Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF9080 CASE 465A–06, STYLE 1 NI–780S MRF9080SR3, MRF9080LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.7 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2.0 — 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 8.0 — S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 73 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 2.9 — pF Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) P1dB 68 75 — W Common–Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Gps 17 18.5 20 dB Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) η1 47 52 — % Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) η2 — 55 — % Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz) IRL 9.5 12.5 — dB Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally input matched. (2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 2 MOTOROLA RF DEVICE DATA Figure 1. Broadband GSM 900 Test Circuit Schematic Table 1. Broadband GSM 900 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 4.7 pF Chip Capacitor, B Case 100B4R7BW ATC C2 2.7 pF Chip Capacitor, B Case 100B2R7BW ATC C3 1.5 pF Chip Capacitor, B Case 100B1R5BW ATC C4, C5, C9, C10, C12, C13 5.6 pF Chip Capacitors, B Case 100B5R6CW ATC C6, C16, C17 22 pF Chip Capacitors, B Case 100B220GW ATC C7, C18 10 µF, 35 V Tantalum Chip Capacitors 293D106X9035D2T Sprague–Vishay C8, C11 10 pF Chip Capacitors, B Case 100B100JW ATC C14 0.8 pF Chip Capacitor, B Case 100B0R8BW ATC C15 8.2 pF Chip Capacitor, B Case 100B8R2GW ATC R1, R2, R3 1.0 kΩ, ??? W Chip Resistors (0805) WB1, WB2 Beryllium Copper Wear Blocks 0.004″ x 0.210″ x 0.520″ Raw PCB Material 30 mil Glass Teflon, εr = 2.55 TLX8–0300 Taconic PCB Etched Circuit Board C–GY–00–001–02 Cibel MOTOROLA RF DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 3 CUT OUT AREA MRF9080 Figure 2. Broadband GSM 900 Test Circuit Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 4 MOTOROLA RF DEVICE DATA Figure 3. Broadband GSM 900 Optimized Demo Board Schematic Table 2. Broadband GSM 900 Optimized Demo Board Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1 4.7 pF Chip Capacitor, ACCU–P (0805) #08051J3R9CBT AVX C2 3.9 pF Chip Capacitor, ACCU–P (0805) #08051J3R9CBT AVX C3, C15 22 pF Chip Capacitors, ACCU–P (0805) #08051J221 AVX C4, C6 22 mF, 35 V Tantalum Chip Capacitors #T491X226K035AS4394 Kemet C5 1.0 mF Chip Capacitor, ACCU–P (0805) #08053G105ZATEA AVX C7, C8 5.6 pF Chip Capacitors, ACCU–P (0805) #08051J5R18CBT AVX C9 220 mF, 63 V Electrolytic Capacitor C10, C11 3.3 pF Chip Capacitors, ACCU–P (0805) #08051J8R2CBT AVX C12, C13 2.2 pF Chip Capacitors, ACCU–P (0805) #08051J2R2CBT AVX C14 4.7 pF Chip Capacitor #100B ATC P1 5.0 kΩ Potentiometer CMS Cermet Multi–turn #3224W Bourns R1 10 Ω, 1/8 W Chip Resistor (0805) R2 1.0 kΩ, 1/8 W Chip Resistor (0805) R3 1.2 kΩ, 1/8 W Chip Resistor (0805) R4 2.2 kΩ, 1/8 W Chip Resistor (0805) R5, R6 1.0 kΩ, 1/8 W Chip Resistors (0805) T1 Bipolar NPN Transistor, SOT–23 #BC847ALT1 ON Semiconductor U1 Voltage Regulator, Micro–8 #LP2951ACDM–5.0R2 ON Semiconductor RF Connectors, Type SMA #R125510001 Radial Substrate = Taconic RF35, Thickness 0.5 mm MOTOROLA RF DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 5 ! "# MRF9080 Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 6 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS (IN MOTOROLA BROADBAND GSM 900 OPTIMIZED DEMO BOARD) !4 15 15 15 3 !4 ) 3 +, 3 ° .% & '( * 3 5 ) 3 +, 3 ° Figure 5. Power Gain versus Output Power /0 /0 %1&1 1'!( . 3 3 !4 * 3 5 3 ° 7 7 7 . 6 6 6 6 6 6 $% & '( 6 . %11&1'( ° ° 3 !4 * 3 5 ) 3 +, .% & '( Figure 9. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 6 ° 3 !4 * 3 5 ) 3 +, 3 ° Figure 8. Output Power and Efficiency versus Input Power /0 %1&1 1'!( 7 )% &*& # '+,-( h Figure 7. Power Gain and Input Return Loss versus Frequency 7 . 3 .% & '( 7 " Figure 6. Power Gain versus Output Power "%1 1& 1"1'!( . %11&1'( 3 !4 h%1 1&& #1'2( !4 ° ° h ° ° . 3 !4 * 3 5 ) 3 +,- 6 6 6 6 6 6 6 h%1 1&& #1'2( /0 %1&1 1'!( /0 %1&1 1'!( * 3 5 6 $% & '( Figure 10. Output Power and Efficiency versus Input Power MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 7 :$ ) 3 +,) 3 +,: 3 Ω :"; ) 3 +,) 3 +,- 3 % * 3 5% . 3 f MHz ZOL* Ω Zin Ω 880 0.91 + j2.11 1.22 + j0.12 920 0.88 + j2.65 1.00 + j0.16 960 1.6 + j2.61 1.22 + j0.22 1000 2.45 + j3.38 1.14 + j0.41 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, bias current and frequency. .89 :"; <=0 4>08 ?=08! .=!8))0 ?8.<88 @=$% ./. /<8 =! !=$ 8))$4$84A6 /. +=.4>$@ 8.<B ./. +=.4>$@ 8.<B 8C$48 !8 80. Z in Z * OL Figure 11. Series Equivalent Input and Output Impedance MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 9 NOTES MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G Q ??? 2X 1 + + + &9 6 +& "& & #6+76 6 "" +& 9 ,6 6 &"&& 6 +& , +&& 6 '6( # + D& #6 3 B K 2 (FLANGE) D ??? + + + M R (INSULATOR) ??? N + + + 444 + + S (LID) 444 + + + === + + (LID) + (INSULATOR) + H C F E T A A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 61 6 6 6 6 6 6 6 6 6 6 6 6 6 6 61& 61& 61& MILLIMETERS MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 61 6 6 6 6 6 6 6 6 6 6 6 6 6 6 61& 61& 61& #"& 9 6 6 & 6 & (FLANGE) CASE 465–06 ISSUE F NI–780 MRF9080 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B &9 6 +& "& & #6+76 6 "" +& 9 ,6 6 &"&& 6 +& , +&& 6 '6( # + D& #6 (FLANGE) D ??? + + + N (LID) 444 M R + + + 444 + S (INSULATOR) ??? + + + + === + + (LID) + (INSULATOR) + H C 3 F E A T A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465A–06 ISSUE F NI–780S MRF9080SR3, MRF9080LSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 777 6 777 6 61& 61& 61& MILLIMETERS MIN MAX 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 777 6 777 6 61& 61& 61& #"& 9 6 6 & 6 & MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9080 MRF9080R3 MRF9080SR3◊MRF9080LSR3 12 MRF9080/D MOTOROLA RF DEVICE DATA