SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G (Thin Super Mini type with 6 pin) K B 3 4 DIM A B C D E 5 4 I 6 C EQUIVALENT CIRCUIT (TOP VIEW) L D A ᴌReduce a quantity of parts and manufacturing process. F ᴌSimplify circuit design. J Marking Q1 h FE Rank Q2 Type Name 1 2 6 5 4 2 3 B Lot No. 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 J F G MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 H I _ 0.05 0.16 + 0.00-0.10 J 0.25+0.25/-0.15 K L 0.60 0.55 H EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR 3 1 TS6 Q1 MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 Ὠ Emitter Current IE -500 Ὠ SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 Ὠ Emitter Current IE 500 Ὠ SYMBOL RATING UNIT PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Q2 MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC Q1, Q2 MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) 2002. 1. 24 Revision No : 1 1/4 KTX111T Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 ὧ Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ὧ hFE(1) (Note) VCE=1V, IC=100Ὠ 70 - 240 hFE(2) (Note) VCE=6V, IC=400Ὠ 25 - - VCE(SAT) IC=100Ὠ, IB=10Ὠ - 0.1 0.25 V Base-Emitter Voltage VBE VCE=1V, IC=100Ὠ - 0.8 1.0 V Transition Frequency fT VCE=6V, IC=20Ὠ - 300 - ὲ VCB=6V, IE=0, f=1ὲ - 7.0 - ὸ MIN. TYP. MAX. UNIT. DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note) hFE(1) Classification O:70~140, Y:120~240. hFE(2) Classification O:25(Min), Y:40(Min). Q2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 ὧ Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 ὧ hFE(1) (Note) VCE=-1V, IC=-100Ὠ 70 - 240 hFE(2) (Note) VCE=-6V, IC=-400Ὠ 25 - - VCE(SAT) IC=-100Ὠ, IB=-10Ὠ - -0.1 -0.25 V Base-Emitter Voltage VBE VCE=-1V, IC=-100Ὠ - -0.8 -1.0 V Transition Frequency fT VCE=-6V, IC=-20Ὠ - 200 - ὲ VCB=-6V, IE=0, f=1ὲ - 13 - ὸ DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note) hFE(1) Classification O:70~140, Y:120~240. hFE(2) Classification O:25(Min), Y:40(Min). 2002. 1. 24 Revision No : 1 2/4 KTX111T Q 1 (NPN TRANSISOR) h FE - I C I C - VCE 500 COMMON EMITTER Ta=25 C 400 6.0 4.0 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 500 3.0 300 2.0 200 1.0 0.5 100 0 300 100 Ta=-25 C Ta=25 C 50 VCE =1V 30 COMMON EMITTER I B =0.1mA 10 0 0 1 2 3 4 0.5 1 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 3 COMMON EMITTER 1k VCE =6V 25 C -25 Ta= 50 30 Ta= Ta= 100 C C 500 300 100 10 5 0 0.2 0.4 30 100 300 1k 300 1K VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2k 10 COLLECTOR CURRENT I C (mA) I B - VBE BASE CURRENT I B (µA) VCE =6V Ta=100 C 0.6 0.8 1.0 1 0.5 0.3 COMMON EMITTER I C /I B =10 0.1 Ta=100 C 0.05 Ta=25 C Ta=-25 C 0.03 0.01 0.5 1 3 BASE-EMITTER VOLTAGE VBE (V) 10 30 100 COLLECTOR CURRENT I C (mA) Q 2 (PNP TRANSISOR) h FE - I C I C - VCE -8 -7 -500 -6 -5 -3 -300 -2 -200 I B =-1mA -100 0 0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VCE (V) Revision No : 1 COMMON EMITTER 500 -4 -400 0 2002. 1. 24 1k COMMON EMITTER Ta=25 C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -600 -5 300 VCE =-6V Ta=100 C Ta=25 C 100 Ta=-25 C VCE =-1V 50 30 10 -0.3 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) 3/4 KTX111T -3k -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 COMMON -1k Ta=25 C Ta=-25 C EMITTER VCE =-6V -300 -100 -30 Ta=2 5 C Ta=25 C COMMON EMITTER I C /I B =10 Ta=1 00 C -3 I B - VBE BASE CURRENT I B (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) V CE(sat) - I C -10 -3 -1 -0.3 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 1.2 MOUNTED ON A CERAMIC BOARD 1.0 (600mm 2 `0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2002. 1. 24 Revision No : 1 4/4