2. RDS(ON)-ID VGS=10V 6.0V 5.0V 4.5V 80 60 4.0V 40 20 3.5V 0 0 0.5 1 1.5 2 2.5 Drain Current ID (A) 60 40 25 C 20 Ta=125 C -55 C 0 2.5 3 3.5 4 4.5 VGS=10V 0 0 6 12 18 24 30 20 VGS=10V, ID=14A 16 12 8 4 0 -75 -50 -25 0 25 50 75 100 125 150 Gate Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Fig6. IS - VSDF 1000 VGS=VDS ID=250µA Reverse Drain Current IS (A) Gate Threshold Voltage Vth (V) 2 1.5 4 3 2 1 100 Ta=125 C Ta=25 C 10 1 0.1 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2009. 7. 30 VGS=4.5V Fig4. RDS(on) - Tj 80 0 -75 15 Fig3. ID - VGS VDS=5V 5 Ta=25 C Drain - Current ID (A) 100 1 30 Drain - Source Voltage VDS (V) Drain-Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) 100 Drain Source On Resistance RDS(ON) (mΩ) Fig1. ID - VDS Revision No : 0 0.2 0.4 0.6 0.8 1 1.2 Source - Drain Forward Voltage VSDF (V) 3/5 KMB054N40IA Fig 8. C - VDS Fig 7. VGS - Qg 2000 VDS = 20V ID = 14A f=1MHz 8 1500 Capacitance (pF) Gate - Source Voltage VGS (V) 10 6 4 Ciss 1000 500 2 0 Coss Crss 0 10 5 0 20 15 25 0 30 10 20 30 40 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 103 Drain Current ID (A) RDS(ON) Limited 102 10µs 100us 1ms 10ms DC 101 100 VGS= 10V SINGLE PULSE TC= 25 C 10-1 10-1 100 101 102 Normalized Effective Transient Thermal Resistance Drain - Source Voltage VDS (V) Fig10. Transient Thermal Response Curve 10 1 1 D = 0.5 PDM 0.2 t1 0.1 0.05 0.02 -1 10 t2 - Duty = t/T Tj(max) - Tc - RthJC = PD SINGLE 0.01 -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration tw (sec) 2009. 7. 30 Revision No : 0 4/5 KMB054N40IA Fig11. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig12. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2009. 7. 30 Revision No : 0 td(off) tf toff 5/5