AGILENT MSA-0986

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0986
Features
Description
• Broadband, Minimum Ripple
Cascadable 50 Ω Gain Block
The MSA-0986 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for very
wide bandwidth industrial and
commercial applications that
require flat gain and low VSWR.
• 7.2 ± 0.5 dB Typical Gain
Flatness from 0.1 to 3.0 GHz
• 3 dB Bandwidth:
0.1 to 5.5 GHz
• 10.5 dBm Typical P1 dB at
2.0␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 12 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9552E
OUT
MSA
Vd = 7.8 V
6-438
86 Plastic Package
MSA-0986 Absolute Maximum Ratings
Absolute Maximum[1]
65 mA
500 mW
+13 dBm
150°C
–65 to +150°C
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2,4]:
θjc = 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 80°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 2.0 GHz
∆GP
Gain Flatness
f = 0.1 to 3.0 GHz
f3 dB
3 dB Bandwidth[2]
VSWR
Units
Min.
Typ.
dB
6.0
7.2
dB
± 0.5
GHz
5.5
Input VSWR
f = 1.0 to 3.0 GHz
1.6:1
Output VSWR
f = 1.0 to 3.0 GHz
1.8:1
NF
50 Ω Noise Figure
f = 2.0 GHz
dB
6.2
P1 dB
Output Power at 1 dB Gain Compression
f = 2.0 GHz
dBm
10.5
IP3
Third Order Intercept Point
f = 2.0 GHz
dBm
23.0
tD
Group Delay
f = 2.0 GHz
psec
95
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
6.2
7.8
Max.
9.4
–16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz gain (G P).
Part Number Ordering Information
Part Number
MSA-0986-TR1
MSA-0986-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-439
MSA-0986 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.02
0.05
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.36
.24
.22
.21
.21
.22
.22
.23
.24
.25
.26
.26
.26
.28
.31
.37
.44
.51
–105
–145
–164
–179
165
155
145
136
118
106
100
94
95
96
100
101
97
94
11.4
8.5
7.7
7.5
7.4
7.4
7.3
7.3
7.2
7.2
7.2
7.1
7.0
6.7
6.5
6.0
5.4
4.6
3.72
2.65
2.43
2.37
2.34
2.33
2.33
2.32
2.30
2.28
2.29
2.26
2.23
2.17
2.10
2.00
1.86
1.69
145
156
166
167
162
156
149
142
125
109
94
77
60
43
26
9
–7
–22
–14.1
–13.7
–13.5
–13.5
–13.4
–13.5
–13.4
–13.4
–13.3
–13.0
–13.0
–13.0
–12.8
–13.1
–13.6
–14.2
–14.9
–15.8
.198
.205
.211
.212
.214
.212
.213
.214
.217
.224
.224
.224
.229
.221
.210
.196
.181
.162
18
5
4
1
–1
–2
–2
–4
–6
–10
–12
–15
–21
–25
–31
–35
–38
–37
.38
.25
.22
.22
.22
.22
.23
.24
.26
.28
.33
.34
.36
.35
.32
.26
.19
.14
–102
–143
–158
–172
179
175
171
167
157
148
139
128
116
104
94
86
88
107
0.73
1.08
1.17
1.20
1.20
1.21
1.21
1.20
1.19
1.16
1.15
1.15
1.14
1.18
1.23
1.30
1.38
1.47
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
50
10
TC = +85°C
TC = +25°C
40 T = –25°C
C
12
11
P1 dB
10
8
30
Id (mA)
G p (dB)
8
6
GP
6
20
7
2
NF (dB)
4
10
I d = 25 mA
I d = 35-45 mA
0
0
.05
0.1
0.3 0.5
1.0
3.0
6.0
0
2
4
8
10
7.0
15
I d = 45 mA
NF (dB)
6.5
11
I d = 35 mA
6.0
9
I d = 45 mA
I d = 35 mA
I d = 25 mA
5.5
7
I d = 25 mA
5
0.1
5.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-440
NF
6
5
4
–25
0
+25
+55
+85
TEMPERATURE (°C)
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs.
Frequency.
P1 dB (dBm)
6
Vd (V)
FREQUENCY (GHz)
13
7
Gp (dB)
12
P1 dB (dBm)
(unless otherwise noted)
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 2.0 GHz, Id = 35 mA.
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
GROUND
RF INPUT
1
A09
RF OUTPUT
AND DC BIAS
45°
GROUND
1.52 ± 0.25
(0.060 ± 0.010)
4
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
2
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-441