NTLJS1102P Power MOSFET −8 V, −8.1 A, mCOOL] Single P−Channel, 2x2 mm, WDFN package Features • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • • Conduction Lowest RDS(on) in 2 x 2 mm Package 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive 2 x 2 mm Footprint Same as SC−88 Package Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Halide−Free Device This is a Pb−Free Device http://onsemi.com RDS(on) MAX ID MAX 36 mW @ −4.5 V −6.2 A 45 mW @ −2.5 V −5.5 A 68 mW @ −1.8 V −3.0 A 90 mW @ −1.5 V −1.0 A 300 mW @ −1.2 V −0.2 A V(BR)DSS −8.0 V Applications • High Side Load Switch • Li Ion Battery Linear Mode Charging • Optimized for Battery and Load Management Applications in S G Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −8 V Gate−to−Source Voltage VGS ±6 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C tv5s TA = 25°C −8.1 Steady State TA = 25°C 1.9 TA = 85°C −6.2 ID A MARKING DIAGRAM D 1 2 J6MG G 3 W 6 5 4 Pin 1 3.3 TA = 25°C TA = 85°C ID −3.7 A −2.7 TA = 25°C PD 0.7 W tp = 10 ms IDM −30 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −5.5 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current S WDFN6 CASE 506AP PD tv5s Steady State −4.5 D P−CHANNEL MOSFET Operating Junction and Storage Temperature 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces). J6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS D 1 D 2 G 3 D S 6 D 5 D 4 S (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 0 1 Publication Order Number: NTLJS1102P/D NTLJS1102P THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 65 Junction−to−Ambient – t v 5 s (Note 3) RqJA 38 Junction−to−Ambient – Steady State min Pad (Note 4) RqJA 180 Unit °C/W 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm2 [2 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −8.0 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = −8V V −7.2 mV/°C TJ = 25°C −1.0 TJ = 85°C −10 IGSS VDS = 0 V, VGS = ±6V VGS(TH) VGS = VDS, ID = −250 mA mA ±0.1 mA −0.72 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance −0.29 2.7 gFS mV/°C VGS = −4.5 V, ID = −6.2 A 25 36 mW VGS = −4.5 V, ID = −3.0 A 25 36 VGS = −2.5 V, ID = −5.5 A 34 45 VGS = −2.5 V, ID = −3.0 A 34 45 VGS = −1.8 V, ID = −3.0 A 45 68 VGS = −1.5 V, ID = −1.0 A 55 90 VGS = −1.2 V, ID = −0.2 A 80 300 VDS = −4 V, ID = −6.2 A 14.3 S VGS = 0 V, f = 1 MHz, VDS = −4 V 1585 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 350 CRSS 185 Total Gate Charge QG(TOT) 15.7 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = −4.5 V, VDS = − 4 V; ID = −6.2 A 25 nC 0.8 1.9 3.3 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tD(ON) 8.0 tr 41 td(OFF) VGS = −4.5 V, VDS = −4 V, ID = −6.2 A, RG = 1 W tf 80 70 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 ns NTLJS1102P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn−On Delay Time Rise Time tD(ON) tr Turn−Off Delay Time Fall Time td(OFF) ns 8.0 VGS = −4.5 V, VDS = −4 V, ID = −8.1 A, RG = 1 W tf 19 78 50 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C −0.6 TJ = 85°C −0.58 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = −1.0 A 55 VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A QRR −1.0 V 85 ns 18 37 39 nC 5. Pulse Test: pulse width v 300 ms, duty cycle v 2% 6. Switching characteristics are independent of operating junction temperatures ORDERING INFORMATION Package Shipping† NTLJS1102PTBG WDFN6 (Pb−Free) 3000 / Tape & Reel NTLJS1102PTAG WDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTLJS1102P TYPICAL CHARACTERISTICS 30 −2.5 V VDS = −5 V −ID, DRAIN CURRENT (A) 25 −2.0 V 20 −1.8 V 15 10 −1.5 V 5 VGS = −1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −4.5 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 5 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 2.25 2.5 Figure 2. Transfer Characteristics 0.14 0.12 0.10 ID = −6.2 A 0.08 ID = −0.2 A 0.04 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 −VGS, GATE VOLTAGE (V) 0.20 −1.2 V 0.18 −1.5 V −1.8 V TJ = 25°C 0.16 0.14 0.12 0.10 0.08 0.06 −2.5 V 0.04 0.02 0 VGS = −4.5 V 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.5 100,000 VGS = −4.5 V ID = −6.2 A TJ = 150°C 1.3 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) TJ = −55°C Figure 1. On−Region Characteristics 0.16 1.4 TJ = 25°C −VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 0 15 TJ = 125°C 0.20 0.02 0 20 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.18 0.06 25 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 30 1.2 1.1 1.0 0.9 10,000 TJ = 125°C 1,000 TJ = 85°C 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 1 2 3 4 5 6 7 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 8 NTLJS1102P VGS = 0 V TJ = 25°C f = 1 MHz Ciss 1800 1600 1400 1200 Coss 1000 800 600 400 Crss 200 0 0 1 2 3 4 5 6 7 8 5 4 −VDS 2 QGS 2 QGD VDS = −4 V ID = −6.2 A TJ = 25°C 1 0 0 2 4 6 8 10 12 1 0 16 14 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 td(off) −IS, SOURCE CURRENT (A) t, TIME (ns) 3 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = −4.5 V VDD = −4 V ID = −6.2 A tf tr 100 10 td(on) 1 10 1 TJ = 125°C 100 TJ = 25°C TJ = 150°C 0.1 TJ = −55°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 50 0.8 0.7 ID = −250 mA 40 0.6 0.5 POWER (W) −VGS(th) (V) 4 −VGS 3 1000 1 5 QT −VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 2400 2200 2000 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 0.4 0.3 0.2 30 20 10 0.1 0 −50 −25 0 25 50 75 100 125 0 150 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 TJ, TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 5 NTLJS1102P TYPICAL CHARACTERISTICS −ID, DRAIN CURRENT (A) 100 VGS = −6 V Single Pulse TC = 25°C 100 ms 10 1 ms 1 0.1 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 100 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Figure 13. Maximum Rated Forward Biased Safe Operating Area 1 Duty Cycle = 0.5 0.2 RqJA = 65°C/W 0.1 0.1 0.01 0.05 Single Pulse 1E−04 1E−03 1E−02 1E−01 1E+00 t, TIME (s) Figure 14. FET Thermal Response http://onsemi.com 6 1E+01 1E+02 1E+03 NTLJS1102P PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. A B PIN ONE REFERENCE 0.10 C 2X 2X ÍÍÍ ÍÍÍ ÍÍÍ E DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 0.10 C A3 0.10 C A 7X 0.08 C A1 C D2 6X L SOLDERING FOOTPRINT* SEATING PLANE 4X 1 2.30 e L2 3 b1 B 1 b J J1 0.60 1.25 NOTE 5 4 6X 0.35 0.43 0.05 C 6 1.10 6X 6X 0.10 C A E2 K MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF 0.35 6X 0.10 C A 0.05 C B 0.34 NOTE 3 BOTTOM VIEW 0.65 PITCH 0.66 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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