Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. 5.5 1.5 5.1 6.5 2.3 0.65 0.8Min. C0.5 1.5 0.5 1.0 0.5 2.3 0.9 2.3 (3) (2) (1) 0.9 0.75 2SB1275 2.5 9.5 Absolute maximum ratings (Ta = 25C) V V Emitter-base voltage VEBO −5 −1.5 −3 V A(DC) IC Collector current Collector power dissipation A(Pulse) 1 2SB1275 6.8 2.5 W(Tc=25°C) 10 PC 2SB1236A 2SB1236A ∗1 W 1 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.65Max. ∗2 0.5 4.4 Unit −160 −160 14.5 Limits VCBO VCEO 1.0 Parameter 0.9 Symbol Collector-base voltage Collector-emitter voltage (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : CPT3 EIAJ : SC-63 (1) (2) (3) 2.54 2.54 ∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. 1.05 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Packaging specifications and hFE Type 2SB1275 2SB1236A Package hFE CPT3 P TL 2500 ATV D TV2 2500 Code Basic ordering unit (pieces) Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −160 − − V IC = −50μA Collector-emitter breakdown voltage BVCEO −160 − − V IC = −1mA Emitter-base breakdown voltage BVEBO −5 − − V IE = −50μA Collector cutoff current ICBO − − −1 μA VCB = −120V Emitter cutoff current IEBO − − −1 μA VEB = −4V VCE(sat) − − −2 V 82 − 180 − 100 − 200 − fT − 50 − MHz Cob − 30 − pF Collector-emitter saturation voltage DC current transfer ratio 2SB1275 2SB1236A Transition frequency Output capacitance ∗Measured using pulse current. hFE www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 Conditions IC/IB = −1A/−0.1A ∗ VCE = −5V , IC = −0.1A VCE = −5V , IE = 0.1A , f = 30MHz VCB = −10V , IE =0A , f = 1MHz 2009.12 - Rev.B 2SB1275 / 2SB1236A Data Sheet Electrical characteristics curves −10 Ta=25°C −4mA −3mA −2mA −1mA IB= 0mA 0 −1 0 −2 −3 −4 −0.2 −0.1 −0.05 −0.02 −0.01 −5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE= −10V DC CURRENT GAIN : hFE 25°C 100 −25°C 50 20 10 5 2 1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −10 −2 −1 −0.5 IC/IB=50 −0.2 −0.1 −0.05 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 10 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Fig.5 Collector-emitter saturation voltage vs. collector current ) VCE= −5V Ta=25°C 500 20 −0.02 −0.01 −0.01 −0.02 500 1000 EMITTER CURRENT : IE (mA) Fig.7 Resistance raito vs. emmiter current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1000 f=1MHz IE=0A Ta=25°C 500 200 100 50 20 10 5 2 1 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage 2/3 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 Fig.3 DC current gain vs. collector current ( ) −10 IC/IB=10 −5 −2 −1 Ta= −25°C −0.5 −0.2 −0.1 −0.05 25°C VBE(sat) 100°C Ta=100°C VCE(sat) 25°C −25°C −0.02 −0.01 −0.01 −0.02 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE: Cob (pF) TRANSITION FREQUENCY : fT (MHz) 1000 5 COLLECTOR CURRENT : IC (A) Ta=25°C −5 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( −5V 10 1 −0.01 −0.02 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 Fig.2 Ground emitter propagation characteristics 500 Ta=100°C 20 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics 200 50 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 VCE= −10V 100 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) −0.2 −0.5 200 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage −10 −5 COLLECTOR CURRENT : IC (A) −0.4 DC CURRENT GAIN : hFE −6mA −5mA −1 −25°C −0.6 −2 25°C PC=1W −10mA −9mA −8mA −7mA Ta=25°C 500 Ta=100 °C −0.8 1000 VCE= −5V −5 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) −1.0 Ic Max. (Pulse∗) Pw=10ms∗ −2 −1 −0.5 100ms∗ −0.2 DC −0.1 −0.05 −0.02 −0.01 −0.005 Ta=25°C ∗ Single NONREPETITIVE −0.002 PULSE −0.001 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SB1236A) 2009.12 - Rev.B 2SB1275 / 2SB1236A COLLECTOR CURRENT : IC (A) −10 −5 Data Sheet Ic Max. (Pulse∗) Pw=10ms∗ −2 −1 −0.5 −0.2 100ms∗ DC −0.1 −0.05 −0.02 −0.01 −0.005 Ta=25°C ∗ Single NONREPETITIVE −0.002 PULSE −0.001 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SB1275) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/3 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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