MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS48B2122
2.11 - 2.17 GHz BAND 60W GaAs FET
'(6&5,37,21
OUTLINE
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The MGFS48B2122 is a 60W push-pull type GaAs Power FET
especially designed for use in 2.11 - 2.17GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
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 Push-pull configuration
 High output power
Pout = 60W (TYP.) @ f=2.17 GHz
 High power gain
GLP = 12 dB (TYP.) @ f=2.17GHz
 High power added efficiency
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P.A.E. = 48 % (TYP.) @ f=2.17GHz
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2.11-2.17GHz band power amplifier for W-CDMA Base Station
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48$/,7<*5$'(
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$33/,&$7,21
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5(&200(1'('%,$6&21',7,216
VDS = 12 (V)
ID = 2.0 (A)
RG=20 (ohm) for each gate
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$%62/87(0$;,0805$7,1*6
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
VGDO
VGSO
PT *1
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Total power dissipation
Channel temperature
Storage temperature
Ratings
-20
-10
125
175
-65 / +175
Unit
V
V
W
deg.C
deg.C
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
*1 : Tc=25deg.C
material or (3)prevention against any malfunction or mishap.
(/(&75,&$/&+$5$&7(5,67,&6 (Ta=25deg.C)
Symbol
Parameter
Test conditions
Min.
GLP
Linear power gain
Pout
Output power
ID(RF)
Drain current
P.A.E.
Power added efficiency
Rth (ch-c)
Thermal resistance
Pin=22dBm
VDS=12V, ID(RF off)=2.0A
Pin=39dBm
f=2.17GHz
Channel to Case
MITSUBISHI
ELECTRIC
Limits
Typ.
Max.
Unit
11
12
-
dB
47
48
-
dBm
-
11
15
A
-
48
-
%
-
1
1.2
deg.C/W
June-'04
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS48B2122
2.11 - 2.17 GHz BAND 60W GaAs FET
MITSUBISHI
ELECTRIC
June-'04