RoHS 25PT Series RoHS SEMICONDUCTOR Stansard SCRs, 25A Main Features 2 Symbol Value Unit I T(RMS) 25 A V DRM /V RRM 600 to 1600 V I GT 4 to 40 mA 1 2 1 3 2 3 TO-220AB (Non-lnsulated) TO-220AB (lnsulated) (25PTxxA) (25PTxxAI) A2 DESCRIPTION The 25PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. 2 (A2) A1 A2 G TO-263 (D2PAK) Using clip assembly technology, they provide a superior performance in surge current capabilities. (G)3 1(A1) (25PTxxH) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) IT(RMS) TO-263/TO-220AB TO-220AB insulated Average on-state current (180° conduction angle) IT(AV) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) ITSM I2t Value for fusing TEST CONDITIONS SYMBOL TO-263/TO-220AB VALUE UNIT 25 A 16 A Tc=100°C Tc=83°C Tc=100°C TO-220AB insulated Tc=83°C F =50 Hz t = 20 ms 300 F =60 Hz t = 16.7 ms 314 t p = 10 ms I2t A 450 A2s Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz T j = 125ºC 50 A/µs Peak gate current IGM T p = 20 µs T j = 125ºC 4 A Maximum gate power PGM T p =20 µs T j = 125ºC 10 W T j =125ºC 1 W T j =125ºC 600 to 1600 V Average gate power dissipation PG(AV) Repetitive peak off-state voltage VDRM Repetitive peak reverse voltage VRRM Storage temperature range Operating junction temperature range www.nellsemi.com Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 5 RoHS 25PT Series RoHS SEMICONDUCTOR ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) 25PTxxxx SYMBOL Unit TEST CONDITIONS D Min. 4 4 Max. 10 40 IGT V D = 12V, R L = 33Ω VGT V D = V DRM , R L = 3.3KΩ VGD mA Max. 1.3 V Min. 0.2 V T j = 125°C R GK = 220Ω - IH I T = 500mA, Gate open Max. 20 50 mA IL I G = 1.2× I GT Min. 40 90 mA V D = 67% V DRM , Gate open T j = 125°C Min. 500 V/µs VTM I T = 50A, t P = 380µs T j = 25°C Max. 1.6 V IDRM IRRM V D =V DRM , V R =V RRM T j = 25°C Max. 5 µA R GK = 220Ω T j = 125°C Max. 2 mA Vto Threshold Voltage T j = 125°C Max. 0.77 V Rd Dynamic Resistance T j = 125°C Max. 14 mΩ dV/dt THERMAL RESISTANCE Rth(j-c) Rth(j-a) VALUE Parameter SYMBOL D 2 PAK /TO-220AB 1.0 TO-220AB insulated 2.0 TO-263( D 2 PAK) 45 TO-220AB/TO-220AB insulated 60 UNIT °C/W Junction to case (DC) S = 1 cm 2 Junction to ambient °C/W S=Copper surface under tab PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY PACKAGE V 40 mA TO-220AB V V 40 mA D 2 PAK V V V 4~10 mA TO-220AB V V V 4~10 mA D 2 PAK 600 V 800 V 1000 V 1200 V 1600 V 25PTxxA/25PTxxAl V V V V 25PTxxH V V V V V V V 25PTxxA-D/25PTxxAl-D 25PTxxH-D ORDERING INFORMATION MARKING PACKAGE WEIGHT , BASE Q TY DELIVERY MODE 25PTxxA-y 25PTxxA-y TO-220AB 2.0g 50 Tube 25PTxxAI-y 25PTxxAI-y TO-220AB (insulated) 2.3g 50 Tube 25PTxxH-y 25PTxxH-y TO-263(D 2 PAK) 2.0g 50 Tube ORDERING TYPE Note: xx = voltage , y = sensitivity www.nellsemi.com Page 2 of 5 RoHS 25PT Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME - D 25 PT 06 Current 25 = 25A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V 16 = 1600V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) H = TO-263 (D 2 PAK) IGT Sensitivity D = 4~10mA Blank = 4~40mA Fig.1 Maximum average power dissipation versus average on-state current. P (W) 22 20 18 16 14 12 10 8 6 4 2 0 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 360° I T(AV) (A) 0 2 4 8 6 10 α 12 14 16 Fig.3 Average and DC on-state current versus ambient temperature. 3.5 Fig.2 Average and DC on-state current versus case temperature. lT(AV)(A) D²PAK TO-220AB D.C. TO-220ABins α=180° T case (°C) 25 0 50 100 75 125 Fig.4 Relative variation of thermal impedance versus pulse duration.(D²PAK, and TO-220AB) K=[Zth/Rth] lT(AV)(A) 1.00 D.C. α=180° 3.0 Zth(j-c) 2.5 2.0 0.10 D²PAK TO-220AB 1.5 1.0 Zth(j-a) TO-220ABins 0.5 T amb (°C) 0.0 0 25 www.nellsemi.com 50 75 100 125 0.01 1E-3 Page 3 of 5 t P (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 RoHS 25PT Series RoHS SEMICONDUCTOR Fig.6 Relative variation of gate trigger holding, and latching currents versus junction temperature. Fig.5 Relative variation of thermal impedance versus pulse duration. (TO-220AB ins) K=[Zth/Rth] l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] 2.5 1.0E+01 2.0 Zth(j-c) 1.5 l GT 1.0E-01 IH & IL 1.0 Zth(j-a) 0.5 t P (s) 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.0 -40 ITSM (A) 20 40 60 Non repetitive T j initial = 25 ° C 200 120 140 T j initial = 25°C 1000 One cycle 100 l TSM Tp=10ms 250 80 ITSM (A), l²t (A²s) 2000 300 0 -20 Fig.8 Non-repetitive surge peak on-state current , and corresponding values of l 2 t Fig.7 Surge peak on-state current versus number of cycles. 350 T j (°C) l 2t 150 dl/dt limitattion 100 Repetitive T case = 83 °C 50 Number of cycles 0 10 1 Sinusoidal pulse width t p (ms) 100 100 0.01 1000 Fig.9 On-state characteristics (maximum values) 10.00 1.00 Fig.10 Thermal resistance junction to ambient versus copper surface under tab (D 2 PAK) ITM (A) 1000 0.10 80 Rth (j-a)(°C/W) Epoxy printed circuit board FR4, copper thickness = 35 µm 70 60 100 50 40 30 10 T j max.: V to = 0.77V R d = 14m V TM (V) 1 0.0 0.5 1.0 www.nellsemi.com 1.5 2.0 2.5 3.0 3.5 20 10 0 S(cm 2 ) 0 4.0 Page 4 of 5 4 8 12 16 20 24 28 32 36 40 RoHS 25PT Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) RoHS 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) 2.79 (0.110) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 5 of 5