NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Pulsed Drain Current (TC = +25°C), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Continuous Drain Current, ID TC = +30°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 800 – – V VGS = 0, VDS = 800V, TJ = +25°C – 20 250 µA VGS = 0, VDS = 800V, TJ = +125°C – 0.1 1.0 mA IGSS VDS = 0, VGS = ±20V – 10 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1mA 2.1 3.0 4.0 V Static Drain–Source On Resistance RDS(on) VGS = 10V, ID = 3A – 1.3 1.5 Ω Forward Transconductance gfs VDS = 25V, ID = 3A 1.8 3.0 – mho Input Capactiance Ciss VDS = 25V, VGS = 0, f = 1MHz – 3900 5000 pf Output Capacitance Coss – 200 350 pf Reverse Transfer Capactiance Crss – 80 140 pf Turn–On Time td(on) – 60 90 ns – 90 140 ns td(off) – 330 430 ns tf – 110 140 ns Static Characteristics Drain–Source Breakdown Voltage V(BR)DSS Zero–Gate Voltage Drain Current IDSS Gate–Body Leakage Current ID = 250µA, VGS = 0 Dynamic Characteristics Rise Time Turn–Off Delay Time Fall Time tr VDD = 30V, ID = 2.6A, VGS = 10V, RGS = 50Ω, Ω Rgen = 50Ω Ω Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Internal Drain Inductance LD Measured from contact screw on header closer to source pin and center of die – 5.0 – nH Internal Source Inductance LS Measured from the source lead 6mm from package to source bonding pad – 12.5 – nH Dynamic Characteristics (Cont’d) Source–Drain Diode Ratings and Characteristics Continuous Reverse Drain Current IDR TC = +25°C – – 6 A Pulsed Reverse Drain Current IDRM TC = +25°C – – 24 A Diode Forward Voltage VSD IF = 12A, VGS = 0, TJ = +25°C – 1.1 1.5 V Reverse Recovery Time trr IF = 6A, TJ = +25°C – 1800 – ns Reverse Recovered Charge Qrr VGS = 0, VR = 100V, TJ = +25°C, diF/dt = 100A/µs, – 25 – µC .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Source .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Drain/Case