Transistors IC SMD Type P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low threshold voltage VGS(th) Direct interface to C-MOS, TTL,etc. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 High-speed switching 4 No secondary breakdown. 1 1 gate 3 2 +0.1 0.70-0.1 2.9 4.6 2,4 drain 3 source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating drain-source voltage -VDS 240 V gate-source voltage (open drain) VGSO 20 V DC drain current -ID 180 mA peak drain current -IDM 720 mA total power dissipation (up to Tamb = 25 *) Ptot 1.5 W storage temperature range Tstg -65 to 150 Tj 150 Rth j-a 83.3 junction temperature from junction to ambient* Unit K/W * Transistor mounted on an epoxy printed circuit board, 40X40 X 1.5 mm, mounting pad for the drain tab minimum 6 cm2. www.kexin.com.cn 1 Transistors IC SMD Type KSP92 Electrical Characteristics Ta = 25 Parameter drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage unless otherwise specified. Symbol -V(BR)DSS -IDSS Testconditons -ID = 10ìA; VGS = 0 Min VGS = 20 V; VDS = 0 -VGS(th) -ID = 1 mA; VGS = VDS 0.8 -ID = 50 mA; -VDS = 5 V 0.8 -ID = 180 mA; -VGS = 10 V drain-source on-resistance RDS(on) Unit 1 mA 100 nA 2 V 2.8 V V 10 20 -ID = 100 mA; -VGS = 5 V 18 -ID = 25 mA; -VGS = 2.8 V 20 transfer admittance |Yfs| -ID = 180 mA; -VDS = 25 V input capacitance Ciss -VDS = 25 V; VGS = 0; f = 1 MHz 65 90 pF output capacitance Coss -VDS = 25 V; VGS = 0; f = 1 MHz 20 30 pF feedback capacitance Crss -VDS = 25 V; VGS = 0; f = 1 MHz 6 15 pF turn-on time (see Figs 1 and 2) ton -ID = 250 mA; -VDD = 50 V;-VGS = 0 to 10 V 5 10 ns turn-off time (see Figs 1 and 2) toff -ID = 250 mA; -VDD = 50 V;-VGS = 0 to 10 V 20 30 ns Fig.1 Switching times test circuit. 2 Max 240 -VDS = 200 V; VGS = 0 IGSS -VGS Typ www.kexin.com.cn 100 200 mS Fig.2 Input and output waveforms.