Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N4403 TRANSISTOR (PNP) TO—92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : -0.6 Collector-base voltage V V(BR)CBO : -40 1.EMILTTER 2.BASE 3. COLLECTOR 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO Ic=-100µA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-35 V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-35 V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-2 V, IC=- 150mA Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -150 mA, IB=-15mA -0.95 V Parameter 100 MAX UNIT 300 VCE= -10V, IC= -20mA Transition frequency fT 200 f = 100MHz MHz