27-March'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit:millimeters (inches) 24 +/- 0.3 FEATURES Internally matched to 50 ohm system High output power P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz High power gain GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz High power added efficiency P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz Low Distortion[Item-51] IM3=-42 dBc(MIN.)@Po=34.5dBm S.C.L. 0.6 +/- 0.15 2 (1) R1.2 8 (3) 2 1 (2) 7 . APPLICATION 20.4 +/- 0.2 5.9 - 6.4 GHz band amplifiers . 0 0 IG 1 4 RECOMMENDED BIAS CONDITIONS (1) GATE (2) SOURCE(FIANGE) (3) DRAIN M . Refer to Bias Procedure . GF-38 . 4 VDS = 10V ID = 8 A Rg=25 ohm 2 16.7 QUALITY GRADE Symbol Parameter Ratings Unit Gate to drain voltage -15 V VGSO Gate to source voltage -15 V 30 A Reverse gate current -60 mA IGF Forward gate current 126 mA PT Total power dissipation 125 W Tch Channel temperature 175 deg.C Tstg Storage temperature -65/+175 deg.C 4 ID M Drain current IGR 3 1 VGDO 4 . ABSOLUTE MAXIMUM RATINGS *1 : Tc=25 Deg.C I ABSOLUTE MAXIMUM RATINGS Symbol Gm VGS(off) Typ Max VDS = 3V , VGS = 0V - 24 - A Transconductance VDS = 3V , ID = 8A - 8 - S Gate to source cut-off voltage VDS = 3V , ID = 160mA - - -5 V 44.5 45 - dBm 8 9 - dB - 33 - % -42 -45 - dBc - - 1.0 Deg.C/W GLP PAE Power added efficiency IM3 3rd order IM distortion Rth(ch-c) Unit Min Saturated drain current Output power at 1dB gain compression Linear power gain P1dB Limits Test conditions Thermal resistance *1 I IDSS Parameter VDS = 10V , ID = 8A , f = 5.9 - 6.4 GHz Delta Vf method *1 : Channel to case N *2 : Item-51,2tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz, Delta f=10MHz MITSUBISHI ELECTRIC 27-March'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25 Deg.C) P1dB 46 13 45 12 44 11 GLP 43 10 42 9 41 8 5.8 5.9 50 VDS=10(V) IDS=8(A) f=6.15(GHz) 6.0 6.1 6.2 6.3 6.4 45 Po 40 40 30 35 20 PAE 30 10 25 6.5 0 20 25 FERQUENCY (GHz) 30 35 40 45 INPUTPOWER Pin(dBm) Po IM3 vs. Pin VDS=10(V) IDS=8(A) f=6.4(GHz) Delta f=10(MHz) 42 40 38 0 Po -10 -20 36 34 -30 32 30 28 -40 26 IM3 24 -50 22 IM3(dBc) OUTPUT POWER Po (dBm S.C.L.) 44 -60 20 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin(dBm S.C.L.) S PARAMETERS (Ta=25 Deg.C , VDS=10V , IDS=8A) S Parameters (TYP.) f S11 S21 S12 S22 (GHz) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) 5.90 0.61 159 2.957 -44 0.04 -117 0.21 160 6.00 0.55 138 3.071 -62 0.05 -134 0.22 134 6.10 0.48 115 3.119 -81 0.06 -152 0.25 112 6.20 0.41 92 3.148 -100 0.07 -167 0.26 91 6.30 0.34 65 3.143 -118 0.08 175 0.26 73 6.40 0.28 36 3.122 -137 0.09 160 0.25 55 MITSUBISHI ELECTRIC POWER ADDED EFFICIECY PAE (%) 14 VDS=10(V) IDS=8(A) OUTPUT POWER Po(dBm) 47 Po , PAE vs. Pin 50 LINEAR POWER GAIN GLP(dB) OUTPUT POWER P1dB (dBm) P1dB ,GLP vs. f