JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC2316 TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current 0.8 A ICM: Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA, IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=120V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=5V, IC=10mA 60 hFE(2) VCE=5V, IC=100mA 80 VCE(sat) IC=500mA, IB=50mA fT VCE=5V, IC=100mA Cob VCB=10V, IE=0, f=1MHz DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance 240 1 120 Rank Range Marking MHz 30 CLASSIFICATION OF hFE(1) O Y 80-160 120-240 V pF