SEMICONDUCTOR KTD2686 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DARLINGTON TRANSISTOR. SOLENOID DRIVER. MOTOR DRIVER. A FEATURES C H High DC Current Gain G J B E : hFE=2000(Min.) (VCE=2V, IC=1A) MAXIMUM RATINGS (Ta=25 CHARACTERISTIC D ) K SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO 8 DC IC 1 Pulse ICP 3 IB 0.5 Collector Current Base Current Collector Power t=10S Dissipation DC 60 150 Storage Temperature Range Tstg -55 150 1 F 2 3 V A MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) A 3. EMITTER W 1 Tj F V 10 2.5 PC * Junction Temperature DIM A B C D E F G H J K D SOT-89 * Pc : Package mounted on FR4 board (Cu area : 645 , glass epoxy, t=1.6 ) COLLECTOR EQUIVALENT CIRCUIT Marking BASE A2 Type Name Lot No. ∼ − 300Ω ∼ − 5kΩ EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Switching Time TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=45V, IE=0 - - 10 A ICEO VCE=45V, IB=0 - - 10 A IEBO VEB=8V, IC=0 0.8 - 4 mA V(BR)CEO IC=10mA, IB=0 50 60 70 V hFE VCE=2V, IC=1A 2000 - - VCE(sat)1 IC=0.5A, IB=1mA - - 1.2 VCE(sat)2 IC=1A, IB=1mA - - 1.5 VBE(sat) IC=1A, IB=1mA - - 2.0 - 0.4 - - 4.0 - - 0.6 - ton tstg V V VCC =30V 30Ω 20µs Storage Time 5V OUTPUT S INPUT Fall Time 2004. 11. 22 SYMBOL Revision No : 1 tf 0V DUTY CYCLE < = 1% 1/2 KTD2686 I C - V BE I C - V CE COLLECTOR CURRENT IC (A) 0.3 2.4 3.2 COMMON EMITTER Ta=25 C 0.5 0.22 1.6 0.20 0.8 I B =0.18mA 0 4 2 0 6 2.4 1.6 0.8 0 8 COMMON EMITTER VCE =2V Ta=100 C COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE COMMON 5000 EMITTER VCE =2V 3000 C C 5 C =2 55 a T = Ta 300 100 0.03 0.05 0.1 0.3 0.5 3.2 V CE(sat) - I C 10000 500 2.4 BASE EMITTER VOLTAGE VBE (V) h FE - I C 1000 Ta=-55 C 1.6 0.8 0 COLLECTOR EMITTER VOLTAGE V CE (V) 00 =1 Ta Ta=2 5C 1 3 COLLECTOR CURRENT IC (A) 3.2 3 1 5 10 COMMON EMITTER I C /I B =500 5 3 Ta=-55 C 1 Ta=25 C 0.5 0 C Ta=10 0.3 0.1 10 COLLECTOR CURRENT I C (A) 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 10 10 5 COLLECTOR CURRENT I C (A) COMMON EMITTER I C /I B =500 3 Ta=55 C 1 Ta=25 C Ta=100 C 0.5 0.3 0.1 0.3 0.5 1 3 COLLECTOR CURRENT I C (A) 5 10 I C MAX(Pulse) ms *1 s 0m *1 COLLECTOR EMITTER SATURATION VOLTAGE VBE(sat) (V) V BE(sat) - I C I C MAX(Continuous) 1 DC Op era 0.1 tio n (* SINGLE NONREPETITIVE PULSE Ta=25 C ) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON FR4 BOARD (Cu area : 645 mm2, glass epoxy, t=1.6mm) 0.01 0.1 1 10 100 COLLECTOR EMITTER VOLTAGE V CE (V) 2004. 11. 22 Revision No : 1 2/2