Order this document by MGY25N120/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies. • • • • IGBT IN TO–264 25 A @ 90°C 38 A @ 25°C 1200 VOLTS SHORT CIRCUIT RATED Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 216 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Robust High Voltage Termination C G G C E CASE 340G–02 STYLE 5 TO–264 E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 1200 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 1200 Vdc Gate–Emitter Voltage — Continuous VGE ±20 Vdc Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) IC25 IC90 ICM 38 25 76 Adc PD 212 1.69 Watts W/°C TJ, Tstg – 55 to 150 °C tsc 10 ms RθJC RθJA 0.6 35 °C/W 260 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw TL Apk 10 lbfSin (1.13 NSm) (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 IGBT Motorola Motorola, Inc. 1997 Device Data 1 MGY25N120 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1200 — — 960 — — mV/°C 25 — — Vdc — — — — 100 2500 — — 250 — — — 2.37 2.15 2.98 3.24 — 4.19 4.0 — 6.0 10 8.0 — mV/°C gfe — 12 — Mhos pF OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) V(BR)CES Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS Zero Gate Voltage Collector Current (VCE = 1200 Vdc, VGE = 0 Vdc) (VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES Vdc µAdc nAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 12.5 Adc) (VGE = 15 Vdc, IC = 12.5 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 25 Adc) VCE(on) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) Forward Transconductance (VCE = 10 Vdc, IC = 25 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VCE = 25 Vdc, Vdc VGE = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance Cies — 2795 — Coes — 181 — Cres — 45 — td(on) — 91 — tr — 124 — td(off) — 196 — tf — 310 — Eoff — 2.44 4.69 mJ td(on) — 88 — ns tr — 126 — td(off) — 236 — tf — 640 — Eoff — 5.40 — mJ QT — 97 — nC Q1 — 31 — Q2 — 40 — — 13 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 720 Vdc, Vd IC = 25 Ad Adc, VGE = 15 Vdc, Vd L = 300 mH RG = 20 Ω) Energy losses include “tail” Turn–Off Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VCC = 720 Vdc, Vd IC = 25 Ad Adc, Vd L = 300 mH VGE = 15 Vdc, RG = 20 Ω, TJ = 125°C) 125 C) Energy losses include “tail” Turn–Off Switching Loss Gate Charge (VCC = 720 Vdc, Vdc IC = 25 Adc Adc, VGE = 15 Vdc) ns INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25″ from package to emitter bond pad) LE nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2 Motorola IGBT Device Data MGY25N120 TYPICAL ELECTRICAL CHARACTERISTICS 75 75 VGE = 20 V 15 V 60 45 12.5 V 30 10 V 15 0 0 2 1 4 3 6 5 7 15 V 45 12.5 V 30 10 V 15 0 8 0 50 40 30 20 25°C 10 6 8 12 10 14 16 VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) VCE = 10 V 250 µs PULSE WIDTH 4 IC = 20 A 3 15 A 10 A 2 1 – 50 0 C, CAPACITANCE (pF) VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) TJ = 25°C VGE = 0 V Coes Cres 5 10 15 20 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Variation Motorola IGBT Device Data 100 150 Figure 4. Collector–to–Emitter Saturation Voltage versus Junction Temperature 1000 0 50 TJ, JUNCTION TEMPERATURE (°C) 10000 10 8 7 VGE = 15 V 250 µs PULSE WIDTH Figure 3. Transfer Characteristics 100 6 5 4 VGE, GATE–TO–EMITTER VOLTAGE (VOLTS) Cies 4 3 Figure 2. Output Characteristics 70 0 2 1 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics TJ = 125°C 17.5 V 60 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) 60 VGE = 20 V TJ = 125°C 17.5 V IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) TJ = 25°C 25 16 QT 14 12 10 Q1 Q2 8 6 TJ = 25°C IC = 25 A 4 2 0 0 10 20 30 40 50 60 70 Qg, TOTAL GATE CHARGE (nC) Figure 6. Gate–to–Emitter Voltage versus Total Charge 3 MGY25N120 7 IC = 25 A Eoff , TURN–OFF ENERGY LOSSES (mJ) Eoff , TURN–OFF ENERGY LOSSES (mJ) 6 5.5 VCC = 720 V VGE = 15 V TJ = 125°C IC = 25 A 5 4.5 4 15 A 3.5 3 10 A 2.5 2 10 20 30 40 VCC = 720 V VGE = 15 V RG = 20 Ω 6 5 IC = 25 A 4 15 A 3 2 10 A 1 0 50 25 75 50 100 125 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (°C) Figure 7. Turn–Off Losses versus Gate Resistance Figure 8. Turn–Off Losses versus Case Temperature 150 IC , COLLECTOR CURRENT (AMPS) 100 10 1 VGE = 15 V RGE = 20 Ω TJ = 125°C 0.1 1 10 100 1000 10,000 VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS) Figure 9. Reverse Biased Safe Operating Area 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 1.0E+00 1.0E+01 t, TIME (s) Figure 10. Thermal Response 4 Motorola IGBT Device Data MGY25N120 PACKAGE DIMENSIONS 0.25 (0.010) M T B M –Q– –B– –T– C E U N A 1 R 2 L 3 –Y– P K W F 2 PL G J H D 3 PL 0.25 (0.010) M Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 S STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER CASE 340G–02 TO–264 ISSUE F Motorola reserves the right to make changes without further notice to any products herein. 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