2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier • Complementary pair of 2SC4704 Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –200 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V Collector current IC –0.2 A Collector peak current IC(peak) –0.5 A Collector power dissipation PC 1.25 W PC* 1 10 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –200 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –200 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –10 µA VCB = –160 V, IE = 0 60 — 200 1 DC current transfer ratio hFE* Base to emitter voltage VBE — — –1.0 V VCE = –5 V, IC = –30 mA Collector to emitter saturation voltage VCE(sat) — — –1.0 V IC = –30 mA, IB = –3 mA Gain bandwidth product fT 200 300 — MHz VCE = –20 V, IC = –30 mA Collector output capacitance Cob — 5.0 — pF VCB = –30 V, IE = 0, f = 1 MHz Note: 1. The 2SA1810 is grouped by hFE as follows. B C 60 to 120 100 to 200 2 VCE = –5 V, IC = –10 mA 2SA1810 Maximum Collector Dissipation Curve Area of Safe Operation –1.0 1 Shot pulse Ta = 25°C Collector Current IC (A) –0.5 8 4 –0.2 ms 10 n = tio PW e ra Op 5°C) DC = 2 (T C Collector power dissipation Pc (W) 12 –0.1 –0.05 –0.02 0 50 100 Case Temperature TC (°C) 150 –0.01 –10 –20 –50 –100 –200 –500 –1000 Collector to emitter Voltage VCE (V) Typical Output Characteristics 1,000 –0.4 –80 –0.2 mA –40 IB = 0 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) 100 50 20 10 –1 Collector to Emitter Saturation Voltage vs. Collector Current –2 –1.0 –0.5 TC = 75°C –0.2 25°C –50 –20 –25°C –2 –5 –10 –20 –50 –100–200 Collector current IC (mA) –5 –10 –20 –50 –100–200 Collector current IC (mA) –10 –5 –2 –0.1 –0.05 –1 Collector current IC (mA) Collector to emitter saturation voltage VCE (sat) (V) lC = 10 lB Pulse –2 Typical Transfer Characteristics –200 VCE = –5 V –100 Pulse –10 –5 TC = 75°C 25°C –25°C 200 TC = 75°C –120 VCE = –5 V Pulse 500 25°C –25°C 0 –2. .6 8 –1 –11. .4 –1.2.8 – .0 –0 –1 –0.6 DC current transfer ratio hFE W Collector Current IC (mA) .25 TC = 25°C =1 –160 DC Current Transfer Ratio vs. Collector Current Pc –200 –1 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 Base to emitter voltage VBE (V) 3 2SA1810 Gain bandwidth product fT (MHz) 4 1,000 VCE = –20 V Pulse 500 200 100 50 20 10 –1 –2 –5 –10 –20 –50 –100–200 Collector current IC (mA) Collector output capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product vs. Collector Current 100 IE = 0 f = 1 MHz 50 20 10 5 2 1 –1 –2 –5 –10 –20 –50 –100 Collector to base voltage VCB (V) 2SA1810 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 2SA1810 Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 6 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. 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