SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current G A 1 H @VCE=30V, VEB=3V. D 2 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 K Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. P P Low Collector Output Capacitance J C : Cob=4pF(Max.) @VCB=5V. DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 0.3 + D _ 0.05 1.2 + E _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5 Complementary to 2N3906V. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Base Current IB 50 mA PC * 100 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range 2003. 12. 12 Revision No : 0 VSM Marking Type Name ZC 1/4 2N3904V ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V hFE(1) VCE=1V, IC=0.1mA 40 - - hFE(2) VCE=1V, IC=1mA 70 - - hFE(3) VCE=1V, IC=10mA 100 - 300 hFE(4) VCE=1V, IC=50mA 60 - - hFE(5) VCE=1V, IC=100mA 30 - - VCE(sat)1 IC=10mA, IB=1mA - - 0.2 VCE(sat)2 IC=50mA, IB=5mA - - 0.3 VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85 VBE(sat)2 IC=50mA, IB=5mA - - 0.95 300 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * fT Transition Frequency VCE=20V, IC=10mA, f=100MHz V V Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF Input Impedance hie 1.0 - 10 k Voltage Feedback Ratio hre 0.5 - 8.0 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 1.0 - 40 Noise Figure NF - - 5.0 - - 35 - - 35 VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=0.1mA Rg=1k , f=10Hz 15.7kHz dB Delay Time td Rise Time tr 10kΩ V in 300ns 10.9V 275Ω Vout C Total< 4pF VCC =3.0V 0 t r ,t f < 1ns, Du=2% -0.5V Switching Time nS Storage Time tstg 10kΩ V in 1N916 or equiv. Fall Time tf 20µs 10.9V -9.1V 275Ω Vout C Total< 4pF VCC =3.0V - - 200 - - 50 0 t r ,t f < 1ns, Du=2% * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2003. 12. 12 Revision No : 0 2/4 2N3904V I C - V CE 1k 0.9 0.8 1 COMMON EMITTER COLLECTOR CURRENT I C (mA) h FE - I C Ta=25 C DC CURRENT GAIN h FE 100 0.7 0.6 0.5 80 0.4 60 0.3 40 COMMON EMITTER VCE =1V 500 Ta=125 C 300 Ta=25 C Ta=-55 C 100 50 30 0.2 10 0.1 I B =0.1mA 20 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) V CE(sat) - I C 1 COMMON EMITTER I C /I B =10 0.5 0.3 Ta=125 C 0.1 0.05 Ta=25 C Ta=-55 C 0.03 0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) I C - V BE 200 VCE =1V 160 V BE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 10 120 80 Ta= 125 C Ta=25 C Ta=-55 C COLLECTOR CURRENT I C (mA) COMMON EMITTER 40 0 3 Ta=-55 C 1 0.5 Ta=25 C 0.3 Ta=125 C 0.1 0 0.4 0.8 1.2 BASE-EMITTER VOLTAGE V BE 2003. 12. 12 COMMON EMITTER I C /I E =10 5 Revision No : 0 1.6 (V) 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 3/4 VCE - I B Cob - VCB , C ib - V EB 1.0 COMMON EMITTER Ta=25 C 0 0.001 10 C ib 5 3 C ob 1 0.5 0.01 0.1 1 BASE CURRENT I B (mA) 2003. 12. 12 CAPACITANCE C ob (pF) C ib (pF) 0.4 0.2 f=1MHz Ta=25 C 30 I C =100mA 0.6 I C =30mA 0.8 I C =10mA 50 I C =1mA COLLECTOR-EMITTER VOLTAGE VCE (V) 2N3904V Revision No : 0 10 0.1 0.3 1 3 10 30 REVERSE VOLTAGE V CB (V) V EB (V) 4/4