AGILENT MSA-1105-STR

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1105
Features
Description
• High Dynamic Range
Cascadable 50␣ Ω or 75␣ Ω
Gain Block
The MSA-1105 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for high
dynamic range in either 50 or 75␣ Ω
systems by combining low noise
figure with high IP3. Typical
applications include narrow and
broadband linear amplifiers in
commercial and industrial systems.
• 3␣ dB Bandwidth:
50␣ MHz to 1.3␣ GHz
• 17.5 dBm Typical P1␣ dB at
0.5␣ GHz
• 3.6␣ dB Typical Noise Figure
at 0.5␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 8 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9557E
OUT
MSA
Vd = 5.5 V
6-458
05 Plastic Package
MSA-1105 Absolute Maximum Ratings
Absolute Maximum[1]
80 mA
550 mW
+13 dBm
150°C
–65 to 150°C
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2,4]:
θjc = 125°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8 mW/°C for TC > 124°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth[2]
Min.
Typ.
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
dB
dB
dB
10.0
12.7
12.0
10.5
f = 0.1 to 1.0 GHz
dB
1.3
f = 0.1 to 1.0 GHz
Output VSWR
f = 0.1 to 1.0 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
Max.
± 1.0
GHz
Input VSWR
VSWR
Units
1.5:1
1.7:1
dB
3.6
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
17.5
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
30.0
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
200
4.4
5.5
6.6
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (G P).
Part Number Ordering Information
Part Number
MSA-1105-TR1
MSA-1105-STR
No. of Devices
500
10
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-459
MSA-1105 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA)
S11
Freq.
GHz
.0005
.005
.025
.050
.100
.200
.300
.400
.500
.600
.700
.800
.900
1.000
1.500
2.000
2.500
3.000
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
.80
.26
.07
.06
.05
.06
.07
.09
.10
.11
.13
.15
.16
.18
.28
.38
.46
.53
–17
–62
–48
–38
–41
–58
–74
–91
–105
–116
–128
–136
–145
–152
174
150
133
118
19.0
13.9
12.8
12.7
12.7
12.6
12.4
12.2
12.0
11.8
11.5
11.2
10.9
10.5
8.8
7.1
5.6
4.2
8.94
4.98
4.36
4.33
4.31
4.26
4.19
4.10
4.00
3.88
3.76
3.63
3.49
3.37
2.75
2.28
1.90
1.62
171
163
174
174
170
162
154
146
138
131
123
116
109
102
72
48
28
11
–26.0
–16.8
–16.4
–16.3
–16.4
–16.2
–16.1
–15.8
–15.6
–15.4
–15.0
–14.7
–15.5
–14.1
–13.2
–12.1
–11.9
–11.6
.050
.144
.151
.153
.152
.155
.157
.163
.166
.171
.178
.184
.188
.197
.219
.248
.254
.262
51
15
4
2
3
5
7
8
8
10
11
11
11
11
7
0
–4
–8
.81
.26
.08
.06
.06
.08
.10
.12
.14
.17
.18
.21
.22
.24
.31
.34
.38
.40
–16
–64
–52
–48
–52
–73
–91
–105
–116
–126
–135
–144
–151
–159
170
151
134
122
0.53
0.93
1.08
1.08
1.09
1.08
1.07
1.06
1.05
1.04
1.03
1.01
1.01
1.00
1.00
0.99
1.02
1.04
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C, ZO = 50 Ω
TC = +85°C
TC = +25°C
14
ZO = 50 Ω
12
10
80 T = –25°C
C
Id (mA)
6
12
40
GP
NF (dB)
0
0
.02
.05
0.1
0.5 1.0
2.0 3.0
2
4
6
8
Vd (V)
5.5
22
5.0
I d = 60 mA
4.5
NF (dB)
I d = 70 mA
I d = 70 mA
I d = 60 mA
I d = 40 mA
4.0
16
3.5
I d = 40 mA
12
0.1
0.2 0.3
0.5
1.0
2.0
3.0
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-460
–25
+25
+85
TEMPERATURE (°C)
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
NF
4
3
0
FREQUENCY (GHz)
P1 dB (dBm)
11
5
20
2
14
P1 dB
16
13
4
18
17
60
ZO = 75 Ω
8
20
18
Gp (dB)
100
16
G p (dB)
P1 dB (dBm)
(unless otherwise noted)
Figure 3. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, Id = 60 mA.
05 Plastic Package Dimensions
GROUND
4
0.030
DIA
0.76
0.030
0.89
RF OUTPUT
AND DC BIAS
RF INPUT
A
3
1
0.030 ± 0.010
0.76 ± 0.25
(4 PLCS)
GROUND
0.135 ± 0.015
3.42 ± 0.25
(4 PLCS)
0.020
0.51
0.145
3.68
0.008 ± 0.002
0.20 ± 0.05
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
2
0.030
0.76
0.050
1.27
0.100 ± 0.010
2.54 ± 0.25
0.0005 ± 0.010
(0.013 ± 0.25)
6-461