Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 17 dB Efficiency — 26% Adjacent Channel Power – 750 kHz: –45.0 dBc @ 30 kHz BW 1.98 MHz: –60.0 dBc @ 30 kHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters 880 MHz, 170 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 375D–04, STYLE 1 NI–1230 MRF9180 CASE 375E–03, STYLE 1 NI–1230S MRF9180S MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS –0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 388 2.22 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.45 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF9180 MRF9180S 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 6 — S Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 77 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.8 — pF Gps 16 17.5 — dB η 35 39 — % IMD — –31 –28 dBc IRL — –15 –9 dB Gps — 17.5 — dB η — 38.5 — % IMD — –31 — dBc IRL — –13 — dB P1dB — 170 — W Characteristic OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 700 mA, f1 = 880.0 MHz) (1) Each side of device measured separately. (2) Device measured in push–pull configuration. MRF9180 MRF9180S 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit Gps — 16.5 — dB η — 55 — % FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Drain Efficiency (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Output Mismatch Stress (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 700 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (2) Device measured in push–pull configuration. MOTOROLA RF DEVICE DATA MRF9180 MRF9180S 3 B1, B2, B5, B6 B3, B4 C1 C2, C3, C5, C6, C12, C14, C19, C20, C21, C22 C4, C9, C10, C15, C16 C7 C8 C11, C13 C17 C18 C23, C24, C26, C27 C25, C28 C29 Coax1, Coax2 Coax3, Coax4 L1, L2, L3 L4 R1, R2 Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 0.6–4.5 pF Variable Capacitor 47 pF Chip Capacitors, B Case 12 pF Chip Capacitors, B Case 0.8–9.1 pF Variable Capacitor 7.5 pF Chip Capacitor, B Case 10 µF, 35 V Tantalum Surface Mount Chip Capacitors 3.6 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 22 µF, 35 V Tantalum Surface Mount Chip Capacitors 220 µF, 50 V Electrolytic Capacitors 0.4–2.5 pF Variable Capacitor 25 Ω, Semi Rigid Coax, 70 mil OD, 1.05″ Long 50 Ω, Semi Rigid Coax, 85 mil OD, 1.05″ Long 18.5 nH Mini Spring Inductors, Coilcraft 12.5 nH Mini Spring Inductor, Coilcraft 510 Ω, 1/10 W Chip Resistors Z1 Z2 Z3 Z4, Z5, Z26, Z27 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z28 Z29 Board Material 0.420″ x 0.080″ Microstrip 0.190″ x 0.080″ Microstrip 0.097″ x 0.080″ Microstrip 2.170″ x 0.080″ Microstrip 0.075″ x 0.080″ Microstrip 0.088″ x 0.220″ Microstrip 0.088″ x 0.220″ Microstrip 0.460″ x 0.220″ Microstrip 0.685″ x 0.625″ Microstrip 0.055″ x 0.625″ Microstrip 0.055″ x 0.632″ Microstrip 0.685″ x 0.632″ Microstrip 0.732″ x 0.080″ Microstrip 0.060″ x 0.080″ Microstrip 0.230″ x 0.080″ Microstrip 0.460″ x 0.080″ Microstrip 30 mil Teflon, εr = 2.55, Copper Clad, 2 oz Cu Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9180 MRF9180S 4 MOTOROLA RF DEVICE DATA !" #$" Resistor Resistor CUT OUT AREA Figure 2. 