MP6X3 Transistors Medium Power Transistor (60V, 3A) MP6X3 zDimensions (Unit : mm) zApplication Low frequency amplifier High speed switching MPT6 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Contain two 2SC5824-dies in a package. (6) (5) (4) (1) (2) (3) zStructure NPN silicon epitaxial planar transistor zPackaging specifications Package Type zInner circuit Taping (6) Code (5) (4) TR Basic ordering unit (pieces) 1000 MP6X3 <Tr2> <Tr1> (1) (2) (1) EMITTER<Tr1> (2) BASE<Tr1> (3) COLLECTOR<Tr2> (4) EMITTER<Tr2> (5) BASE<Tr2> (6) COLLECTOR<Tr1> (3) zAbsolute maximum ratings (Ta=25°C) <Tr1, Tr2> Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Continuous IC 3 A Pulsed ICP ∗1 6 A ∗2 2.0 W / TOTAL PD 1.4 W / ELEMENT Tj 150 °C Tstg −55 to +150 °C Parameter Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Rev.A 1/3 MP6X3 Transistors zElectrical characteristics (Ta=25°C) <Tr1, Tr2> Symbol Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO 60 − − V IC= 1mA Collector-base breakdown voltage BVCBO 60 − − V IC= 100µA Emitter-base breakdown voltage BVEBO 6 − − V IE= 100µA Collector cut off current ICBO − − 1.0 µA VCB= 40V Emitter cut off current IEBO − − 1.0 µA VEB= 4V ∗1 VCE(sat) − 200 500 mV IC/IB= 2.0A/200mA hFE 120 − 390 − − 200 − MHz − 20 − pF VCB= 10V, IE=0A, f=1MHz IC= 3V IB1= 300mA IB2= −300mA VCC ∼ − −25V Parameter Collector-emitter saturation voltage DC current gain fT Transition frequency ∗1 Cob Collector output capacitance Turn-on time ton ∗2 − 50 − ns Storage time tstg ∗2 − 150 − ns ∗2 − 30 − ns tf Fall time IB=9mA IB=7mA IB=6mA 1.0 COLLECTOR CURRENT ： IC(A) VCE=2V Ta=125°C 1 Ta=100°C Ta= −40°C Ta=25°C 0.1 1000 Ta=25°C 0.9 IB=8mA 0.8 IB=10mA 0.7 VCE=5V IB=5mA IB=4mA 0.6 IB=3mA 0.5 0.4 IB=2mA 0.3 0.2 DC CURRENT GAIN : hFE 10 COLLECTOR CURRENT : IC (A) VCE= 10V, IE= −100mA, f=10MHz Pulsed See switching time test circuit zElectrical characteristics curves 100 0 0.5 1 1.5 2 Fig.1 Ground emitter propagation characteristics Ta=125°C 10 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) 10 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) Ta=25°C Ta=100°C 1 0.001 1 0.001 10 VCE=2V Ta= −40°C 10 Fig.3 DC current gain vs. collector Fig.2 Grounded emitter output characteristics current 1000 100 VCE=2V Ta=25℃ 0.0 0.5 1.0 1.5 2.0 COLLECTOR TO EMITTER VOLTAGE：VCE(V) BASE TO EMITTER VOLTAGE : VBE (V) VCE=3V IB=1mA 0.1 0.0 0.01 DC CURRENT GAIN : hFE VCE= 2V, IC= 100mA IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) ∗1 ∗2 Conditions 1 0.1 0.01 0.001 IC/IB=20/1 IC/IB=10/1 0.01 0.1 1 1 Ta=125°C Ta=100°C 0.1 Ta=25°C Ta= −40°C 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. Collector Current Rev.A 2/3 MP6X3 10 TRANSITION FREQUENCY : FT (MHz) 1000 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) IC/IB=10/1 Ta= −40°C Ta=25°C 1 Ta=125°C Ta=100°C 0.1 0.001 0.01 0.1 1 100 10 1 −0.001 10 −0.01 −0.1 −1 −10 100 Ta=25°C f=1MHz 10 1 0.1 1 10 100 EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Transition frequency Fig.9 Collector output capacitance tstg 100 ton tf 10 0.01 0.1 1 10 100ms Ta=25℃ 1 0.1 1ms 1 DC 0.1 Ta=25℃ Single Pulse 0.01 0.01 0.001 0.1 10 1000 COLLECTOR CURRENT : IC (A) Pulse width : Pw(s) Fig.10 Switching Time 10ms 10 10 COLLECTOR CURRENT : IC (A) Ta=25°C VCC=25V IC/IB=10/1 Normalized Transient Thermal Resistance : r(t) COLLECTOR CURRENT : IC (A) 1000 SWITCHING TIME (ns) Ta=25°C VCE=10V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Transistors Fig.11 Normalized thermal resistance (Element) 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Safe operating area (Tr1&Tr2) zSwitching characteristics measurement circuits RL=8.3Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% ton tstg tf Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0