FREESCALE MRFG35003M6T1_06

Freescale Semiconductor
Technical Data
Document Number: MRFG35003M6T1
Rev. 4, 1/2006
Replaced by MRFG35003N6T1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MRFG35003M6T1
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,
IDQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Symbol
Value
Unit
VDSS
8
Vdc
(2)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
22.7
0.15 (2)
W
W/°C
Gate- Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
24
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Channel Temperature (1)
Tch
175
°C
Operating Case Temperature Range
TC
- 20 to +85
°C
Symbol
Value
Unit
RθJC
6.6 (2)
°C/W
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35003M6T1
1
ARCHIVE INFORMATION
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
2.9
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
< 1.0
100
μAdc
Off State Drain Current
(VDS = 6 Vdc, VGS = - 1.9 Vdc)
IDSO
—
0.02
1.0
mAdc
Off State Current
(VDS = 20 Vdc, VGS = - 2.5 Vdc)
IDSX
—
1.0
15
mAdc
Gate- Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
- 1.2
- 1.0
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 6 Vdc, IDQ = 180 mA)
VGS(Q)
- 1.1
- 0.9
- 0.7
Vdc
Power Gain
(VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz)
Gps
8
9
—
dB
Output Power, 1 dB Compression Point
(VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz)
P1dB
—
3
—
W
hD
22
24
—
%
ACPR
—
- 42
- 38
dBc
Drain Efficiency
(VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW, f = 3.55 GHz.
Tune for Maximum Pout)
Adjacent Channel Power Ratio
(VDD = 6 Vdc, Pout = 450 mW Avg., IDQ = 180 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ARCHIVE INFORMATION
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
MRFG35003M6T1
2
RF Device Data
Freescale Semiconductor
VGS
VDD=6.0
C11
C10
C9
C8
C7
C6
C5
C16
C17
C18
C19
C20
C21
C22
R1
C3 C4
C14 C15
RF
INPUT
C2
Z1
ARCHIVE INFORMATION
Z10
Z2
Z3
C12
Z4
Z6
Z7
C13
Z8
Z9
Z11 Z12
Z13
C1
Z14
C24
C28
Z1, Z14
Z2
Z3
Z4
Z5, Z10
Z6
Z7
RF
OUTPUT
C23
C27
C26
0.044″ x 0.125″ Microstrip
0.440″ x 0.105″ Microstrip
0.340″ x 0.357″ Microstrip
0.380″ x 0.426″ Microstrip
0.527″ x 0.015″ Microstrip
0.027″ x 0.347″ Microstrip
0.538″ x 0.115″ Microstrip
Z8
Z9
Z11
Z12
Z13
PCB
C25
0.439″ x 0.136″ Microstrip
0.062″ x 0.280″ Microstrip
0.349″ x 0.302″ Microstrip
0.055″ x 0.130″ Microstrip
0.044″ x 0.502″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Designation
Description
C1
12 pF Chip Capacitor, ATC
C2
0.1 pF Chip Capacitor (0805), AVX
C3, C4, C14, C15
3.9 pF Chip Capacitors (0805), AVX
C5, C16
10 pF Chip Capacitors, ATC
C6, C17
100 pF Chip Capacitors, ATC
C7, C18
100 pF Chip Capacitors, ATC
C8, C19
1000 pF Chip Capacitors, ATC
C9, C20
3.9 μF Chip Capacitors, ATC
C10, C21
0.1 μF Chip Capacitors, ATC
C11, C22
22 μF, 35 V Tantalum Surface Mount Capacitor, Newark
C12, C13, C26, C27
0.3 pF Chip Capacitors (0805), AVX
C23, C25, C28
1.0 pF Chip Capacitors (0805), AVX
C24
7.5 pF Chip Capacitor, ATC
R1
50 W Chip Resistor, Newark
ARCHIVE INFORMATION
Z5
MRFG35003M6T1
RF Device Data
Freescale Semiconductor
3
C7
C18
+
C6
C10
C9
C8
C5
C17
R1
C3
C21
C22
C4
C14
C15
C13
C23
C2
C1
C20
C16
C12
ARCHIVE INFORMATION
C19
C24
C28
C27
C26
C25
MRFG35003M6
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
ARCHIVE INFORMATION
+
C11
MRFG35003M6T1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
