Reflective Photosensors (Photo Reflectors) CNB1301 (ON2171) Reflective photosensor Non-contact point SW, object sensing Unit : mm CNB1301 is a reflective photosensor consisting of a small, thin reflective photosensor (CNB1302) to which a plastic lens is attached to increase the focal distance from 0.8 mm to 2.5 mm. 1.05 SEC. A-A' 4.5±0.2 4.0±0.2 • Small size, light weight: 5 mm × 4.5 mm (height: 4.0 mm) • Focal distance: 2.5 mm • Visible light cutoff resin is used A' 3.0 min (0.5) (0.5) • Printers • Cassette deck Parameter Reverse voltage 2 emitting diode) Forward current Rating Unit VR 3 V IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Collector current IC 20 mA Collector power dissipation *2 PC 50 mW Operating ambient temperature T opr −25 to +75 °C Storage temperature Tstg −30 to +80 °C Power dissipation *1 Temperature (4.0) 4 3 1 (3.5) Symbol 2-0.15 (1.8) ■ Absolute Maximum Ratings Ta = 25°C Input (Light A 2-0.5 ■ Applications • Copier • Facsimiles Device center (2.8) ■ Features 4.0±0.2 5.0±0.2 ■ Overview (0.4) (C0.5) 1: Anode 2: Cathode 3: Emitter 4: Collector PRSMR104RL-001 Package Note) *1: Input power derating ratio is 1.36 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 0.91 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max 1.3 Unit Forward voltage VF IF = 50 mA 1.5 V characteristics Reverse current IR VR = 3 V 10 µA VCE = 10 V 200 nA 5.2 mA 40 µA Input Output Collector-emitter cutoff current characteristics (Base open) Transfer Collector current * characteristics Dark current ICEO IC VCC = 5 V, IF = 10 mA, RL = 100 Ω, d = 4 mm ID VCC = 5 V, IF = 10 mA, RL = 100 Ω Collector-emitter saturation voltage VCE(sat) IF = 20 mA, IC = 0.1 mA Rise time tr VCC = 5 V, IC = 0.1 mA, RL = 100 Ω Fall time tf Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation IF 3. *: Output current measurement circuit 0.8 0.5 V 20 µs 20 µs VCC IC 4 mm glass plate RL Evaporated Al Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00046BED 1 PC , PD Ta 80 IF V F 60 PD 1.6 Ta = 25°C 40 20 IF = 50 mA Forward voltage VF (V) PC 40 30 20 1.2 10 mA 1 mA 0.8 0.4 10 20 60 0 100 0 0.4 0.8 1.6 2.0 0 −40 2.4 Forward voltage VF (V) Ambient temperature Ta (°C) IC I F 0 8 4 ∆IC Ta d = 4 mm Ta = 25°C 12 20 mA 8 15 mA 10 mA 4 80 160 IF = 30 mA Collector current IC (mA) 12 40 Ambient temperature Ta (°C) IC VCE 16 VCC = 5 V Ta = 25˚C RL = 100 Ω d = 4 mm 16 1.2 Relative collector current ∆IC (%) 0 −20 20 Collector current IC (mA) VF Ta 50 60 Forward current IF (mA) Collector power dissipation PC , power dissipation PD (mW) CNB1301 VCC = 5 V IF = 10 mA RL = 100 Ω 120 80 40 4 mA 0 8 16 24 32 0 40 Forward current IF (mA) 0 2 Rise time tr , fall time tf (µs) Collector-emitter cutoff current (Base open) ICEO (µA) 10 −1 10 −2 10 −3 40 80 Ambient temperature Ta (°C) 2 10 0 −40 12 0 103 102 RL = 2 kΩ 1 kΩ 10 200 Ω 10 −1 1 Collector current IC (mA) SHG00046BED 80 ∆IC d 100 VCC = 5 V Ta = 25°C : tr : tf 1 10 −2 40 Ambient temperature Ta (°C) 104 VCE = 10 V 0 8 tr , tf IC 1 10 −4 −40 6 Collector-emitter voltage VCE (V) ICEO Ta 10 4 Relative collector current ∆IC (%) 0 10 VCC = 5 V IF = 10 mA 80 d 60 40 20 0 0 2 4 6 Distance d (mm) 8 10 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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