Power Transistors 2SB0949 (2SB949), 2SB0949A (2SB949A) Silicon PNP epitaxial planar type darlington Unit: mm ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) Symbol 2SB0949 Rating Unit −60 V VCBO 2SB0949A 4.2±0.2 7.5±0.2 16.7±0.3 φ 3.1±0.1 −60 VEBO −5 V IC −2 A V ICP −4 A PC 35 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C −80 Peak collector current TC = 25°C dissipation 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 Internal Connection 2 C B E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB0949 Conditions IC = −30 mA, IB = 0 VCEO Collector-base cutoff current (Emitter open) 2SB0949 Collector-emitter cutoff current (Base open) 2SB0949 Collector-emitter saturation voltage Max −60 Unit V VBE VCE = −4 V, IC = −2 A −2.8 V VCB = −60 V, IE = 0 −1 mA VCB = −80 V, IE = 0 −1 VCE = −30 V, IB = 0 −2 ICEO VCE = −40 V, IB = 0 −2 IEBO VEB = −5 V, IC = 0 −2 2SB0949A Forward current transfer ratio Typ ICBO 2SB0949A Emitter-base cutoff current (Collector open) Min −80 2SB0949A Base-emitter voltage 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 Emitter-base voltage (Collector open) 1.3±0.2 1.4±0.1 5.08±0.5 VCEO Collector current 2.7±0.2 −80 Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Collector power 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip (4.0) ■ Features Parameter 10.0±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A hFE1 VCE = −4 V, IC = −1 A 1 000 hFE2 * VCE = −4 V, IC = −2 A 1 000 VCE(sat) IC = −2 A, IB = −8 mA mA mA 10 000 −2.5 V fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 Turn-on time ton IC = −2 A, IB1 = −8 mA, IB2 = 8 mA 0.4 µs Storage time tstg VCC = −50 V 1.5 µs Fall time tf 0.5 µs Transition frequency MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R hFE2 1 000 to 2 500 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00028BED 1 2SB0949, 2SB0949A PC Ta IC VCE 40 30 (1) 20 10 TC=25˚C −3 −2 4.0mA −1 –0.2mA 80 120 0 160 Ambient temperature Ta (°C) −1 0 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) TC=100˚C –25˚C 25˚C − 0.1 −1 −3 −4 TC=100˚C 25˚C –25˚C 103 102 10 − 0.01 −10 − 0.1 −1 −10 t=1ms t=10ms DC 2SB0949A 2SB0949 − 0.1 −1 000 103 102 10 1 − 0.1 −1 −10 −100 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1) (2) 10 1 10−1 10−3 10−2 Collector-emitter voltage VCE (V) 2 IE=0 f=1MHz TC=25˚C 102 10−2 10−4 10−1 1 Time t (s) SJD00028BED −3.2 Collector-base voltage VCB (V) 103 Thermal resistance Rth (°C/W) Collector current IC (A) ICP −100 −2.4 Rth t −10 −10 −1.6 104 Collector current IC (A) Non repetitive pulse TC=25˚C IC − 0.8 0 Cob VCB Safe operation area − 0.01 −1 –25˚C Base-emitter voltage VBE (V) VCE=–4V 104 Collector current IC (A) −100 0 −5 hFE IC −10 − 0.1 −2 105 IC/IB=250 −1 −4 Collector-emitter voltage VCE (V) VCE(sat) IC −100 − 0.01 − 0.01 25˚C TC=100˚C –0.1mA 40 −1 −6 −2 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 −8 –0.6mA (4) 0 VCE=–4V IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA –0.8mA −4 (2) (3) −10 Collector current IC (A) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) IC VBE −5 50 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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