LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET KEY FEATURES DESCRIPTION gurations including traditional wirebond or flip chip assembly This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier. Microsemi can assemble die on standard TO packaging and custom configurations. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com LX3051 single die Coplanar Waveguide , 50 ohm High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side 125µm Pad pitch Die good for bond wire or flip chip applications APPLICATIONS WWW . Microsemi .C OM Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. The LX3051 3Gbps coplanar waveguide photodiode is currently offered in die form allowing manufacturers the versatility of custom assembly confi- 1310nm CATV Optical Applications SONET/SDH OC-48, ATM 2.5Gb/s or 3.125Gb/s Ethernet (8B/10B) Fibre Channel 1310nm VCSEL receivers Optical Backplane BENEFITS Large Wirebond Contact Pads Low Contact Resistance Wire bond or flip chip applications Ground- signal-Ground pad configuration for standard RF test probes PRODUCT HIGHLIGHT • • • • Coplanar Design (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test Large 75um x 75um pad size for ease of packaging Wire bond or Flip Chip capability LX3051 Copyright 2002 Rev. 0.6a Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET Parameter ` ` Symbol MAXIMUM RATINGS Operating Junction Temperature Range Storage Temperature Range Maximum Soldering Temperature ELECTRICAL CHARACTERISTICS Active Area Diameter Responsivity (1) Dark Current Breakdown Voltage Capacitance Bandwidth (2) Note Test Conditions Min TJ TSTG LX3051 Typ -20 -55 VR = 5V, λ= 1550nm VR = 5V, λ = 1310nm VR = 5V IR = 10µ A VR = 5V VR = 5V, λ = 1550nm @-3dB ID BVR C BW 0.9 0.85 30 4.5 Units +85 +125 +260 10 seconds maximum at temperature R Max 80 1.1 1.0 1.1 44 0.43 5.8 WWW . Microsemi .C OM CHARACTERISTICS Test conditions (unless otherwise noted): TA = 25oC, VR = 5 Volts °C °C °C µm A/W 10 0.5 nA Volts pF GHz 1. Antireflective coating is ¼ wavelength at 1430nm covering 1310 and 1550nm applications 2. Bandwidth is measured at –3dB electrical power (photocurrent drops to 71% of DC value) into a 50 Ohm load DIE GEOMETRY Part Number Active Area A, µm LX3051 80 Die Dimension, µm Y X 450 450 Pad Dimension, µm w v 75 75 Pad Pitch, p, µm 125 Die thickness, µm 152 ELECTRICALS Copyright 2002 Rev. 0.6a Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 LX3051 3.125 Gbps I N T E G R A T E D P R O D U C T S Coplanar InGaAs/InP PIN Photo Diode PRELIMINARY DATA SHEET ID @ VR=5.00V LX3051 BV over Temperature 48 47 46 45 44 43 42 41 40 1000.000 Min 100.000 BV (V) Id@5V (nA) BV (V) WWW . Microsemi .C OM CHARACTERISTIC CURVES Mean BV (V) Max MAX 10.000 AVG MIN 1.000 BV (V) 0.100 -40 -20 0 20 40 60 80 100 120 0 20 40 60 80 100 120 TEMP Temp ( C) LX3051 BW (Vr = 1 to 5V, 1550nm) LX3051 CV -1 Vr=-5V, BW=6.43GHz -2 Vr=-4V, BW=5.95GHz Vr=-3V, BW=5.56GHz -3 Vr=-2V, BW=4.41GHz C (pF) Relative S21(dB) 0 Vr=-1V, BW=3.83GHz -4 -5 0.E+00 1.E+09 2.E+09 3.E+09 4.E+09 5.E+09 6.E+09 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 C@85oC (pF) C@25oC (pF) 0 1 2 3 4 5 6 7 8 9 10 Frequency (Hz) V GRAPHS PRECAUTIONS FOR USE ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode. Copyright 2002 Rev. 0.6a Microsemi 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3