SEMICONDUCTOR KMB6D0DN35QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T P D L G FEATURES A VDSS=35V, ID=6A. DIM A B1 B2 D G H L P T Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V 8 5 B1 B2 Super High Dense Cell Design 1 Very fast switching MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 35V V Gate Source Voltage VGSS 20 V DC ID * 6 A Pulsed IDP 20 A IS 1.3 A 2 W 1.6 W Drain Current Drain Source Diode Forward Current Drain Power Dissipation 4 MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 25 PD * 100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Tj -50~150 Tstg -50~150 RthJA* 62.5 FLP-8 Marking Type Name KMB6D0DN 35QA 721 Lot No. /W * : Surface Mounted on FR4 Board PIN CONNECTION (TOP VIEW) S1 1 8 D1 1 8 G1 2 7 D1 2 7 S2 3 6 D2 3 6 G2 4 5 D2 4 5 2007. 8. 13 Revision No : 1 1/5 KMB6D0DN35QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250 A, VGS=0V 35 - - V Drain Cut-off Current IDSS VDS=24V, VGS=0V - - 1 A Gate Leakage Current IGSS VGS= - - 100 Gate Threshold Voltage Vth* VDS=VGS, ID=250 A 1.0 2.0 3.0 VGS=10.0V, ID=6A - 24 28 VGS=4.5V, ID=4.9A - 35 42 VDS=5V, VGS=10V 20 - - A - 20 - S - 740 - - 170 - Drain-Source Breakdown Voltage 25V, VDS=0V RDS(ON)* Drain-Source ON Resistance ID(ON)* On-State Drain Current gfs* Forward Transconductance VDS=10V, ID=6A nA V m Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 75 - Total Gate Charge Qg* - 7.0 10.0 Gate-Source Charge Qgs* - 3.8 - Gate-Drain Charge Qgd* - 2.5 - Turn-On Delay Time td(on)* - 8 16 VDD=15V, VGS=10V - 13 24 ID=1A, RG=6 - 18 29 - 8 6 - 0.75 1.2 tr* Turn-On Rise Time td(off)* Turn-Off Delay Time VDS=15V, f=1MHz, VGS=0V VDS=10V, VGS=5V, ID=6A (Note 1) tf* Turn-Off Fall Time pF nC ns Source-Drain Diode Ratings VSDF Source-Drain Forward Voltage Note>*Pulse Test : Pulse width 2007. 8. 13 300 , Duty cycle Revision No : 1 IDR=1.7A, VGS=0V V 2% 2/5 KMB6D0DN35QA Fig2. RDS(on) - ID 20 VGS=4.5 Drain Current ID (A) VGS=10 Common Source Tc= 25 C Pulse Test 16 VGS=5 12 VGS=4.0 8 VGS=3.5 4 VGS=3.0 0 0 2 4 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 0.16 Common Source 0.14 Tc= 25 C Pulse Test 0.12 0.1 0.08 VGS=4.5 0.06 0.04 VGS=10.0 0.02 0 0 5 Drain - Source Voltage VDS (V) Drain Source On Resistance RDS(ON) (mΩ) Drain Current ID (A) 50 Common Source VDS=5V Pulse Test 15 10 125 C 25 C 5 -55 C Common Source VDS=10V Pulse Test 40 30 20 10 0 1 2 3 4 5 -80 -40 0 Fig5. Vth - Tj 10 Reverse Drain Current IDR (A) VGS=VDS ID=250µA 4 Pulse Test 3 2 1 -40 80 0 40 120 160 Fig6. IDR - VSDF 5 Common Source 0 -80 40 Junction Temperature Tj ( C ) Gate - Source Voltage VGS (V) Gate Threshold Voltage Vth (V) 20 Fig4. RDS(on) - Tj 0 80 120 Junction Temperature Tj ( C ) 2007. 8. 13 15 Drain Current ID (A) Fig3. ID - VGS 20 10 Revision No : 1 160 Common Source Tc= 25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMB6D0DN35QA Normalized Effective Transient Thermal Resistance Fig7. Transient Thermal Response Curve 100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 PDM t1 10-2 t2 Single Pluse Duty Cycle D = t1/t2 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) Fig8. Safe Operation Area Drain Current ID (A) 102 Operation in this area is limited by RDS(ON) 101 1ms 10ms 100ms 100 10-1 10-2 -1 10 100µs 1s DC 10s VGS= 10V SINGLE PULSE TA = 25 C 100 101 102 Drain - Source Voltage VDS (V) 2007. 8. 13 Revision No : 1 4/5 KMB6D0DN35QA Fig. 1 Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig. 2 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω 10 V VDS VGS VGS 10% td(on) tr ton 2007. 8. 13 Revision No : 1 td(off) tf toff 5/5