MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 18 Watts Avg. Power Gain — 13.0 dB Efficiency — 23% ACPR — - 51 dB IM3 — - 36.5 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19085R3,MRF19085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19085SR3, MRF19085LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 273 1.56 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.79 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc) VGS(Q) 2.5 3.5 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.210 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 6 — S Crss — 3.6 — pF OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Gps 12 13 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) η 21 23 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz) IMD — - 36.5 - 35 dBc Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz) ACPR — - 51 - 48 dBc IRL — - 12 -9 dB Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 850 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps — 13 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) η — 36 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL — - 12 — dB P1dB — 90 — W Freescale Semiconductor, Inc... FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz) MOTOROLA RF DEVICE DATA MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VGG R3 R1 VDD B1 + R2 + C5 C4 C3 C2 C7 Z4 RF INPUT Z1 Z2 Freescale Semiconductor, Inc... C8 + C9 C10 + C11 C12 Z9 Z3 Z5 C1 L1 Z6 Z7 RF OUTPUT Z8 C6 DUT Figure 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Schematic Table 1. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead 2743019447 Fair Rite C1 51 pF Chip Capacitor 100B510JCA500X ATC C2, C7 5.1 pF Chip Capacitors 100B5R1JCA500X ATC C3, C9 1000 pF Chip Capacitors 100B102JCA500X ATC C4, C10 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C5 0.1 µF Tantalum Surface Mount Capacitor T491C105M050 Kemet C6 10 pF Chip Capacitor 100B100JCA500X ATC C8 10 µF Tantalum Surface Mount Capacitor T495X106K035AS4394 Kemet C11, C12 22 µF Tantalum Surface Mount Capacitors T491X226K035AS4394 Kemet L1 1 Turn, 20 AWG, 0.100″ ID N1, N2 Type N Flange Mounts R1 1.0 kΩ, 1/8 W Chip Resistor R2 220 kΩ, 1/8 W Chip Resistor R3 10 Ω, 1/8 W Chip Resistor Z1 Microstrip 0.750″ x 0.0840″ Z2 Microstrip 1.090″ x 0.0840″ Z3 Microstrip 0.400″ x 1.400″ Z4 Microstrip 0.520″ x 0.050″ Z5 Microstrip 0.540″ x 1.133″ Z6 Microstrip 0.400″ x 0.140″ Z7 Microstrip 0.555″ x 0.0840″ Z8 Microstrip 0.720″ x 0.0840″ Z9 Microstrip 0.560″ x 0.070″ Board 0.030″ Glass Teflon GX-0300-55-22, εr = 2.55 Keene PCB Etched Circuit Boards MRF19085 Rev. 4 CMR Motorola 3052-1648-10 Omni Spectra MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. C8 C2 C7 R1 B1 C5 C1 C4 R3 C9 C10 C3 CUT OUT AREA R2 L1 C11 C12 C6 Freescale Semiconductor, Inc... MRF19085 Rev.4 Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. f1 1.2288 MHz BW −10 −ACPR @ 30 kHz BW −30 +ACPR @ 30 kHz BW −40 −50 −60 −IM3 @ 1.2288 MHz BW −2.50 −1.25 0.00 1.25 2.50 3.75 5.00 25 −35 20 −42 IM3 15 −49 G ps 10 −56 η 5 −63 ACPR 0 −70 0.5 1 10 30 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS Avg.) N−CDMA Figure 4. 2-Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power VDD = 26 Vdc IDQ = 850 mA f1 = 1960 MHz 100 kHz Tone Spacing 40 −40 30 η 3rd Order −50 20 5th Order −60 10 −20 7th Order IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 50 η, DRAIN EFFICIENCY (%) −20 −30 −28 VDD = 26 Vdc, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) Figure 3. 2-Carrier N-CDMA Spectrum VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing −25 −30 IDQ = 550 mA −35 700 mA −40 −45 1150 mA 1000 mA −50 850 mA 10 Figure 6. Third Order Intermodulation Distortion versus Output Power and IDQ 0 22 IRL −10 −20 VDD = 26 V Pout = 18 W Avg. IDQ = 850 mA −30 IM3 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability) (CCDF) 16 14 −40 ACPR G ps 12 1930 100 Figure 5. Intermodulation Distortion Products versus Output Power η 18 10 Pout, OUTPUT POWER (WATTS) PEP 24 20 4 Pout, OUTPUT POWER (WATTS) PEP 1940 1950 1960 1970 1980 −50 −60 1990 14 54 G ps 12 VDD = 26 V IDQ = 850 mA f = 1960 MHz 10 47 40 8 33 6 26 η 4 19 2 P in 0 2 10 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) Figure 7. 2-Carrier N-CDMA Broadband Performance Figure 8. CW Performance 12 5 100 140 MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com η, DRAIN EFFICIENCY (%) 4 −55 0 100 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) −3.75 −70 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... −70 −5.00 +IM3 @ 1.2288 MHz BW 30 P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) (dBc) −20 f2 1.2288 MHz BW IM3 (dBc), ACPR (dBc) 0 η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. −26 η 37 −28 IMD 36 −29 35 −30 34 −31 33 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 IDQ = 1150 mA 13.5 1000 mA 850 mA 13.0 700 mA 12.5 550 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 12.0 11.5 −32 28.0 4 10 VDD, DRAIN SUPPLY (V) 100 Pout, OUTPUT POWER (WATTS) Figure 9. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) Freescale Semiconductor, Inc... −27 14.0 Figure 10. Two-Tone Power Gain versus Output Power 40 −5 η 35 −10 IRL 30 −15 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 850 mA 100 kHz Tone Spacing 25 20 −20 −25 IMD 15 −30 Gps 10 1920 1930 1940 1950 1960 1970 1980 1990 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%) 38 IDQ = 850 mA f = 1960 MHz 100 kHz Tone Spacing G ps , POWER GAIN (dB) 39 IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −35 2000 f, FREQUENCY (MHz) Figure 11. Two-Tone Broadband Performance MOTOROLA RF DEVICE DATA MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... Zo = 5 Ω Zload f = 1990 MHz f = 1930 MHz f = 1990 MHz Zsource f = 1930 MHz VDD = 26 V, IDQ = 850 mA, Pout = 18 W Avg. f MHz Zsource Ω Zload Ω 1930 0.75 - j2.50 1.05 - j1.95 1960 0.70 - j2.40 1.10 - j1.85 1990 0.65 - j2.35 1.05 - j1.75 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Input and Output Impedance MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A M B M M bbb N Freescale Semiconductor, Inc... R (INSULATOR) M T A M B M ccc M T A S (LID) ccc H (LID) B M M T A M B M aaa M T A M (INSULATOR) B M M C F E A T A CASE 465 - 06 ISSUE F NI - 780 MRF19085R3, MRF19085LR3 SEATING PLANE (FLANGE) 4X U (FLANGE) 1 K 2X 2 B (FLANGE) D bbb M T A M B M N M R (LID) ccc M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M E A A (FLANGE) MOTOROLA RF DEVICE DATA MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H C 3 INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B DIM A B C D E F G H K M N Q R S aaa bbb ccc F T SEATING PLANE CASE 465A - 06 ISSUE F NI - 780S MRF19085SR3, MRF19085LSR3 MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 MOTOROLA RF DEVICE MRF19085/D DATA ◊ For More Information On This Product, 12 Go to: www.freescale.com