Order this document by MRF1002MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 2.0 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 20 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous IC 250 mAdc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 7.0 40 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 25 °C/W CASE 332–04, STYLE 1 MRF1002MA THERMAL CHARACTERISTICS CASE 332A–03, STYLE 1 MRF1002MB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 — — Vdc Collector–Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 — — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 0.5 mAdc hFE 10 — 100 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF1002MA MRF1002MB 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 2.5 5.0 pF Common–Base Amplifier Power Gain (VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) GPB 10 12 — dB Collector Efficiency (VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz) η 40 45 — dB Load Mismatch (VCC = 35 Vdc, Pout = 2.0 W, f = 1090 MHz, VSWR = 10:1 All Phase Angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 35 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%) No Degradation in Power Output + 35 Vdc – + C2 C3 C4 L1 Z2 Z5 Z9 Z12 DUT RF INPUT C1 Z1 Z4 Z3 Z7 Z6 Z8 Z11 Z10 Z14 RF OUTPUT Z13 C1, C3 — 220 pF Chip Capacitor, 100 mil ATC C2 — 20 µF/50 Vdc Electrolytic C4 — 0.1 µF Erie Redcap L1, L2 — 2 Turns #18 AWG, 1/8″ ID Z1–Z14 — Distributed Microstrip Elements, See Photomaster Board Material — 0.031″ Thick Teflon–Fiberglass, Board Material — εr = 2.56 Figure 1. 1090 MHz Test Circuit MRF1002MA MRF1002MB 2 MOTOROLA RF DEVICE DATA 3 3 2.5 1.09 GHz 2 1.215 GHz 1.5 VCC = 35 V tP = 10 µs D = 1% 1 0.5 0 40 80 120 Pin, INPUT POWER (mW pk) 160 Pout , OUTPUT POWER (W pk) Pout , OUTPUT POWER (W pk) f = 0.96 GHz 160 mW pk 2 120 mW pk 1.5 1 VCC = 35 V tP = 10 µs D = 1% 80 mW pk 0.5 200 960 Figure 2. Output Power versus Input Power 1090 f, FREQUENCY (MHz) 1215 Figure 3. Output Power versus Frequency 2 15 Pin = 200 mW pk tP = 10 µs D = 1% f = 1090 MHz 1.5 Pout = 2 W pk VCC = 35 V tP = 10 µs D = 1% 125 mW pk 14 G PB , POWER GAIN (dB) Pout , OUTPUT POWER (W pk) Pin = 200 mW pk 2.5 100 mW pk 1 75 mW pk 0.5 13 12 11 0 10 5 0 10 15 20 25 30 VCC, SUPPLY VOLTAGE (V) 35 40 Figure 4. Output Power versus Supply Voltage 960 1090 f, FREQUENCY (MHz) 1215 Figure 5. Power Gain versus Frequency + j50 + j25 + j100 Zin + j150 1215 1090 + j10 + j250 f = 960 MHz VCC = 35 Vdc, tP = 10 µs, D = 1.0% + j500 0 10 25 50 100 150 250 500 ZOL* (Pin = 0.2 W pk) f = 960 MHz – j10 960 1090 – j500 1215 1090 – j250 1215 ZOL* (Pout = 2 W pk) – j100 – j25 COORDINATES IN OHMS – j150 f MHz Zin Ohms ZOL* Ohms Pout = 2.0 W pk ZOL* Ohms Pin = 0.2 W pk 960 1090 1215 15.5 + j16.5 15 + j20 14 + j27 20 + j32.5 25 + j34 33.5 + j42.5 25 + j21 31 + j26 37 + j32.5 ZOL* = Conjugate of the optimum load impedance into which ZOL* = the device output operates at a given output power, ZOL* = voltage, and frequency. – j50 Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF1002MA MRF1002MB 3 Pout = 2 W pk VCC = 35 V tP = 1 ms D = 10% f = 1090 MHz Figure 7. Typical Long Pulse Performance MRF1002MA MRF1002MB 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS L NOTES: 1. DIMENSION K APPLIES TWO PLACES. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1973. M 4 K 1 D 3 DIM A B C D E F H J K L M N U 2 A N J H F –T– C U SEATING PLANE 8–32 UNC 2A STYLE 1: PIN 1. 2. 3. 4. E –B– 0.76 (0.030) M T B MILLIMETERS MIN MAX 6.86 7.62 6.10 6.60 16.26 16.76 4.95 5.21 1.40 1.65 2.67 4.32 1.40 1.65 0.08 0.18 15.24 ––– 2.41 2.67 45 _NOM 4.97 6.22 2.92 3.68 INCHES MIN MAX 0.270 0.300 0.240 0.260 0.640 0.660 0.195 0.205 0.055 0.065 0.105 0.170 0.055 0.065 0.003 0.007 0.600 ––– 0.095 0.105 45 _NOM 0.180 0.245 0.115 0.145 BASE EMITTER BASE COLLECTOR M CASE 332–04 ISSUE D MRF1002MA F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 INCHES 1 K D 3 2 H SEATING PLANE A J C STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS DIM MIN MAX MIN MAX A 0.270 0.290 6.86 7.36 C 0.115 0.135 2.93 3.42 D 0.195 0.205 4.96 5.20 F 0.095 0.105 2.42 2.66 H 0.050 0.070 1.27 1.77 J 0.003 0.007 0.08 0.17 K 0.600 ––– 15.24 ––– BASE EMITTER BASE COLLECTOR CASE 332A–03 ISSUE D MRF1002MB MOTOROLA RF DEVICE DATA MRF1002MA MRF1002MB 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF1002MA MRF1002MB 6 ◊ *MRF1002MA/D* MRF1002MA/D MOTOROLA RF DEVICE DATA