KST42/43 KST42/43 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST42 : KST43 300 200 V V : KST42 : KST43 300 200 V V Collector Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current 500 mA PC Collector Power Dissipation 350 mW TSTG Storage Temperature 150 °C RTH(j-a) Thermal Resistance junction to Ambient 357 °C/W Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Emitter Breakdown Voltage : KST42 : KST43 Test Condition IC=100µA, IE=0 * Collector -Emitter Breakdown Voltage : KST42 : KST43 IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 ICBO Collector Cut-off Current VCB=200V, IE=0 IEBO Emitter Cut-off Current VCB=5V, IC=0 hFE * DC Current Gain VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE (sat) * Collector-Emitter Saturation Voltage VBE (sat) * Base-Emitter Saturation Voltage Cob Output Capacitance BVCEO : KST42 : KST43 fT Current Gain Bandwidth Product Min. Max. Units 300 200 V V 300 200 V V 6 V 0.1 µA 0.1 µA IC=20mA, IB=2mA 0.5 V IC=20mA, IB=2mA 0.9 V 3 4 pF pF 25 40 40 VCB=20V, IE=0 f=1MHz VCE=20V, IC=10mA f=100MHz 50 MHz * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 Marking Code Type KST42 KST43 Mark 1D 1E Marking 1D ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST42/43 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics hFE, DC CURRENT GAIN 1000 VCE = 10V 100 10 1 10 10 IC = 10 IB VBE(sat) 1 V CE(sat) 0.1 0.01 1 100 10 IC[mA], COLLECTOR CURRENT 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Ccb [pF], CAPACITANCE IE = 0 f = 1MHz 10 1 0.1 1 10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Base Capacitance ©2002 Fairchild Semiconductor Corporation 100 120 100 VCE = 20V 80 60 40 20 0 1 10 100 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A2, November 2002 KST42/43 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1