880 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9180 MRF9180S 5 TYPICAL CHARACTERISTICS h % % % 8'% '9# #:3(;#	) < '9# !2:6=9> @ 46 '() @ + -,. 0 @ & /* ,0,1 -. % % % % % % % *" ", !!"-4. 23 *"+,""-4. *" , ! "-46. 23 h *" ,,1"-7. ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ & 23 *"+,""-4. & & & @ 46 / @ / % 5 & % % % % "& "& "& '()* +, -+ !. , Figure 5. Intermodulation Distortion versus Output Power @ 46 0 @ & / @ / @ 5 23 23*"+,""-4. *" , "! "-46. % "& % Figure 4. Power Gain versus Output Power % "& % % '()* +, -+ !. , @ 46 / @ / @ 5 % % ;4";4#; % % )?";4#; )?";4#; '()* +, -+ !. , Figure 6. Intermodulation Distortion Products versus Output Power MRF9180 MRF9180S 6 h 5 @ 46 0 @ & / @ '()* +, -+ !. 5 h*"",,1"-7. *" , "! "-46. Figure 3. Class AB Broadband Circuit Performance Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA 23 23 *"+,""-4. @ 46 0 @ & / @ / % 5 h % % h*"",,1"-7. *" , "! "-46. % '()* +, -+ !. , 23 23 *"+,""-4. @ 46 0 @ & / @ !B* =C')* !D96* :>=9> ;://=6 '4#3 )?;'(>? h % % 5 % % h*"",,1"-7. *"A, ","+," "-4. Figure 8. Power Gain, Efficiency and IMD versus Output Power '()* +, -+ !. 5 Figure 9. Power Gain, Efficiency and ACPR versus Output Power MOTOROLA RF DEVICE DATA MRF9180 MRF9180S 7 ' @ Ω / @ / @ C':4 3'(;6# / @ / @ @ * 0 @ × &* '() @ + , f MHz Zload Ω Zsource Ω 865 2.95 + j0.00 3.83 + j1.02 880 2.48 + j0.67 3.55 + j1.38 895 2.44 + j1.18 3.34+ j1.51 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. 92() :)6?=9> #)8';< #$=6# 94#; #3) % % Z source ()2() :)6?=9> #)8';< Z load Figure 10. Series Equivalent Input and Output Impedance MRF9180 MRF9180S 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9180 MRF9180S 9 NOTES MRF9180 MRF9180S 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X Q GGG A A ,!E 5 ,, ,!! ,,! , !, 15%5 5 ,!E 5 5 ,! ! ,!, 5 -5. +1 F, 15 5 ,,, , , ,! 5 -5. !, !,+5 G 4 B L 4X 1 2 3 4 B (FLANGE) 4X K D ::: 666 R (LID) 666 F H N (LID) S (INSULATOR) C E PIN 5 SEATING PLANE T M (INSULATOR) GGG A GGG INCHES MIN MAX 5 5 5 5 5 5 5 5 5 5 5 5 5"! 5 5 5 5 5"! 5 5 5 5 5 5 5 5 5 5 5", 5", 5", ! 1, E 5 5 5 5 5 CASE 375D–04 ISSUE C NI–1230 MRF9180 DIM A B C D E F G H K L M N Q R S aaa bbb ccc MILLIMETERS MIN MAX 5 5 5 5 5 5 5 5 5 5 5 5 5"! 5 5 5 5 5"! 5 5 5 5 5 5 5 5 5 5 5", 5", 5", , , !, A (FLANGE) 4X Z L ,!E 5 ,, ,!! ,,! , !, 15%5 5 ,!E 5 5 ,! ! ,!, 5 -5. +1 F, 15 B 1 2 4 3 4X K 666 B (FLANGE) 4X ::: R D (LID) F H 666 S (INSULATOR) N (LID) GGG C E PIN 5 M (INSULATOR) GGG MOTOROLA RF DEVICE DATA T SEATING PLANE CASE 375E–03 ISSUE C NI–1230S MRF9180S DIM A B C D E F H K L M N R S Z aaa bbb ccc INCHES MIN MAX 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5"! 5 5 5 5 5 5 5 5 5 5", 5", 5", ! 1, E 5 5 5 5 5 MILLIMETERS MIN MAX 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5"! 5 5 5 5 5 5 5 5 5 5", 5", 5", , , !, MRF9180 MRF9180S 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9180 MRF9180S 12 ◊ MRF9180/D MOTOROLA RF DEVICE DATA