IRL
−10
−20
−10
−20
VDS = 6 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_
−30
−30
−40
−40
ACPR
−50
−50
−60
0.1
1
Pout, OUTPUT POWER (WATTS)
40
11.5
35
G T , TRANSDUCER GAIN (dB)
12
11
30
10.5
25
GT
10
20
9.5
15
PAE
9
8.5
10
VDS = 6 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.898é−132.18_, ΓL = 0.883é−134.70_
5
8
PAE, POWER ADDED EFFICIENCY (%)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
0
0.1
1
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
ARCHIVE INFORMATION
−60
ARCHIVE INFORMATION
ACPR (dBc)
IRL, INPUT RETURN LOSS (dB)
0
MRFG35003M6T1
RF Device Data
Freescale Semiconductor
5
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.5
0.954
- 176.79
3.859
84.89
0.016
9.07
0.847
178.96
0.55
0.953
- 177.98
3.527
83.61
0.016
8.90
0.846
178.38
0.6
0.952
- 179.13
3.250
82.29
0.016
8.49
0.846
177.74
0.65
0.952
179.80
3.019
80.95
0.016
8.44
0.845
177.07
0.7
0.952
178.89
2.818
79.74
0.016
8.51
0.844
176.28
0.75
0.951
177.96
2.643
78.49
0.016
8.53
0.844
175.55
0.8
0.952
177.03
2.491
77.11
0.017
8.75
0.843
174.77
0.85
0.952
176.22
2.354
75.85
0.017
8.61
0.842
173.93
0.9
0.951
175.46
2.234
74.67
0.017
8.62
0.842
173.12
0.95
0.951
174.66
2.124
73.38
0.017
8.56
0.841
172.27
1
0.952
173.92
2.025
72.17
0.017
8.48
0.841
171.37
1.05
0.951
173.18
1.934
70.97
0.017
8.47
0.841
170.50
1.1
0.951
172.40
1.851
69.68
0.017
8.93
0.841
169.75
1.15
0.951
171.63
1.774
68.46
0.017
8.90
0.840
168.89
1.2
0.951
170.90
1.704
67.25
0.018
8.79
0.841
168.10
1.25
0.950
170.06
1.638
65.98
0.018
8.80
0.841
167.34
1.3
0.951
169.23
1.576
64.74
0.018
8.44
0.840
166.61
1.35
0.946
168.58
1.518
63.62
0.018
8.76
0.838
166.13
1.4
0.952
167.47
1.463
62.45
0.018
9.00
0.845
165.24
1.45
0.949
166.77
1.411
61.29
0.018
8.57
0.841
164.98
1.5
0.949
163.72
1.360
60.14
0.018
8.15
0.842
166.78
1.55
0.948
162.94
1.317
59.12
0.018
8.28
0.843
166.27
1.6
0.947
162.21
1.276
58.03
0.018
8.51
0.843
165.71
1.65
0.950
161.60
1.237
56.92
0.018
8.31
0.843
165.16
1.7
0.951
160.97
1.201
55.93
0.018
8.40
0.844
164.60
1.75
0.950
160.44
1.167
54.89
0.018
8.35
0.844
164.10
1.8
0.950
159.95
1.135
53.83
0.019
8.44
0.844
163.47
1.85
0.952
159.46
1.105
52.85
0.019
8.61
0.843
162.87
1.9
0.951
159.01
1.076
51.92
0.019
8.34
0.844
162.37
1.95
0.950
158.58
1.049
50.84
0.019
7.93
0.843
161.77
2
0.952
158.25
1.024
49.95
0.019
8.02
0.843
161.24
2.05
0.951
157.84
1.000
49.06
0.019
7.86
0.844
160.75
2.1
0.951
157.48
0.979
48.17
0.019
7.67
0.845
160.26
2.15
0.952
157.17
0.959
47.22
0.019
7.24
0.843
159.69
2.2
0.952
156.89
0.939
46.34
0.020
6.89
0.843
159.08
2.25
0.952
156.63
0.921
45.44
0.020
6.73
0.844
158.58
2.3
0.952
156.35
0.904
44.48
0.020
6.86
0.843
158.07
2.35
0.953
155.98
0.888
43.57
0.020
6.83
0.842
157.42
2.4
0.951
155.66
0.873
42.68
0.020
6.80
0.842
156.97
2.45
0.952
155.28
0.860
41.72
0.020
6.74
0.842
156.47
2.5
0.952
154.86
0.848
40.82
0.020
6.73
0.840
155.83
2.55
0.950
154.44
0.836
39.90
0.021
6.72
0.841
155.29
2.6
0.949
153.93
0.826
38.89
0.021
6.86
0.840
154.74
2.65
0.950
153.36
0.815
37.85
0.021
6.74
0.838
154.18
2.7
0.949
152.82
0.806
36.81
0.022
6.24
0.838
153.62
2.75
0.946
152.08
0.797
35.75
0.022
5.69
0.839
153.16
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA
MRFG35003M6T1
6
RF Device Data
Freescale Semiconductor
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.8
0.946
151.55
0.787
34.63
0.022
4.64
