DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz • Gate Length : Lg = 0.2 µm • Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER QUALITY GRADE NE32500 Standard (Grade D) NE27200 Special, specific (Grade C and B) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDS 4.0 Gate to Source Voltage VGS –3.0 V ID IDSS mA Drain Current V Total Power Dissipation Ptot* 200 mW Channel Temperature Tch 175 °C Storage Temperature Tstg –65 to +175 °C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t) ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Gate to Source Leak Current IGSO – 0.5 10 µA VGS = –3 V Saturated Drain Current IDSS 20 60 90 mA VDS = 2 V, VGS = 0 V VGS(off) –0.2 –0.7 –2.0 V VDS = 2 V, ID = 100 µA gm 45 60 – mS VDS = 2 V, ID = 10 mA Thermal Resistance Rth* – – 260 ˚C/W Noise Figure NF – 0.45 0.55 dB Associated Gain Ga 11.0 12.5 – dB Gate to Source Cutoff Voltage Transconductance TEST CONDITIONS channel to case VDS = 2 V, ID = 10 mA, f = 12 GHz RF performance is determined by packaging and testing 10 chips per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples. Document No. P11512EJ2V0DS00 (2nd edition) Date Published January 1997 N Printed in Japan © 1996 NE32500, NE27200 CHIP DIMENSIONS (Unit: µm) 5.5 36.5 66 13 25 Source Source 60 76.5 89 Drain 100.5 350 68 38 13 25 58 46.5 25 21 Gate 25 66 49.5 43 13 350 Thickness = 140 µm : BONDING AREA TYPICAL CHARACTERISTICS (TA = 25 ˚C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 100 200 80 ID – Drain Current – mA Ptot – Total Power Dissipation – mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 100 50 VGS = 0 V 60 –0.2 V 40 –0.4 V 20 –0.6 V –0.8 V 0 50 100 150 200 TA – Ambient Temperature – ˚C 2 250 0 1.5 VDS – Drain to Source Voltage – V 3.0 NE32500, NE27200 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 2 V ID – Drain Current – mA 60 40 20 0 –2.0 –1.0 0 VGS – Gate to Source Voltage – V Gain Calculations 1 + | ∆ |2 − | S11 |2 − | S 22 |2 2 | S12 || S 21 | MSG. = | S 21 | | S12 | K= MAG. = | S 21 | (K ± K 2 − 1) | S12 | ∆ = S11 ⋅ S 22 − S 21 ⋅ S12 NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 24 VDS = 2 V f = 12 GHz VDS = 2 V ID = 10 mA 14 Ga 1.0 12 0.5 8 NF – Noise Figure – dB 16 Ga – Associated Gain – dB NF – Noise Figure – dB Ga 12 2.0 11 1.5 10 1.0 Ga – Associated Gain – dB 13 20 0.5 NF NF 0 1 2 4 6 4 8 10 14 20 30 f – Frequency – GHz 0 10 20 30 ID – Drain Current – mA 3 NE32500, NE27200 S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY S11 MAG. (MHz) 4 S21 ANG. MAG. (deg.) 500 0.999 1000 2000 S12 ANG. MAG. (deg.) S22 ANG. MAG. (deg.) ANG. (deg.) –4 4.34 177 0.006 82 0.564 –3 0.998 –7 4.33 174 0.012 84 0.562 –6 0.996 –14 4.28 168 0.025 81 0.559 –11 3000 0.992 –20 4.26 163 0.037 76 0.557 –17 4000 0.976 –28 4.24 158 0.048 71 0.551 –23 5000 0.962 –36 4.11 152 0.060 66 0.546 –29 6000 0.962 –42 4.06 148 0.070 62 0.539 –34 7000 0.943 –48 3.95 143 0.079 58 0.533 –40 8000 0.928 –55 3.83 139 0.087 55 0.526 –44 9000 0.920 –60 3.73 134 0.095 51 0.519 –49 10000 0.900 –67 3.58 129 0.104 47 0.508 –54 11000 0.881 –72 3.46 126 0.109 43 0.503 –58 12000 0.869 –77 3.34 122 0.114 40 0.494 –62 13000 0.856 –82 3.23 118 0.120 37 0.488 –66 14000 0.839 –86 3.11 115 0.123 34 0.483 –69 15000 0.831 –91 3.01 112 0.127 32 0.476 –72 16000 0.818 –96 2.88 108 0.131 29 0.472 –76 17000 0.804 –99 2.78 105 0.134 27 0.468 –79 18000 0.796 –103 2.68 103 0.137 24 0.464 –81 19000 0.784 –106 2.59 100 0.141 22 0.460 –84 20000 0.782 –111 2.49 96 0.142 20 0.456 –88 21000 0.772 –114 2.42 95 0.144 19 0.457 –90 22000 0.761 –117 2.33 93 0.147 17 0.450 –92 23000 0.758 –119 2.25 90 0.147 15 0.454 –94 24000 0.753 –122 2.20 88 0.148 14 0.453 –95 25000 0.748 –125 2.11 86 0.150 12 0.453 –98 26000 0.746 –127 2.06 84 0.152 11 0.460 –100 27000 0.750 –129 2.01 82 0.154 9 0.453 –101 28000 0.738 –133 1.93 79 0.151 7 0.453 –104 29000 0.744 –135 1.90 77 0.153 7 0.453 –105 30000 0.742 –138 1.84 75 0.156 4 0.454 –107 NE32500, NE27200 CHIP HANDLING DIE ATTACHMENT Die attach operation can be accomplished with Au-Sn (within a 300 ˚C – 10 s) performs in a forming gas environment. Epoxy die attach is not recommend. BONDING Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be kept to minimum. As a general rule, the bonding operation should be kept within a 280 ˚C, 2 minutes for all bonding wires. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. 5 NE32500, NE27200 [MEMO] 6 NE32500, NE27200 [MEMO] 7 NE32500, NE27200 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5