ONSEMI MMSD701T1G

MMSD301T1G,
MMSD701T1G
SOD-- 123 Schottky
Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin--offs of our
popular MMBD301LT1, and MMBD701LT1 SOT--23 devices. They
are designed for high--efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital
applications.
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1
Cathode
Features




2
Anode
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
SOD--123
CASE 425
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
30
70
Vdc
Forward Current (DC) Continous
IF
200
mA
Forward Power Dissipation
TA = 25C
PF
225
mW
Junction Temperature
TJ
-- 55 to +125
C
Storage Temperature Range
Tstg
-- 55 to +150
C
Reverse Voltage
MMSD301T1
MMSD701T1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
1
XXX MG
G
xx
= Specific Device Code
XT = MMSD301T1
XH = MMSD701T1
M
= Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMSD301T1G
SOD--123
(Pb--Free)
3000 Tape & Reel
MMSD701T1G
SOD--123
(Pb--Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 5
1
Publication Order Number:
MMSD301T1/D
MMSD301T1G, MMSD701T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
Diode Capacitance
(VR = 0 V, f = 1.0 MHz
Symbol
CT
MMSD301T1
MMSD701T1
Total Capacitance
(VR = 15 V, f = 1.0 MHz)
(VR = 20 V, f = 1.0 MHz)
MMSD301T1
MMSD701T1
Reverse Leakage
(VR = 25 V)
(VR = 35 V)
MMSD301T1
MMSD701T1
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
V(BR)R
MMSD301T1
MMSD701T1
CT
IR
VF
MMSD301T1
MMSD701T1
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2
Min
Typ
Max
30
70
---
---
---
0.9
0.5
1.5
1.0
---
0.9
0.5
1.5
1.0
---
13
9.0
200
200
-----
0.38
0.52
0.42
0.7
0.45
0.6
0.5
1.0
Unit
V
pF
pF
nAdc
nAdc
Vdc
MMSD301T1G, MMSD701T1G
TYPICAL CHARACTERISTICS
MMSD301T1
500
MMSD301T1
2.4
τ , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
2.8
f = 1.0 MHz
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
21
18
VR, REVERSE VOLTAGE (VOLTS)
24
27
MMSD301T1
400
KRAKAUER METHOD
300
200
100
0
30
0
Figure 1. Total Capacitance
100
TA = 100C
TA = 75C
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
80
90
100
MMSD301T1
TA = -- 40C
10
TA = 85C
1.0
TA = 25C
0.01
0.001
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( m A)
MMSD301T1
0.1
30
50
70
40
60
IF, FORWARD CURRENT (mA)
20
Figure 2. Minority Carrier Lifetime
10
1.0
10
24
0.1
30
TA = 25C
0.2
Figure 3. Reverse Leakage
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
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3
1.0
1.2
MMSD301T1G, MMSD701T1G
TYPICAL CHARACTERISTICS
MMSD701T1
500
CT, TOTAL CAPACITANCE (pF)
MMSD701T1
1.6
τ , MINORITY CARRIER LIFETIME (ps)
2.0
f = 1.0 MHz
1.2
0.8
0.4
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
MMSD701T1
400
KRAKAUER METHOD
300
200
100
0
50
0
10
Figure 5. Total Capacitance
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( m A)
MMSD701T1
TA = 100C
TA = 75C
0.1
80
90
100
Figure 6. Minority Carrier Lifetime
10
1.0
30
50
70
40
60
IF, FORWARD CURRENT (mA)
20
MMSD701T1
10
TA = 85C
TA = -- 40C
1.0
0.01
0.001
TA = 25C
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
0.1
50
Figure 7. Reverse Leakage
TA = 25C
0.2
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Forward Voltage
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4
1.6
2.0
MMSD301T1G, MMSD701T1G
PACKAGE DIMENSIONS
SOD--123
CASE 425--04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
DIM MIN
NOM
MAX
A
0.94
1.17
1.35
A1
0.00
0.05
0.10
b
0.51
0.61
0.71
----------c
0.15
D
1.40
1.60
1.80
E
2.54
2.69
2.84
HE
3.56
3.68
3.86
----------L
0.25
-----10 
θ
0
STYLE 1:
PIN 1. CATHODE
2. ANODE
E
HE
2
θ
L
b
MIN
0.037
0.000
0.020
-----0.055
0.100
0.140
0.010
0
INCHES
NOM
0.046
0.002
0.024
-----0.063
0.106
0.145
-----------
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
-----10 
C
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
SCALE 10:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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5
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MMSD301T1/D