0.836
152.55
2.85
0.946
150.81
0.778
33.54
0.023
3.61
0.836
152.02
2.9
0.945
150.11
0.770
32.46
0.023
2.16
0.837
151.54
2.95
0.945
149.30
0.762
31.37
0.023
1.54
0.835
150.98
3
0.945
148.44
0.754
30.25
0.023
1.03
0.835
150.40
3.05
0.944
147.58
0.747
29.09
0.023
0.48
0.837
149.89
3.1
0.943
146.55
0.739
27.89
0.023
0.15
0.835
149.35
3.15
0.943
145.54
0.732
26.69
0.023
- 0.33
0.834
148.72
3.2
0.944
144.52
0.725
25.53
0.023
- 0.41
0.836
148.13
3.25
0.941
143.47
0.718
24.33
0.023
- 0.52
0.835
147.62
3.3
0.941
142.43
0.711
23.09
0.023
- 1.22
0.834
147.01
3.35
0.941
141.33
0.704
21.89
0.023
- 1.40
0.834
146.44
3.4
0.940
140.22
0.697
20.67
0.024
- 1.31
0.834
145.89
3.45
0.939
139.25
0.689
19.44
0.024
- 1.58
0.832
145.40
3.5
0.940
138.09
0.682
18.26
0.024
- 1.85
0.833
144.66
3.55
0.940
137.05
0.675
17.08
0.024
- 2.29
0.834
144.11
3.6
0.939
136.07
0.668
15.88
0.025
- 2.75
0.832
143.59
3.65
0.941
135.06
0.661
14.68
0.025
- 3.55
0.831
142.91
3.7
0.939
134.20
0.653
13.50
0.025
- 4.69
0.832
142.34
3.75
0.939
133.35
0.646
12.39
0.025
- 5.45
0.831
141.92
3.8
0.939
132.47
0.639
11.29
0.025
- 6.34
0.830
141.27
3.85
0.940
131.67
0.632
10.20
0.025
- 6.85
0.831
140.64
3.9
0.939
130.89
0.625
9.15
0.025
- 6.90
0.831
140.02
3.95
0.940
130.26
0.619
8.10
0.025
- 6.60
0.830
139.40
4
0.941
129.57
0.613
7.10
0.025
- 6.63
0.830
138.76
4.05
0.941
128.98
0.608
6.11
0.026
- 6.67
0.831
138.17
4.1
0.942
128.44
0.602
5.10
0.026
- 7.00
0.830
137.56
4.15
0.942
128.03
0.598
4.14
0.026
- 7.30
0.828
136.87
4.2
0.941
127.57
0.593
3.17
0.027
- 7.73
0.828
136.20
4.25
0.940
127.14
0.589
2.15
0.027
- 8.12
0.827
135.56
4.3
0.941
126.75
0.585
1.21
0.027
- 8.11
0.826
134.85
4.35
0.941
126.39
0.581
0.25
0.027
- 8.33
0.826
134.13
4.4
0.939
125.97
0.578
- 0.74
0.028
- 8.73
0.825
133.44
4.45
0.939
125.64
0.575
- 1.67
0.028
- 8.92
0.823
132.68
4.5
0.939
125.36
0.573
- 2.59
0.029
- 9.42
0.823
131.92
4.55
0.938
124.98
0.571
- 3.50
0.029
- 9.66
0.823
131.23
4.6
0.938
124.55
0.570
- 4.53
0.030
- 10.28
0.822
130.45
4.65
0.938
124.20
0.571
- 5.52
0.030
- 10.87
0.821
129.60
4.7
0.937
123.76
0.570
- 6.60
0.031
- 11.91
0.821
128.79
4.75
0.935
123.17
0.569
- 7.76
0.031
- 13.22
0.819
127.98
4.8
0.935
122.58
0.569
- 8.89
0.031
- 14.16
0.817
127.09
4.85
0.934
121.93
0.570
- 9.98
0.031
- 14.45
0.817
126.23
4.9
0.932
121.14
0.570
- 11.17
0.032
- 14.82
0.816
125.41
4.95
0.932
120.43
0.571
- 12.37
0.032
- 14.82
0.815
124.46
5
0.929
119.55
0.573
- 13.61
0.032
- 14.83
0.815
123.55
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 180 mA (continued)
MRFG35003M6T1
RF Device Data
Freescale Semiconductor
7
NOTES
MRFG35003M6T1
8
RF Device Data
Freescale Semiconductor
NOTES
MRFG35003M6T1
RF Device Data
Freescale Semiconductor
9
NOTES
MRFG35003M6T1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
0.35 (0.89) X 45_" 5 _
N
K
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉÉÉÉÉ
C
4
1
2
3
S
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
G
inches
10_DRAFT
Q
ZONE W
0.115
2.92
L
0.020
0.51
4
ZONE V
R
0.115
2.92
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
CASE 466 - 03
ISSUE D
PLD - 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRFG35003M6T1
RF Device Data
Freescale Semiconductor
11
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MRFG35003M6T1
Document Number: MRFG35003M6T1
Rev. 4, 1/2006
12
RF Device Data
Freescale Semiconductor