NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature IB=0 IC(RMS) @ TC < 25° Derate above 25°C Value MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 60 80 60 80 Unit V V 5.0 V 8.0 A 0.1 A 90 0.515 W W/°C -65 to +200 °C Value Unit 1.94 °C/W THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 29/10/2012 COMSET SEMICONDUCTORS 1|3 NPN MJ1000 – MJ1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICEO IEBO ICER VCE(SAT) Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current IC=100 mA, IB=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VBE=5.0 V, IC=0 VCB=60 V, RBE=1.0 kΩ VCB=80 V R =1.0 kΩ Collector-Emitter Leakage BE VCB=60 V Current RBE=1.0 kΩ TC=150°C VCB=80 V RBE=1.0 kΩ TC=150°C IC=3.0 A, IB=2 mA Collector-Emitter saturation Voltage (*) IC=8.0 A, IB=40 mA VF VBE Forward Voltage (pulse method) Base-Emitter Voltage (*) IF=3 A IC=3.0 A, VCE=3.0 V VCE=3.0 V, IC=3.0 A HFE DC Current Gain (*) VCE=3.0 V, IC=4.0 A Min Typ Max Unit MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 60 80 - - - V 500 µA - - 2.0 mA MJ1000 - 1.0 MJ1001 - - MJ1000 - - mA 5.0 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 MJ1000 MJ1001 - - - - 2.0 - - 4.0 - 1.8 - V - - 2.5 V 1000 - - V 750 - - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 29/10/2012 COMSET SEMICONDUCTORS 2|3 NPN MJ1000 – MJ1001 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 29/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3